Patents by Inventor Han-Tu Lin
Han-Tu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10971721Abstract: Provided is a lithium battery anode material including a graphite material and a composite material. The composite material and the graphite material are crossly mixed together to form a plurality of spherical structures. The composite material includes a silicon material, an agglomerate, and a plurality of protrusions. A plurality of crystals are grown on a surface of the silicon material. The crystals include silicon carbide. The agglomerate includes metal silicide. The protrusions are distributed on a surface of the agglomerate. The protrusions include silicon and metal.Type: GrantFiled: May 21, 2019Date of Patent: April 6, 2021Assignee: AUO Crystal CorporationInventors: Han-Tu Lin, Han-Chang Huang, An-Li He, Yi-Yen Tsou, Meng-Kwei Hsu
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Publication number: 20200395601Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.Type: ApplicationFiled: August 27, 2020Publication date: December 17, 2020Inventors: Kun-Fung LIN, Rong-Ruey JENG, Han-Tu LIN, Chih-Hung CHAN
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Patent number: 10797307Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.Type: GrantFiled: January 12, 2018Date of Patent: October 6, 2020Assignee: AUO Crystal CorporationInventors: Kun-Fung Lin, Rong-Ruey Jeng, Han-Tu Lin, Chih-Hung Chan
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Publication number: 20190355977Abstract: Provided is a lithium battery anode material including a graphite material and a composite material. The composite material and the graphite material are crossly mixed together to form a plurality of spherical structures. The composite material includes a silicon material, an agglomerate, and a plurality of protrusions. A plurality of crystals are grown on a surface of the silicon material. The crystals include silicon carbide. The agglomerate includes metal silicide. The protrusions are distributed on a surface of the agglomerate. The protrusions include silicon and metal.Type: ApplicationFiled: May 21, 2019Publication date: November 21, 2019Applicant: AUO Crystal CorporationInventors: Han-Tu Lin, Han-Chang Huang, An-Li He, Yi-Yen Tsou, Meng-Kwei Hsu
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Patent number: 10403888Abstract: A method for manufacturing a negative electrode material of a lithium battery is provided. The method includes: covering a metal material and a carbon material on a surface of a silicon material; performing a thermal process for reacting the metal material with the carbon material on the surface of the silicon material thereby forming a silicon composite material and at least one projection on the surface of the silicon material, wherein a free end of the projection is extended to form a head, the silicon composite material is used as the negative electrode material of the lithium battery, the silicon composite material comprises a composite layer forming on the surface of the silicon material, and the composite layer comprises a metal silicide, a metal oxide, a silicon carbide and a silicon oxide.Type: GrantFiled: December 30, 2016Date of Patent: September 3, 2019Assignee: AUO Crystal CorporationInventors: Han-Tu Lin, An-Li He, Ying-Ying Su, Chan-Tien Chen, Rong-Ruey Jeng, Kun-Fung Lin
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Publication number: 20180138500Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.Type: ApplicationFiled: January 12, 2018Publication date: May 17, 2018Inventors: Kun-Fung LIN, Rong-Ruey JENG, Han-Tu LIN, Chih-Hung CHAN
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Patent number: 9905845Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.Type: GrantFiled: June 13, 2014Date of Patent: February 27, 2018Assignee: AUO Crystal CorporationInventors: Kun-Fung Lin, Rong-Ruey Jeng, Han-Tu Lin, Chih-Hung Chan
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Publication number: 20170194641Abstract: A method for manufacturing a negative electrode material of a lithium battery is provided. The method includes: covering a metal material and a carbon material on a surface of a silicon material; performing a thermal process for reacting the metal material with the carbon material on the surface of the silicon material thereby forming a silicon composite material and at least one projection on the surface of the silicon material, wherein a free end of the projection is extended to form a head, the silicon composite material is used as the negative electrode material of the lithium battery, the silicon composite material comprises a composite layer forming on the surface of the silicon material, and the composite layer comprises a metal silicide, a metal oxide, a silicon carbide and a silicon oxide.Type: ApplicationFiled: December 30, 2016Publication date: July 6, 2017Inventors: Han-Tu LIN, An-Li HE, Ying-Ying SU, Chan-Tien CHEN, Rong-Ruey JENG, Kun-Fung LIN
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Publication number: 20150079472Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.Type: ApplicationFiled: June 13, 2014Publication date: March 19, 2015Inventors: Kun-Fung LIN, Rong-Ruey JENG, Han-Tu LIN, Chih-Hung CHAN
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Publication number: 20140166091Abstract: A photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.Type: ApplicationFiled: February 24, 2014Publication date: June 19, 2014Applicant: AU Optronics CorporationInventors: MING-JENG HUANG, HAN-TU LIN
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Patent number: 8697986Abstract: The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.Type: GrantFiled: March 1, 2011Date of Patent: April 15, 2014Assignee: Au Optronics CorporationInventors: Ming-Jeng Huang, Han-Tu Lin
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Patent number: 8476100Abstract: A method of forming thin film solar cell includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns. Each of the light-absorbing patterns corresponds to two adjacent first electrodes, partially covers the two adjacent first electrodes, and partially exposes the two adjacent first electrodes. A plurality of second electrodes are formed on the light-absorbing patterns.Type: GrantFiled: March 25, 2010Date of Patent: July 2, 2013Assignee: AU Optronics Corp.Inventors: Kuang-Ting Chou, Han-Tang Chou, Ming-Yuan Huang, Han-Tu Lin
