Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: A semiconductor structure includes a substrate, at least one gate electrode, a plurality of source/drain (S/D) regions, a backside contact, a first dielectric layer, and a conductive via. The at least one gate electrode is disposed in the substrate. The S/D regions is disposed in the substrate and laterally disposed aside the at least one gate electrode. The backside contact is disposed above the S/D regions and the at least one gate electrode. The first dielectric layer is disposed between the backside contact and the plurality of S/D regions and the at least one gate electrode. The conductive via is extended through the first dielectric layer to electrically connect the S/D regions and the backside contact. The conductive via includes an anisotropic transport material or a topological material.

Abstract: Embodiments of the present disclosure provide a semiconductor package. In one embodiment, the semiconductor package includes a first integrated circuit die having a first circuit design, and the first integrated circuit die comprises a first device layer and a first interconnect structure. The semiconductor package also includes a second integrated circuit die having a second circuit design different than the first circuit design, and the second integrated circuit die comprises a second device layer and a second interconnect structure having a first side in contact with the first device layer and a second side in direct contact with the first interconnect structure of the first integrated circuit die. The semiconductor package further includes a substrate having a first side bonded to the first interconnect structure, wherein the second integrated circuit die is surrounded by at least a portion of the substrate.

Abstract: A semiconductor device includes a substrate, a plurality of channel layers, two epitaxial structures, a conductive structure, a via, and a graphene barrier. The channel layers and the epitaxial structures are disposed over the substrate. The channel layers are connected between the epitaxial structures. The conductive structure is disposed on the substrate opposite to the epitaxial structures. The via is connected between one of the epitaxial structure and the conductive structure. The graphene barrier surrounds the via.

Abstract: Embodiments of the present disclosure provide a semiconductor package. In one embodiment, the semiconductor package includes a first integrated circuit die having a first circuit design, and the first integrated circuit die comprises a first device layer and a first interconnect structure. The semiconductor package also includes a second integrated circuit die having a second circuit design different than the first circuit design, and the second integrated circuit die comprises a second device layer and a second interconnect structure having a first side in contact with the first device layer and a second side in direct contact with the first interconnect structure of the first integrated circuit die. The semiconductor package further includes a substrate having a first side bonded to the first interconnect structure, wherein the second integrated circuit die is surrounded by at least a portion of the substrate.

Abstract: Embodiments of the present disclosure provide a semiconductor package. In one embodiment, the semiconductor package includes a first integrated circuit die having a first circuit design, and the first integrated circuit die comprises a first device layer and a first interconnect structure. The semiconductor package also includes a second integrated circuit die having a second circuit design different than the first circuit design, and the second integrated circuit die comprises a second device layer and a second interconnect structure having a first side in contact with the first device layer and a second side in direct contact with the first interconnect structure of the first integrated circuit die. The semiconductor package further includes a substrate having a first side bonded to the first interconnect structure, wherein the second integrated circuit die is surrounded by at least a portion of the substrate.

Abstract: Embodiments of the present disclosure provide a semiconductor package comprising a first integrated circuit (IC) die having a first back-end-of-the-line (BEOL) structure, a second integrated circuit die having a second BEOL structure, an integrated BEOL structure having a first side in direct contact with both the first BEOL structure and the second BEOL structure. In some embodiments, a substrate is further disposed at a second side of the integrated BEOL structure to support both the first integrated circuit die and the second integrated circuit die.

Abstract: The present disclosure provides a method for interconnecting components. First and second substrates are provided. First and second components are respectively provided on the first and second substrates, in which the second component is not in contact with the first component. Then, a joint component is formed between the first and second components by passing a flow of a fluid comprising ions of a conductive material between the first and second components and electrolessly plating the first and second components by the conductive material so that the joint component is electrically connected between the first and second components. The present disclosure also provides related interconnection structures and a fixture for forming a related microchannel structure.

Abstract: The present disclosure provides a method for interconnecting components. First and second substrates are provided. First and second components are respectively provided on the first and second substrates, in which the second component is not in contact with the first component. Then, a joint component is formed between the first and second components by passing a flow of a fluid comprising ions of a conductive material between the first and second components and electrolessly plating the first and second components by the conductive material so that the joint component is electrically connected between the first and second components. The present disclosure also provides related interconnection structures and a fixture for forming a related microchannel structure.

Abstract: The present disclosure provides a method for interconnecting components. First and second substrates are provided. First and second components are respectively provided on the first and second substrates, in which the second component is not in contact with the first component. Then, a joint component is formed between the first and second components by passing a flow of a fluid comprising ions of a conductive material between the first and second components and electrolessly plating the first and second components by the conductive material so that the joint component is electrically connected between the first and second components. The present disclosure also provides related interconnection structures and a fixture for forming a related microchannel structure.

Abstract: The present disclosure provides a method for interconnecting components. First and second substrates are provided. First and second components are respectively provided on the first and second substrates, in which the second component is not in contact with the first component. Then, a joint component is formed between the first and second components by passing a flow of a fluid comprising ions of a conductive material between the first and second components and electrolessly plating the first and second components by the conductive material so that the joint component is electrically connected between the first and second components. The present disclosure also provides related interconnection structures and a fixture for forming a related microchannel structure.