Abstract: A lithography system is provided. The lithography system includes a mask and an optical module. The optical module is configured to optically form an invisible pellicle over the mask to protect the mask from contaminant particles.

Abstract: Methods are provided for the highlighting of features in composite images through the alternating of images having complementary colors. An image having a feature of interest is used to generate one or more pseudo color images. A series of a pseudo color images and one or more additional pseudo color or original color images are then alternately displayed so that the differently colored regions among the series of images are easily recognizable to an operator. The differently colored regions differ in having hues that are complementary to one another. The methods are particularly useful for the display of information using two or more imaging modalities and channels, such as is the case for some medical applications in which a natural-light image of pink or light-red tissue with deeper red or blue vasculature is overlaid with another functional image.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: A preparation method of battery composite material includes steps of providing a manganese-contained compound, phosphoric acid, a lithium-contained compound, a carbon source, and deionized water; processing a reaction of the manganese-contained compound, the phosphoric acid, and a portion of the deionized water to produce a first product; placing the first product at a first temperature for at least a first time period to produce a first precursor, wherein the chemical formula of the first precursor is written by Mn5(HPO4)2(PO4)2(H2O)4; and processing a reaction of at least the first precursor, the lithium-contained compound, and another portion of the deionized water, adding the carbon source, and then calcining to produce battery composite material. Therefore, the preparation time is shortened, the energy consuming is reduced, the phase forming of the precursor is more stable, and the advantages of reducing the cost of preparation and enhancing the quality of products are achieved.

Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.

Abstract: Biopsy imaging devices with an imaging stage configured to rotate and tilt a biological sample, as well as a method for using it, are described. The stage can use rotating bearings or extendible, telescoping arms. The device has a white light for taking normal pictures and a near-infrared laser light for causing a fluorescence-biomolecule probed sample to fluoresce for fluorescence images in a light-tight housing. A set of both types of pictures are taken from angles around, above, and below the biopsy sample with one or more cameras to generate a 3-D model in a computer of the biopsy with fluorescence markings. The 3-D model can then be rendered and viewed on a display by a surgeon to determine if sufficient margins were removed from the patient.

Abstract: In accordance with an embodiment of the invention, there is provided a method for: a) high-throughput, multiplexed, affinity-based separation of proteins—especially low abundance proteins—from complex biological mixtures such as serum; and b) high-throughput, multiplexed, affinity-based separation of cells—especially rare cells—from complex biological mixtures such as blood or blood fractions. The separation of proteins or cells is achieved based on differential binding to affinity-capture beads of different sizes and then sorting the protein-bound or cell-bound beads using the concept of centrifugal-induced Dean migration in a spiral microfluidic device. This method enables continuous-flow, high throughput affinity-separation of milligram-scale protein samples or millions of cells in minutes after binding.

Abstract: The present disclosure provides methods for treating diseased cells in a subject using sonodynamic therapy (SDT), comprising: administering to the subject a sonosensitizer composition comprising IRDye® 700DX, wherein the sonosensitizer composition associates with the diseased cell; and thereafter applying an ultrasonic wave to the diseased cell.

Abstract: A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer.

Abstract: A semiconductor device structure and a method of fabricating the same are provided. The method for manufacturing a semiconductor structure includes forming a dielectric layer over a substrate and forming a first structure through the dielectric layer such that a first portion of the dielectric layer is disposed in between the first structure. The method for manufacturing a semiconductor structure further includes forming a first via hole and a second via hole through the first portion of the dielectric layer and forming a trench connecting the first via hole and the second via hole in the dielectric layer. The method for manufacturing a semiconductor structure further includes forming a conductive feature in the first via hole, the second via hole, and the trench. In addition, the first structure and the dielectric layer are made of different materials from each other.

Abstract: An antenna module suited for a portable electronic device is provided. The antenna module includes a heat dissipation unit, a first antenna and a second antenna. The heat dissipation unit contacts a heat source of the portable electronic device. The first antenna and the second antenna are disposed at different side portions of the heat dissipation unit. The heat dissipation unit has a slot with at least one bending portion. An orthogonal projection of at least one of the first antenna and the second antenna on a projection plane of the heat dissipation unit is partly overlapped with an orthogonal projection of the slot on the projection plane.

Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer.

Abstract: A preparation method of a lithium nickel manganese oxide cathode material of a battery includes steps of providing a nickel compound, a manganese compound, a first quantity of lithium compound, a second quantity of lithium compound and a compound containing metallic ions, mixing the nickel compound, the first quantity of lithium compound, dispersant and deionized water to produce first product solution, adding the manganese compound into the first product solution and mixing to produce second product solution, performing a first grinding to produce first precursor solution, mixing the second quantity of lithium compound, the compound containing the metallic ions and the first precursor solution, then performing a second grinding to produce second precursor solution, and calcining the second precursor solution to produce the lithium nickel manganese oxide cathode material of the battery, the formula of which is written by Li1.0+xNi0.5Mn1.5MyO4. Therefore, the activation energy of reaction can be reduced.

Abstract: A data analysis system includes: a transmission unit receiving research data; a storage unit saving the research data; a control unit generating a research approach, a first parameter, and a second parameter according to an operation instruction; a processing unit obtains research data from to-be-analyzed data by using the transmission unit according to the research approach, and the parameters; the processing unit analyzes the parameters and the research data by using a statistical algorithm, to generate statistical information; and then analyzes the related first parameter, second parameter, and various pieces of research data according to a test algorithm, to generate a statistical test; and a display unit, connected to the processing unit and used to display integration information, where the integration information is obtained by the processing unit by integrating the related first parameter, second parameter, statistical information, and statistical test according to an integration algorithm.

Abstract: A method of fabricating a semiconductor device includes forming a first, a second and a third trenches extending through a dielectric layer over a substrate, forming a material layer in the first, the second and the third trenches, forming a sacrificial layer to fully fill in the remaining first and the second trenches, recessing the sacrificial layer in the first trench and the second trench, recessing the material layer in the first trench and in the second trench. After recessing the material layer, a top surface of the remaining material layer is co-planar with a top surface of the remaining sacrificial layer in the first trench and a top surface of the remaining material layer is co-planar with a top surface of the remaining sacrificial layer in the second trench. The method also includes removing the remaining sacrificial layer in the first trench and the second trench.

Abstract: Methods and devices are disclosed for the imaging of a biological sample with a top-down camera and a side-view camera. A biological sample is held on an imaging stage that is capable of rotation in two orthogonal axes. The top-down and side-view cameras can record a series of images of the sample using multiple imaging modalities at different rotational positions of the imaging stage. The top-down camera can be translated along its optical axis to affect the camera zoom and influence the resolution and field of view of the recorded images. Fluorescence excitation light sources can be positioned proximate to each of the top-down and side-view cameras to provide substantially uniform illumination of the sample for imaging with each camera.