Patents by Inventor Han Q. Le

Han Q. Le has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-high-speed photoconductive devices using semi-insulating layers
    Patent number: 5332918
    Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.
    Type: Grant
    Filed: August 31, 1992
    Date of Patent: July 26, 1994
    Assignee: Massachusetts Institute of Technology
    Inventors: Frank W. Smith, Mark A. Hollis, Arthur R. Calawa, Vicky Diadiuk, Han Q. Le
  • Solid state optical converter
    Patent number: 5313324
    Abstract: This invention provides an optical converter suitable for use as the gain medium in lasers, optical amplifiers and other optical devices. The converter consists of at least one and preferable two or more optical converter elements which are sandwiched and separated by inactive dielectric layers. An optical pump beam may be passed to the active converter elements through an anti-reflection layer at one surface of the converter and a high reflection mirror may be provided at the opposite side of the converter to reflect the pump beam incident thereon back into the converter for a second pass.
    Type: Grant
    Filed: March 27, 1991
    Date of Patent: May 17, 1994
    Assignee: Massachusetts Institute of Technology
    Inventors: Han Q. Le, William D. Goodhue
  • Ultra-high-speed photoconductive devices using semi-insulating layers
    Patent number: 5168069
    Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.
    Type: Grant
    Filed: February 17, 1989
    Date of Patent: December 1, 1992
    Assignee: Massachusetts Institute of Technology
    Inventors: Frank W. Smith, Mark A. Hollis, Arthur R. Calawa, Vicky Diadiuk, Han Q. Le