Patents by Inventor Han Qingyuan

Han Qingyuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma process for removing polymer and residues from substrates
    Patent number: 6834656
    Abstract: A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.
    Type: Grant
    Filed: May 23, 2001
    Date of Patent: December 28, 2004
    Assignee: Axcelis Technology, Inc.
    Inventors: Han Qingyuan, Carlo Waldfried, Orlando Escorcia, Gary Dahrooge, Ivan Berry
  • Plasma process for removing polymer and residues from substrates
    Publication number: 20020185151
    Abstract: A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.
    Type: Application
    Filed: May 23, 2001
    Publication date: December 12, 2002
    Inventors: Han Qingyuan, Carlo Waldfried, Orlando Escorcia, Gary Dahrooge, Ivan Berry