Patents by Inventor Han Wang
Han Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250255841Abstract: Methods for treating a cytokine storm in a subject in need thereof, the method comprising: administering a therapeutically effective amount of a therapeutic selected from the group consisting of (+)-(S)-2-(6-methoxynaphthalen-2-yl) propanoic acid, acetylsalicylic acid, dexamethasone, azathioprine and pharmaceutically acceptable salts thereof to the subject, wherein the cytokine storm is associated with an Acinetobacter baumannii infection in the subject.Type: ApplicationFiled: March 12, 2024Publication date: August 14, 2025Inventors: Han Wang, Qi XU, Guan YANG, Sheng CHEN
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Publication number: 20250249412Abstract: A method of preparing a flexible ceramic membrane by combining manganese oxide with layer-by-layer assembly technology, which belongs to the field of drinking water purification and wastewater pollution control, is used to solve the problems of poor hydrophilicity of existing organic membranes and high cost of ceramic membranes prepared using organic membranes. The advantages of the polyelectrolyte layer's anti-chlorination property is utilized to acquire the advantages of flexible ceramics, thereby solving the problems of poor hydrophilicity and high cost of existing organic membranes. The binding force of positive and negative charges is utilized for intercepting colloidal substances in water so as to solve the problem of fouling. Therefore, a foundation for its research in the field of drinking water purification and wastewater pollution control is laid.Type: ApplicationFiled: March 28, 2025Publication date: August 7, 2025Inventors: Panpan WANG, Yajuan CAI, Jun MA, Junda YI, Han WANG
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Patent number: 12382468Abstract: A method and a user equipment (UE) for handling a survival time state are provided. The method includes: receiving a Packet Data Convergence Protocol (PDCP) configuration for indicating that a Data Radio Bearer (DRB) associated with a PDCP entity supports a survival time state functionality, the PDCP entity being associated with at least two Radio Link Control (RLC) entities; receiving an Uplink (UL) grant for retransmission of a Medium Access Control (MAC) Protocol Data Unit (PDU), the MAC PDU including data from the DRB; entering the survival time state for the DRB upon receiving the UL grant; and activating a PDCP duplication for the PDCP entity during the survival time state.Type: GrantFiled: July 21, 2022Date of Patent: August 5, 2025Assignee: SHARP KABUSHIKI KAISHAInventors: Heng-Li Chin, Hai-Han Wang, Hsin-Hsi Tsai, Chia-Hung Wei
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Patent number: 12376321Abstract: A semiconductor device includes a semiconductor substrate, a channel region, a gate structure, two epitaxial structures, and two silicide structures. The channel region is disposed on the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and over the channel region. The epitaxial structures are connected at opposite ends of the channel region and are disposed opposite to each other relative to the gate structure. The silicide structures respectively surround the epitaxial structures. A method of manufacturing a semiconductor device is also provided.Type: GrantFiled: February 18, 2022Date of Patent: July 29, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang
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Patent number: 12374592Abstract: A semiconductor device includes semiconductor dies and a redistribution structure. The semiconductor dies are encapsulated in an encapsulant. The redistribution structure extends on the encapsulant and electrically connects the semiconductor dies. The redistribution structure includes dielectric layers and redistribution conductive layers alternately stacked. An outermost dielectric layer of the dielectric layers further away from the semiconductor dies is made of a first material. A first dielectric layer of the dielectric layers on which the outermost dielectric layer extends is made of a second material different from the first material. The first material includes at least one material selected from the group consisting of an epoxy resin, a phenolic resin, a polybenzooxazole, and a polyimide having a curing temperature lower than 250° C.Type: GrantFiled: June 25, 2021Date of Patent: July 29, 2025Assignee: Taiwan Semiconductor Manufacturing, Ltd.Inventors: Cheng-Chieh Wu, Ting Hao Kuo, Kuo-Lung Pan, Po-Yuan Teng, Yu-Chia Lai, Shu-Rong Chun, Mao-Yen Chang, Wei-Kang Hsieh, Pavithra Sriram, Hao-Yi Tsai, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
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Patent number: 12369164Abstract: A method and a user equipment (UE) for small data transmission (SDT) are provided. The method includes: receiving, from a base station (BS), a common time alignment (TA) timer configured via system information; receiving, from the BS, a configured grant (CG)-SDT-specific TA timer configured via a CG-SDT-specific configuration; and determining whether to maintain or release a physical uplink control channel (PUCCH) based on the expirations of the common TA timer and the CG-SDT-specific TA timer, wherein the PUCCH is maintained if the UE determines that the CG-SDT-specific TA timer has expired, and the PUCCH is released if the UE determines that the common TA timer has expired.Type: GrantFiled: October 14, 2022Date of Patent: July 22, 2025Assignee: SHARP KABUSHIKI KAISHAInventors: Hsin-Hsi Tsai, Heng-Li Chin, Yung-Lan Tseng, Hai-Han Wang
