Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a gate structure over a substrate and forming source and drain regions adjacent to the gate structure. The method also includes forming a first ILD layer surrounding the gate structure over the source and drain regions and forming a contact modulation structure over the gate structure. The method also includes etching the first ILD layer and the contact modulation structure to form a first contact trench over the source and drain regions and a second contact trench over the gate structure. The method further includes forming a first contact in the first contact trench and a second contact in the second contact trench. In addition, the first ILD layer has a first etching rate and the contact modulation structure has a second etching rate that is less than the first etching rate.

Abstract: A semiconductor device with the metal fuse is provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.

Abstract: A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.

Abstract: A semiconductor device structure and a method of fabricating the same are provided. The semiconductor structure includes a substrate and an interconnection structure formed over the substrate. The interconnection structure includes a first dielectric layer and a first stress-reducing structure formed in the first dielectric layer. The interconnection structure further includes a first conductive feature formed in the first dielectric layer, and the first conductive feature is surrounded by the first stress-reducing structure.

Abstract: An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred.

Abstract: A semiconductor device with the metal fuse and a fabricating method thereof are provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.

Abstract: Embodiments of a semiconductor device structure and a method of fabricating the same are provided. The semiconductor device structure includes a substrate and a first layer formed over the substrate. The semiconductor device structure further includes a stress-reducing structure formed in the first layer, and a portion of the first layer is surrounded by the stress-reducing structure. The semiconductor device structure further includes a conductive feature formed in the portion of the first layer surrounded by the stress-reducing structure.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a gate structure over a substrate and forming source and drain regions adjacent to the gate structure. The method also includes forming a first ILD layer surrounding the gate structure over the source and drain regions and forming a contact modulation structure over the gate structure. The method also includes etching the first ILD layer and the contact modulation structure to form a first contact trench over the source and drain regions and a second contact trench over the gate structure. The method further includes forming a first contact in the first contact trench and a second contact in the second contact trench. In addition, the first ILD layer has a first etching rate and the contact modulation structure has a second etching rate that is less than the first etching rate.

Abstract: A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.

Abstract: A method of forming a chip package portion having a reduced loading effect between various metal lines during a leveling process comprises forming a first layer, a passivation layer over the first layer, a second layer over the passivation layer, and a third layer over the second layer. The method also comprises forming a patterned opening having multiple depths by removing portions of the first layer, the passivation layer, the second layer, and the third layer by way of one or more removal processes that remove portions of the first layer, the passivation layer, the second layer, and the third layer in accordance with one or more patterned photoresist depositions.

Abstract: A semiconductor device with the metal fuse and a fabricating method thereof are provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.

Abstract: An integrated circuit includes a p-type region formed beneath a surface of a semiconductor substrate, and an n-type region formed beneath the surface of the semiconductor substrate. The n-type region meets the p-type region at a p-n junction. A diffusion barrier structure, which is beneath the surface of the semiconductor substrate and extends along a side of the p-n junction, limits lateral diffusion between the p-type region and n-type region.

Abstract: Embodiments of a semiconductor device structure and a method of fabricating the same are provided. The semiconductor device structure includes a substrate and a first layer formed over the substrate. The semiconductor device structure further includes a stress-reducing structure formed in the first layer, and a portion of the first layer is surrounded by the stress-reducing structure. The semiconductor device structure further includes a conductive feature formed in the portion of the first layer surrounded by the stress-reducing structure.

Abstract: A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.

Abstract: A semiconductor device with the metal fuse is provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.

Abstract: An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred.

Abstract: A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.

Abstract: An integrated circuit includes a p-type region formed beneath a surface of a semiconductor substrate, and an n-type region formed beneath the surface of the semiconductor substrate. The n-type region meets the p-type region at a p-n junction. A diffusion barrier structure, which is beneath the surface of the semiconductor substrate and extends along a side of the p-n junction, limits lateral diffusion between the p-type region and n-type region.

Abstract: A semiconductor device with the metal fuse is provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.