Patents by Inventor Han-Pin Chung
Han-Pin Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240110030Abstract: A styrene-modified polyethylene-based expandable resin particle is provided, which comprise a polyethylene resin and a polystyrene resin, wherein a content of the polyethylene resin ranges from 5 wt % to 30 wt % and a content of the polystyrene resin ranges from 70 wt % to 95 wt % based on 100 wt % of the polyethylene resin and the polystyrene resin, wherein the expandable resin particle comprises a xylene insoluble matter and an acetone insoluble matter, and a ratio of a content of the xylene insoluble matter to a content of the acetone insoluble matter ranges from 0.01 to 5. In addition, an expanded resin particle and a foamed resin molded article prepared by the aforesaid expandable resin particle are also provided. Furthermore, a method for manufacturing the aforesaid expandable resin particle is also provided.Type: ApplicationFiled: September 28, 2023Publication date: April 4, 2024Inventors: Han-Liou YI, Yao-Hsien CHUNG, Cheng-Ting HSIEH, Yu-Pin LIN, Keng-Wei HSU
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Publication number: 20240047276Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure and a second protruding structure over a substrate, and forming a first insulation material layer on the first protruding structure and the second protruding structure. The method includes performing a pre-treatment process on the first insulation material layer to form a first treated insulation material layer, and forming a second insulation material layer on the first treated insulation material layer. The method includes performing a first insulation material conversion process on the first treated insulation material layer and the second insulation material layer. The first protruding structure and the second protruding structure are bent toward opposite directions during the first insulation material conversion process.Type: ApplicationFiled: October 13, 2023Publication date: February 8, 2024Inventors: Han-Pin CHUNG, Chih-Tang PENG, Tien-I BAO
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Patent number: 11823960Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure, a second protruding structure, and a third protruding structure over a substrate. The method also includes performing a depositing process to form a first insulation material layer between the first protruding structure and the second protruding structure. The method further includes performing a first insulation material conversion process onto the first insulation material layer to bend the first protruding structure and the second protruding structure toward opposite directions.Type: GrantFiled: October 26, 2020Date of Patent: November 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Han-Pin Chung, Chih-Tang Peng, Tien-I Bao
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Publication number: 20210233764Abstract: A semiconductor device and a method of forming a semiconductor device include forming a dielectric material, performing a wet oxidation treatment on the dielectric material, and performing a dry anneal on the dielectric material. The dielectric material may be a flowable material. The wet oxidation treatment may include an acid and oxidizer mixture.Type: ApplicationFiled: July 15, 2020Publication date: July 29, 2021Inventors: Han-Pin Chung, Chi-Kang Liu
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Publication number: 20210043523Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure, a second protruding structure, and a third protruding structure over a substrate. The method also includes performing a depositing process to form a first insulation material layer between the first protruding structure and the second protruding structure. The method further includes performing a first insulation material conversion process onto the first insulation material layer to bend the first protruding structure and the second protruding structure toward opposite directions.Type: ApplicationFiled: October 26, 2020Publication date: February 11, 2021Inventors: Han-Pin CHUNG, Chih-Tang PENG, Tien-I BAO
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Patent number: 10872961Abstract: A method of fabricating a semiconductor device includes forming a plurality of semiconductor fins on a substrate. A liner layer is deposited on the semiconductor fins and on the substrate conformally. The semiconductor fins are patterned to form a plurality of active regions on the substrate after the liner layer is deposited.Type: GrantFiled: August 13, 2018Date of Patent: December 22, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Han-Pin Chung
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Patent number: 10840154Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a first insulation material layer in a portion of a trench between a first protruding structure and a second protruding structure over a substrate and performing a pre-treatment process on the first insulation material layer. The method further includes performing a first insulation material conversion process on the first insulation material layer and forming a second insulation material layer covering the first insulation material layer in the trench. In addition, a first distance between upper portions of the first protruding structure and the second protruding structure before performing the first insulation material conversion process is different from a second distance between the upper portions of the first protruding structure and the second protruding structure after performing the first insulation material conversion process.Type: GrantFiled: July 27, 2018Date of Patent: November 17, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO.. LTD.Inventors: Han-Pin Chung, Chih-Tang Peng, Tien-I Bao
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Patent number: 10629497Abstract: A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a first fin structure protruding from the first region of the semiconductor substrate and having a first portion and a second portion over the first portion. The semiconductor device structure also includes a liner structure including a first insulating liner layer and second insulating liner layer. The first insulating liner layer has a bottom portion covering the semiconductor substrate and a sidewall portion covering a sidewall of the first portion of the first fin structure. The second insulating liner layer is over the bottom portion and the sidewall portion of the first insulating liner layer and extends on a top surface of the sidewall portion of the first insulating liner layer. The semiconductor device structure also includes an isolation feature over the liner structure.Type: GrantFiled: February 22, 2018Date of Patent: April 21, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Han-Pin Chung, Jian-Shiou Huang