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Patent number: 12369388Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a fin structure on a substrate, forming a polysilicon gate structure on a first portion of the fin structure, forming an opening in a second portion of the fin structure, wherein the first and second portions of the fin structure is adjacent to each other, forming a recess laterally on a sidewall of the first portion of the fin structure underlying the polysilicon gate structure, and forming an inner spacer structure within the recess. The inner spacer structure comprises an inner air spacer enclosed by a first dielectric spacer layer and a second dielectric spacer layer.Type: GrantFiled: July 27, 2022Date of Patent: July 22, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tetsuji Ueno, Ting-Ting Chen
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Patent number: 12363690Abstract: A wireless communication method, a User Equipment (UE), and a Base Station (BS) for performing repetition-based Uplink (UL) transmissions are provided. The wireless communication method includes receiving, from the BS, a Radio Resource Control (RRC) message including first information indicating a repetition type, second information indicating a plurality of Transmission Configuration Indicator (TCI) states, and third information including a plurality of items each configuring a Physical Uplink Shared Channel (PUSCH) resource allocation; receiving Downlink Control Information (DCI) that indicates one of the plurality of items; determining a set of nominal PUSCH repetitions; and transmitting at least one actual PUSCH repetition that is determined based on the set of nominal PUSCH repetitions, wherein each nominal PUSCH repetition in the set of nominal PUSCH repetitions maps to one of the plurality of TCI states.Type: GrantFiled: July 27, 2021Date of Patent: July 15, 2025Assignee: SHARP KABUSHIKI KAISHAInventors: Wan-Chen Lin, Chia-Hao Yu, Hai-Han Wang
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Patent number: 12363758Abstract: A method related to random access (RA) and a user equipment (UE) are provided. The method includes: initiating a RA procedure; identifying the RA procedure is associated with a service; identifying the service is supported by a base station (BS); determining whether to perform a comparison with a reference signal received power (RSRP) threshold for determining a RA type of the RA procedure according to a resource configuration for the RA type; determining the RA type according to the resource configuration in response to the resource configuration being that a resource selected for the RA procedure is configured with merely one RA type associated with the service; and performing the comparison with the RSRP threshold for determining the RA type in response to the resource configuration being that the resource selected for the RA procedure is not configured with merely one RA type associated with the service.Type: GrantFiled: October 18, 2022Date of Patent: July 15, 2025Assignee: SHARP KABUSHIKI KAISHAInventors: Chia-Hung Wei, Hai-Han Wang, Hung-Chen Chen
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Patent number: 12363980Abstract: The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.Type: GrantFiled: February 28, 2022Date of Patent: July 15, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Han Wang, Ding-Kang Shih, Chun-Hsiung Lin, Teng-Chun Tsai, Zhi-Chang Lin, Akira Mineji, Yao-Sheng Huang
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Patent number: 12360153Abstract: A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.Type: GrantFiled: October 24, 2022Date of Patent: July 15, 2025Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Han Wang, Chun-Hsiung Lin
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Patent number: 12358238Abstract: Disclosed in the present invention is a microfiber high-energy implantation device for manufacturing three-dimensional carbon fiber reinforced composites, wherein the device comprises: a micro fiber feeding module, a micro fiber orientation arrangement module, a micro fiber electrifying module, a micro fiber accelerator injection module, a vacuum generator module, a high-voltage electrostatic acceleration module, an accelerator bunching module, and a micro fiber extraction control module. The present invention uses the large scale micro fibers subjected to charging treatment and reaching scale requirement of the target charge-mass ratio as the fiber source for high-energy implantation, and uses the high-voltage electrostatic acceleration electric field to accelerate and energize the array large-scale micro fibers which are uniformly and directionally arranged, so that the speed and energy thereof can meet the implantation requirement.Type: GrantFiled: November 15, 2021Date of Patent: July 15, 2025Assignee: ZHEJIANG UNIVERSITYInventors: Yinglin Ke, Jiangxiong Li, Weidong Zhu, Qing Wang, Han Wang
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Patent number: 12356464Abstract: A method and a User Equipment (UE) for performing uplink repetitions and a related base station (BS) are provided. The method includes a UE receiving a Reference Signal Received Power (RSRP) threshold from a Base Station (BS); initiating a 4-step Random Access (RA) procedure; performing a Downlink (DL) Reference Signal (RS) measurement to obtain an RSRP measurement result; and performing a Message 1 (Msg1) repetition operation and a Message 3 (Msg3) repetition request operation within the 4-step RA procedure after determining that the RSRP measurement result is equal to or less than the RSRP threshold.Type: GrantFiled: March 2, 2023Date of Patent: July 8, 2025Assignee: SHARP KABUSHIKI KAISHAInventors: Tzu-Wen Chang, Chie-Ming Chou, Chia-Hung Wei, Hai-Han Wang
