Patents by Inventor Hanvit Yang
Hanvit Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11744077Abstract: A mold including insulation layers and sacrificial layers is formed on a substrate. A channel hole is formed through the mold. A first deposition process is performed using a first precursor including silane and a second precursor including silane and a halogen element to form a first preliminary blocking layer on a sidewall of the channel hole. A second deposition process is performed using the first precursor to form a second preliminary blocking layer on the sidewall of the channel hole. The first and second preliminary blocking layers form a third preliminary blocking layer. An oxidation process is performed on the third preliminary blocking layer to transform the third preliminary blocking into a first blocking layer. A charge storage layer, a tunnel insulation layer, and a channel layer are formed on the first blocking layer. The sacrificial layer is replaced with a gate electrode.Type: GrantFiled: February 10, 2021Date of Patent: August 29, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangmin Kang, Hanvit Yang, Jihoon Choi
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Patent number: 11594548Abstract: A semiconductor device includes a substrate, a lower structure on the substrate, the lower structure including a first wiring structure, a second wiring structure, and a lower insulating structure covering the first and second wiring structures, a first pattern layer including a plate portion and a via portion, the plate portion being on the lower insulating structure and the via portion extending into the lower insulating structure from a lower portion of the plate portion and overlapping the first wiring structure, a graphene-like carbon material layer in contact with the via portion and the first wiring structure between the via portion and the first wiring structure, gate layers stacked in a vertical direction perpendicular to an upper surface of the substrate and spaced apart from each other on the first pattern layer, and a memory vertical structure penetrating through the gate layers in the vertical direction.Type: GrantFiled: September 23, 2020Date of Patent: February 28, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangmin Kang, Hanvit Yang
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Publication number: 20230035421Abstract: A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.Type: ApplicationFiled: April 14, 2022Publication date: February 2, 2023Inventors: Suhwan LIM, Nambin KIM, Samki KIM, Taehun KIM, Hanvit YANG, Changhee LEE, Jaehun JUNG, Hyeongwon CHOI
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Publication number: 20210384200Abstract: A mold including insulation layers and sacrificial layers is formed on a substrate. A channel hole is formed through the mold. A first deposition process is performed using a first precursor including silane and a second precursor including silane and a halogen element to form a first preliminary blocking layer on a sidewall of the channel hole. A second deposition process is performed using the first precursor to form a second preliminary blocking layer on the sidewall of the channel hole. The first and second preliminary blocking layers form a third preliminary blocking layer. An oxidation process is performed on the third preliminary blocking layer to transform the third preliminary blocking into a first blocking layer. A charge storage layer, a tunnel insulation layer, and a channel layer are formed on the first blocking layer. The sacrificial layer is replaced with a gate electrode.Type: ApplicationFiled: February 10, 2021Publication date: December 9, 2021Inventors: Sangmin Kang, Hanvit Yang, Jihoon Choi
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Publication number: 20210313341Abstract: A semiconductor device includes a substrate, a lower structure on the substrate, the lower structure including a first wiring structure, a second wiring structure, and a lower insulating structure covering the first and second wiring structures, a first pattern layer including a plate portion and a via portion, the plate portion being on the lower insulating structure and the via portion extending into the lower insulating structure from a lower portion of the plate portion and overlapping the first wiring structure, a graphene-like carbon material layer in contact with the via portion and the first wiring structure between the via portion and the first wiring structure, gate layers stacked in a vertical direction perpendicular to an upper surface of the substrate and spaced apart from each other on the first pattern layer, and a memory vertical structure penetrating through the gate layers in the vertical direction.Type: ApplicationFiled: September 23, 2020Publication date: October 7, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Sangmin KANG, Hanvit YANG
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Patent number: 9799657Abstract: The inventive concepts provide methods of manufacturing a semiconductor device. The method includes forming a thin layer structure including insulating layers and sacrificial layers alternately and repeatedly stacked on a substrate, forming a through-hole penetrating the thin layer structure and exposing the substrate, forming a semiconductor layer covering an inner sidewall of the through-hole and partially filling the through-hole, oxidizing a first portion of the semiconductor layer to form a first insulating layer, and injecting oxygen atoms into a second portion of the semiconductor layer. An oxygen atomic concentration of the second portion is lower than that of the first insulating layer. Oxidizing the first portion and injecting the oxygen atoms into the second portion are performed using an oxidation process at the same time.Type: GrantFiled: June 23, 2014Date of Patent: October 24, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jintae Noh, Bio Kim, Su-Jin Shin, Hanvit Yang, Kihyun Hwang
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Publication number: 20170162578Abstract: The inventive concepts provide methods of manufacturing a semiconductor device. The method includes forming a thin layer structure including insulating layers and sacrificial layers alternately and repeatedly stacked on a substrate, forming a through-hole penetrating the thin layer structure and exposing the substrate, forming a semiconductor layer covering an inner sidewall of the through-hole and partially filling the through-hole, oxidizing a first portion of the semiconductor layer to form a first insulating layer, and injecting oxygen atoms into a second portion of the semiconductor layer. An oxygen atomic concentration of the second portion is lower than that of the first insulating layer. Oxidizing the first portion and injecting the oxygen atoms into the second portion are performed using an oxidation process at the same time.Type: ApplicationFiled: June 23, 2014Publication date: June 8, 2017Inventors: Jintae NOH, Bio KIM, Su-Jin SHIN, Hanvit YANG, Kihyun HWANG
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Patent number: 9508737Abstract: Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. A first vertical channel pattern is disposed in a lower portion of each vertical channel structure. A gate oxide layer is formed on a sidewall of the first vertical channel pattern. A recess region is formed in the substrate between the vertical channel structures. A buffer oxide layer is formed in the recess region. An oxidation inhibiting layer is provided in the substrate to surround the recess region. The oxidation inhibiting layer is in contact with the buffer oxide layer and inhibits growth of the buffer oxide layer.Type: GrantFiled: November 12, 2014Date of Patent: November 29, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Hwan Kim, Hanvit Yang, Jintae Noh, Dongchul Yoo
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Publication number: 20150279857Abstract: Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. A first vertical channel pattern is disposed in a lower portion of each vertical channel structure. A gate oxide layer is formed on a sidewall of the first vertical channel pattern. A recess region is formed in the substrate between the vertical channel structures. A buffer oxide layer is formed in the recess region. An oxidation inhibiting layer is provided in the substrate to surround the recess region. The oxidation inhibiting layer is in contact with the buffer oxide layer and inhibits growth of the buffer oxide layer.Type: ApplicationFiled: November 12, 2014Publication date: October 1, 2015Inventors: Jung-Hwan KIM, Hanvit YANG, Jintae NOH, Dongchul YOO
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Patent number: 8980731Abstract: Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.Type: GrantFiled: December 21, 2012Date of Patent: March 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Ho Kim, Sunghae Lee, Hanvit Yang, Dongwoo Kim, Chaeho Kim, Daehyun Jang, Ju-Eun Kim, Yong-Hoon Son, Sangryol Yang, Myoungbum Lee, Kihyun Hwang
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Publication number: 20130115761Abstract: Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.Type: ApplicationFiled: December 21, 2012Publication date: May 9, 2013Inventors: Jung Ho Kim, Sunghae Lee, Hanvit Yang, Dongwoo Kim, Chaeho Kim, Daehyun Jang, Ju-Eun Kim, Yong-Hoon Son, Sangryol Yang, Myoungbum Lee, Kihyun Hwang