Patents by Inventor Han-Shun Lui

Han-Shun Lui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for determining two dimensional doping profiles with SIMS
    Patent number: 6890772
    Abstract: A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: May 10, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Chin-Kai Liu, Jun-Yean Chiou, Pei-Fen Chou, Han-Shun Lui
  • Method and apparatus for determining two dimensional doping profiles with SIMS
    Publication number: 20030127601
    Abstract: A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).
    Type: Application
    Filed: January 9, 2002
    Publication date: July 10, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Kai Liu, Jun-Yean Chiou, Pei-Fen Chou, Han-Shun Lui