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Patent number: 8431929Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed thereon, an insulation layer disposed on the substrate and overlying the gate, a patterned semiconductor layer disposed on the insulation layer, a source and a drain disposed on the patterned semiconductor layer, a protective layer overlying the insulation layer, the source and the boundary of the drain to expose a portion of the drain, and a pixel electrode disposed on the substrate, overlying the protective layer overlying the boundary of the drain, electrically connected to the exposed drain.Type: GrantFiled: December 9, 2009Date of Patent: April 30, 2013Assignee: AU Optronics Corp.Inventors: Kuo-Lung Fang, Chih-Chun Yang, Han-Tu Lin
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Patent number: 8383466Abstract: A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive layer and a first metal layer are orderly formed on the substrate. A conductive stack layer is formed within each of the TFT/pixel/gate-line regions and the end of the data-line region. Next, a first insulating layer and a semiconductor layer are orderly formed, and a patterned first insulating layer and a patterned semiconductor layer are formed above the conductive stack layer within the TFT region. Then, a second metal layer and a first photoresist layer are respectively formed. Afterwards, the second and the first metal layers are patterned by using the first photoresist layer as a photomask. Finally, the first photoresist layer is reflowed by heat, and part of the reflowed first photoresist layer covers a channel formed within the TFT region.Type: GrantFiled: January 20, 2012Date of Patent: February 26, 2013Assignee: AU Optronics Corp.Inventors: Han-Tu Lin, Chien-Hung Chen, Shiun-Chang Jan
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Patent number: 8357477Abstract: A method of manufacturing a color filter substrate is provided. The color filter substrate includes a substrate, a light-shielding layer, and a plurality of color filter patterns. The substrate has a plurality of annular trough areas, a plurality of central areas, and a light-shielding area positioned among the annular trough areas. Each of the annular trough areas has an inner edge connected to the central area and an outer edge connected to the light-shielding area. The light-shielding layer is disposed on the light-shielding area and extends from the outer edges of the annular trough areas to the top of the annular trough areas. The color filter patterns are disposed on the annular trough areas and the central areas, and the color filter patterns are in contact with a side surface and a part of the bottom surface of the light-shielding layer.Type: GrantFiled: April 2, 2012Date of Patent: January 22, 2013Assignee: Au Optronics CorporationInventors: Chun-Chieh Tsao, Han-Tu Lin
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Patent number: 8349631Abstract: A method for fabricating a TFT array substrate includes following steps. A gate pattern and a first pad pattern are formed on a substrate. A gate insulation layer and a semiconductor layer covering the two patterns are sequentially formed. A patterned photoresist layer having different resist blocks is formed, and patterns and thicknesses of the resist blocks in different regions are adjusted. The semiconductor layer and the gate insulation layer above the first pad pattern are removed through performing an etching process and reducing a thickness of the patterned photoresist layer. After removing the patterned photoresist layer, a source pattern, a drain pattern, and a second pad pattern electrically connected to the first pad pattern are formed. A patterned passivation layer is formed on the gate insulation layer and has a second opening exposing the source pattern or the drain pattern and a third opening exposing the second pad pattern.Type: GrantFiled: September 6, 2011Date of Patent: January 8, 2013Assignee: Au Optronics CorporationInventors: Shine-Kai Tseng, Han-Tu Lin, Shiun-Chang Jan, Kuo-Lung Fang
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Publication number: 20120222729Abstract: The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.Type: ApplicationFiled: March 1, 2011Publication date: September 6, 2012Applicant: AU OPTRONICS CORPORATIONInventors: Ming-Jeng Huang, Han-Tu Lin
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Publication number: 20120189947Abstract: A method of manufacturing a color filter substrate is provided. The color filter substrate includes a substrate, a light-shielding layer, and a plurality of color filter patterns. The substrate has a plurality of annular trough areas, a plurality of central areas, and a light-shielding area positioned among the annular trough areas. Each of the annular trough areas has an inner edge connected to the central area and an outer edge connected to the light-shielding area. The light-shielding layer is disposed on the light-shielding area and extends from the outer edges of the annular trough areas to the top of the annular trough areas. The color filter patterns are disposed on the annular trough areas and the central areas, and the color filter patterns are in contact with a side surface and a part of the bottom surface of the light-shielding layer.Type: ApplicationFiled: April 2, 2012Publication date: July 26, 2012Applicant: AU OPTRONICS CORPORATIONInventors: Chun-Chieh Tsao, Han-Tu Lin
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Patent number: 8187776Abstract: A color filter substrate is provided. The color filter substrate includes a substrate, a light-shielding layer, and a plurality of color filter patterns. The substrate has a plurality of annular trough areas, a plurality of central areas, and a light-shielding area positioned among the annular trough areas. Each of the annular trough areas has an inner edge connected to the central area and an outer edge connected to the light-shielding area. The light-shielding layer is disposed on the light-shielding area and extends from the outer edges of the annular trough areas to the top of the annular trough areas. The color filter patterns are disposed on the annular trough areas and the central areas, and the color filter patterns are in contact with a side surface and a part of the bottom surface of the light-shielding layer.Type: GrantFiled: October 1, 2008Date of Patent: May 29, 2012Assignee: Au Optronics CorporationInventors: Chun-Chieh Tsao, Han-Tu Lin
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Patent number: 8177989Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.Type: GrantFiled: August 10, 2007Date of Patent: May 15, 2012Assignee: AU Optronics Inc.Inventors: Feng-Yuan Gan, Han-Tu Lin, Kuo-Yuan Tu