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Publication number: 20200052081Abstract: A method of fabricating a semiconductor device includes forming a plurality of semiconductor fins on a substrate. A liner layer is deposited on the semiconductor fins and on the substrate conformally. The semiconductor fins are patterned to form a plurality of active regions on the substrate after the liner layer is deposited.Type: ApplicationFiled: August 13, 2018Publication date: February 13, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Han-Pin CHUNG
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Publication number: 20190164848Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a first insulation material layer in a portion of a trench between a first protruding structure and a second protruding structure over a substrate and performing a pre-treatment process on the first insulation material layer. The method further includes performing a first insulation material conversion process on the first insulation material layer and forming a second insulation material layer covering the first insulation material layer in the trench. In addition, a first distance between upper portions of the first protruding structure and the second protruding structure before performing the first insulation material conversion process is different from a second distance between the upper portions of the first protruding structure and the second protruding structure after performing the first insulation material conversion process.Type: ApplicationFiled: July 27, 2018Publication date: May 30, 2019Inventors: Han-Pin CHUNG, Chih-Tang PENG, Tien-I BAO
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Publication number: 20190131186Abstract: A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a first fin structure protruding from the first region of the semiconductor substrate and having a first portion and a second portion over the first portion. The semiconductor device structure also includes a liner structure including a first insulating liner layer and second insulating liner layer. The first insulating liner layer has a bottom portion covering the semiconductor substrate and a sidewall portion covering a sidewall of the first portion of the first fin structure. The second insulating liner layer is over the bottom portion and the sidewall portion of the first insulating liner layer and extends on a top surface of the sidewall portion of the first insulating liner layer. The semiconductor device structure also includes an isolation feature over the liner structure.Type: ApplicationFiled: February 22, 2018Publication date: May 2, 2019Inventors: Han-Pin CHUNG, Jian-Shiou HUANG
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Patent number: 9659776Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: GrantFiled: May 12, 2016Date of Patent: May 23, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Publication number: 20160260610Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: ApplicationFiled: May 12, 2016Publication date: September 8, 2016Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Patent number: 9362404Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: GrantFiled: February 21, 2014Date of Patent: June 7, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Patent number: 9218974Abstract: An integrated circuit structure includes a first gate strip; a gate spacer on a sidewall of the first gate strip; and a contact etch stop layer (CESL) having a bottom portion lower than a top surface of the gate spacer, wherein a portion of a sidewall of the gate spacer has no CESL formed thereon.Type: GrantFiled: June 7, 2013Date of Patent: December 22, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Pin Chung, Bor Chiuan Hsieh, Shiang-Bau Wang, Hun-Jan Tao
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Publication number: 20150243739Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: ApplicationFiled: February 21, 2014Publication date: August 27, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Patent number: 8999834Abstract: An integrated circuit structure includes a first gate strip; a gate spacer on a sidewall of the first gate strip; and a contact etch stop layer (CESL) having a bottom portion lower than a top surface of the gate spacer, wherein a portion of a sidewall of the gate spacer has no CESL formed thereon.Type: GrantFiled: February 20, 2014Date of Patent: April 7, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Pin Chung, Bor Chiuan Hsieh, Shiang-Bau Wang, Hun-Jan Tao
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Patent number: 8900957Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes forming first and second gate structures over first and second regions of a substrate, respectively, forming spacers on sidewalls of the first and second gate structures, the spacers being formed of a first material, forming a capping layer over the first and second gate structures, the capping layer being formed of a second material different from the first material, forming a protection layer over the second region to protect the second gate structure, removing the capping layer over the first gate structure; removing the protection layer over the second region, epitaxially (epi) growing a semiconductor material on exposed portions of the substrate in the first region, and removing the capping layer over the second gate structure by an etching process that exhibits an etching selectivity of the second material to the first material.Type: GrantFiled: November 22, 2013Date of Patent: December 2, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Pin Chung, Bor Chiuan Hsieh, Shiang-Bau Wang, Ming-Jie Huang
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Patent number: 8900956Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes forming first and second gate structures over first and second regions of a substrate, respectively, forming spacers on sidewalls of the first and second gate structures, the spacers being formed of a first material, forming a capping layer over the first and second gate structures, the capping layer being formed of a second material different from the first material, forming a protection layer over the second region to protect the second gate structure, removing the capping layer over the first gate structure; removing the protection layer over the second region, epitaxially (epi) growing a semiconductor material on exposed portions of the substrate in the first region, and removing the capping layer over the second gate structure by an etching process that exhibits an etching selectivity of the second material to the first material.Type: GrantFiled: November 22, 2013Date of Patent: December 2, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Pin Chung, Bor Chiuan Hsieh, Shiang-Bau Wang, Ming-Jie Huang
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Publication number: 20140170846Abstract: An integrated circuit structure includes a first gate strip; a gate spacer on a sidewall of the first gate strip; and a contact etch stop layer (CESL) having a bottom portion lower than a top surface of the gate spacer, wherein a portion of a sidewall of the gate spacer has no CESL formed thereon.Type: ApplicationFiled: February 20, 2014Publication date: June 19, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Pin Chung, Bor Chiuan Hsieh, Shiang-Bau Wang, Hun-Jan Tao