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Publication number: 20250218993Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a first insulating layer, and a conductive pillar over the substrate. The conductive pillar is embedded in the first insulating layer, and a top surface of the conductive pillar is exposed by the first insulating layer. The method includes forming a second insulating layer over the first insulating layer and the conductive pillar. The second insulating layer has a hole over the top surface of the conductive pillar. The method includes forming a conductive via structure in the hole and a conductive line over the conductive via structure and the second insulating layer. The conductive via structure has a first strip shape in a first top view of the conductive via structure.Type: ApplicationFiled: January 3, 2024Publication date: July 3, 2025Inventors: Tian HU, Po-Han WANG, Yu-Hsiang HU, Hung-Jui KUO
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Publication number: 20250212733Abstract: A hedge trimmer includes a body including a housing; a power device including a motor disposed in the housing and configured to drive the hedge trimmer to work; and a battery pack for providing energy for the motor. The motor includes a stator and a rotor, an outer diameter of the motor is greater than or equal to 45 mm and less than or equal to 70 mm, the stator includes a core formed by multiple laminations stacked, the core has a stack length in a direction in which the laminations are stacked, the stack length of the stator is greater than or equal to 20 mm and less than or equal to 35 mm, and the ratio of the outer diameter of the motor to the stack length is greater than or equal to 1.7 and less than or equal to 3.Type: ApplicationFiled: December 16, 2024Publication date: July 3, 2025Inventors: Yang Li, Yifan Xu, Han Wang, Rui Zhan
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Patent number: 12347857Abstract: A disordered rocksalt (DRS) having improved characteristic has a cation comprised of lithium and one other metal and an anion comprised of oxygen and fluorine, and one or more of phosphorous, sulfur, and nitrogen. The substitution of one or more of P, S, and N on the oxygen anion site may realize improved cycle life of the battery and/or may be useful to make safer batteries.Type: GrantFiled: June 1, 2023Date of Patent: July 1, 2025Assignee: Wildcat Discovery Technologies, Inc.Inventors: Tanghong Yi, Han Wang, Bin Li
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Patent number: 12347801Abstract: A semiconductor package including a plurality of semiconductor devices, an insulating layer, and a redistribution layer is provided. The insulating layer is disposed over the semiconductor device. The redistribution layer is disposed over the insulating layer and electrically connected to the semiconductor device. The redistribution layer includes a conductive line portion. The semiconductor package has a stitching zone, and the insulating layer has a ridge structure on a surface away from the semiconductor device and positioned within the stitching zone.Type: GrantFiled: April 27, 2023Date of Patent: July 1, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Han Wang, Hung-Jui Kuo, Shih-Peng Tai, Yu-Hsiang Hu, I-Chia Chen
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Patent number: 12349119Abstract: A wireless communication method for performing logical-channel-based prioritization by a UE configured with a first IE relating to the logical-channel-based prioritization is provided. The wireless communication method includes: determining whether a PUCCH for an SR transmission overlaps a PUSCH; determining whether the UE is configured with a second IE relating to a simultaneous transmission function of the PUCCH for the SR transmission and the PUSCH; and in a case that the PUCCH for the SR transmission overlaps the PUSCH, performing the logical-channel-based prioritization according to at least one of: whether the UE is configured with the second IE, and a value of the second IE, if the UE is configured with the second IE.Type: GrantFiled: August 5, 2022Date of Patent: July 1, 2025Assignee: SHARP KABUSHIKI KAISHAInventors: Chia-Hsin Lai, Hai-Han Wang, Heng-Li Chin
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Patent number: 12349068Abstract: A method for communicating directly with commodity Wi-Fi transceivers (TRXs) via backscatter modulation in an integrated tag device is provided. The method includes sensing an incident Wi-Fi? compliant wake-up signal. The method than reflects the incident Wi-Fi-complaint wake-up signal by encoding data from the tag device such that the reflected signal follows the Wi-Fi standard compliant and can be decoded by another WiFi-device. An integrated device includes a downlink Wi-Fi compatible wake-up receiver that checks timing of Wi-Fi compatible signals for a wake-up packet. The device has a modulator that is turned on in response to the wake-up packet and a mixer in the modulator hat mixes tag data with a payload packet from received Wi-Fi payload. Backscatter switches backscatter the response.Type: GrantFiled: February 12, 2021Date of Patent: July 1, 2025Assignee: The Regents of the University of CaliforniaInventors: Po-Han Wang, Patrick Mercier, Dinesh Bharadia
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Patent number: 12346656Abstract: Embodiments of the present disclosure relate to feature crossing for machine learning. According to example embodiments of the present disclosure, a method comprises determining a semantic correlation relationship between a plurality of feature categories, the semantic correlation relationship indicating respective degrees of semantic correlation between respective pairs of feature categories among the plurality of feature categories; obtaining at least two features classified in at least two of the plurality of feature categories for machine learning; and performing feature crossing on the at least two features based on the semantic correlation relationship.Type: GrantFiled: May 5, 2022Date of Patent: July 1, 2025Assignee: Lemon Inc.Inventors: Qingyi Lu, Yuan Gao, Hongyu Xiong, Han Wang, Bin Liu, Xiangyu Zeng, Rui Li, Yiqi Feng