Patents by Inventor Han-Sub Yoon

Han-Sub Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8687424
    Abstract: A flash memory using hot carrier injection and a method of operating the same are provided. A plurality of strings constituting a page are formed on a single p-well and share the p-well. During a program operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the p-well. Thereafter, the accumulated electrons are trapped in a charge trap layer of a memory cell in response to a program voltage applied through a word line. Also, during an erase operation, holes accumulated in response to a bias voltage applied to the p-well are trapped in the charge trap layer in response to an erase voltage. The flash memory performs NAND-type program and erase operations using hot carrier injection.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: April 1, 2014
    Assignee: Intellectual Discovery Co., Ltd.
    Inventors: Han-Sub Yoon, Jong-Suk Lee, Kae-Dal Kwack
  • Publication number: 20110216595
    Abstract: A flash memory using hot carrier injection and a method of operating the same are provided. A plurality of strings constituting a page are formed on a single p-well and share the p-well. During a program operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the p-well. Thereafter, the accumulated electrons are trapped in a charge trap layer of a memory cell in response to a program voltage applied through a word line. Also, during an erase operation, holes accumulated in response to a bias voltage applied to the p-well are trapped in the charge trap layer in response to an erase voltage. The flash memory performs NAND-type program and erase operations using hot carrier injection.
    Type: Application
    Filed: September 9, 2009
    Publication date: September 8, 2011
    Inventors: Han-Sub Yoon, Jong-Suk Lee, Kae-Dal Kwack
  • Patent number: 5907783
    Abstract: A method of fabricating a SOI substrate is disclosed, which includes the steps of: forming trenches in the Si substrate; forming an oxidation preventing film over the Si substrate and at the side-walls of the trenches; forming grooves at the bottoms of trenches by etching the Si substrate using the oxidation preventing film as a mask; carrying out an oxidation using to form an oxide film and a Si device layer isolated by the oxide film; removing the oxidation preventing film; and carrying out a planarization to form the silicon-on-insulator substrate having a planar surface.
    Type: Grant
    Filed: December 26, 1996
    Date of Patent: May 25, 1999
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jin-Hyoung Kim, Kyoon-Hyoung Kim, Han-Sub Yoon
  • Patent number: 5821766
    Abstract: A method and apparatus for measuring the metallurgical channel length of a semiconductor device includes the steps of determining capacitance of gate to substrate in a multiple MOS transistor pattern and MOS capacitor pattern which have the same gate area; subtracting the capacitance of gate to substrate in a MOS transistor from that in a MOS capacitor for providing a difference curve; determining the overlap length by using the capacitance corresponding to a peak shown in the differences curve; and subtracting two times the overlap length .DELTA.L from the gate length Ldrawn in the MOS transistor for providing the metallurgical channel length.
    Type: Grant
    Filed: February 20, 1996
    Date of Patent: October 13, 1998
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Sung-Ki Kim, Jin-Hyoung Kim, Dai-Hoon Lee, Han-Sub Yoon, Myung-Suk Jo