Abstract: A transflective liquid crystal display device including: first and second transparent substrates facing each other with a reflective portion and a transmissive portion; gate and data lines over the first transparent substrate perpendicularly crossing each other and defining pixel regions; a thin film transistor connected to the gate and data lines in the pixel region; an insulator in the thin film transistor on the first substrate covering the gate line; a passivation layer in the reflection portion on the insulator and on the thin film transistor; a pixel electrode in the reflective and transmissive portions, wherein the pixel electrode contacts both the passivation layer in the reflective potion and the insulator in the transmissive portion; a reflector on the pixel electrode in the reflective portion; color filters on a rear surface of the second transparent substrate, the color filters having through holes; column spacers formed between the reflector and the color filters, each column spacer corresponding

Abstract: A transflective liquid crystal display device including: first and second transparent substrates facing each other with a reflective portion and a transmissive portion; gate and data lines over the first transparent substrate perpendicularly crossing each other and defining pixel regions; a thin film transistor connected to the gate and data lines in the pixel region; an insulator in the thin film transistor on the first substrate covering the gate line; a passivation layer in the reflection portion on the insulator and on the thin film transistor; a pixel electrode in the reflective and transmissive portions, wherein the pixel electrode contacts both the passivation layer in the reflective potion and the insulator in the transmissive portion; a reflector on the pixel electrode in the reflective portion; color filters on a rear surface of the second transparent substrate, the color filters having through holes; column spacers formed between the reflector and the color filters, each column spacer corresponding

Abstract: An in-plane switching liquid crystal display device includes a gate line and a data line on a substrate, the gate and data lines crossing each other to define a pixel region, a thin film transistor electrically connected to the gate and data lines, a pixel electrode connected to the thin film transistor, and a common electrode alternately arranged with the pixel electrode to form n blocks in the pixel region. Widths of some of the blocks are different than widths of other of the blocks.

Abstract: A thin film transistor and its fabrication method. The transistor includes a buffer layer on a substrate, and a poly-crystalline semiconductor layer on the buffer layer. The poly-crystalline semiconductor layer includes a channel layer, offset regions along sides of the channel layer, sequential doping regions along sides of the offset regions, and source and drain regions. The doping concentration is sequentially changed in the sequential doping region. A sloped gate insulation layer is on the poly-crystalline semiconductor layer. A gate electrode having a main gate electrode and auxiliary gate electrodes is on the sloped insulation layer. An interlayer is over the gate electrode and source and drain electrodes are formed in contact with the source and drain regions and on the interlayer. The poly-crystalline semiconductor layer is formed by ion doping a poly-crystalline semiconductor layer through the gate insulation layer while using the gate electrode as a mask.

Abstract: A transflective type liquid crystal display (LCD) device and method for manufacturing the same is disclosed, in which it is possible to decrease manufacturing cost and improve yield by decreasing the number of masks. The transflective type LCD device includes a substrate having reflection and transmission regions, a first insulating layer on an entire surface of the substrate whereon gate and storage electrodes are formed at predetermined portions, a transparent electrode overlapped with the storage electrode and formed over the transmission region of the first insulating layer, and a second insulating layer formed over the reflection region of the substrate and having a contact hole for exposing a predetermined portion of the transparent electrode.

Abstract: An array substrate for a transflective LCD includes a data line and a gate line on a substrate crossing each other to define a pixel region, the pixel region including a reflective region, a transparent region and a boundary region between the reflective region and the transparent region; a thin film transistor near the crossing of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode; a passivation layer in the reflective region, the passivation layer having an opening in the transparent region and the boundary region; a reflective electrode in the reflective and boundary regions, the reflective electrode contacting the drain electrode through the opening in the boundary region; and a transparent electrode contacting the reflective electrode.

Abstract: A transflective type liquid crystal display (LCD) device and method for manufacturing the same is disclosed, in which it is possible to decrease manufacturing cost and improve yield by decreasing the number of masks. The transflective type LCD device includes a substrate having reflection and transmission regions, a first insulating layer on an entire surface of the substrate whereon gate and storage electrodes are formed at predetermined portions, a transparent electrode overlapped with the storage electrode and formed over the transmission region of the first insulating layer, and a second insulating layer formed over the reflection region of the substrate and having a contact hole for exposing a predetermined portion of the transparent electrode.

Abstract: A liquid crystal display (LCD) device includes a control chip arranged on a print circuit board (PCB); a sampling switch array arranged on an LCD panel for applying video signals from the control chip to data lines of the LCD panel; and a switch controller for controlling the sampling switch array in accordance with control signals and the video signal applied from the control chip.

Abstract: A transflective liquid crystal display device including: first and second transparent substrates facing each other with a reflective portion and a transmissive portion; gate and data lines over the first transparent substrate perpendicularly crossing each other and defining pixel regions; a thin film transistor connected to the gate and data lines in the pixel region; an insulator in the thin film transistor on the first substrate covering the gate line; a passivation layer in the reflection portion on the insulator and on the thin film transistor; a pixel electrode in the reflective and transmissive portions, wherein the pixel electrode contacts both the passivation layer in the reflective potion and the insulator in the transmissive portion; a reflector on the pixel electrode in the reflective portion; color filters on a rear surface of the second transparent substrate, the color filters having through holes; column spacers formed between the reflector and the color filters, each column spacer corresponding

Abstract: A thin film transistor and its fabrication method. The transistor includes a buffer layer on a substrate, and a poly-crystalline semiconductor layer on the buffer layer. The poly-crystalline semiconductor layer includes a channel layer, offset regions along sides of the channel layer, sequential doping regions along sides of the offset regions, and source and drain regions. The doping concentration is sequentially changed in the sequential doping region. A sloped gate insulation layer is on the poly-crystalline semiconductor layer. A gate electrode having a main gate electrode and auxiliary gate electrodes is on the sloped insulation layer. An interlayer is over the gate electrode and source and drain electrodes are formed in contact with the source and drain regions and on the interlayer. The poly-crystalline semiconductor layer is formed by ion doping a poly-crystalline semiconductor layer through the gate insulation layer while using the gate electrode as a mask.

Abstract: A thin film transistor and its fabrication method. The transistor includes a buffer layer on a substrate, and a poly-crystalline semiconductor layer on the buffer layer. The poly-crystalline semiconductor layer includes a channel layer, offset regions along sides of the channel layer, sequential doping regions along sides of the offset regions, and source and drain regions. The doping concentration is sequentially changed in the sequential doping region. A sloped gate insulation layer is on the poly-crystalline semiconductor layer. A gate electrode having a main gate electrode and auxiliary gate electrodes is on the sloped insulation layer. An interlayer is over the gate electrode and source and drain electrodes are formed in contact with the source and drain regions and on the interlayer. The poly-crystalline semiconductor layer is formed by ion doping a poly-crystalline semiconductor layer through the gate insulation layer while using the gate electrode as a mask.

Abstract: The present invention relates to a static electricity prevention type liquid crystal display panel for preventing static electricity flowing in through a pad part. A static electricity prevention type liquid crystal display panel according to an embodiment of the present invention includes a picture display part having a plurality of liquid crystal cells; a signal pad part applying a drive signal to be inputted to signal lines of the picture display part, and wherein the signal pad part includes a plurality of pads connected to the signal lines; and a static electricity prevention circuit having a thin film transistor with a floating gate for connecting the pad with a shorting bar by a static electricity flowing into the pad for the pad to form an equipotential with respect to the static electricity.

Abstract: A thin film transistor and its fabrication method. The transistor includes a buffer layer on a substrate, and a poly-crystalline semiconductor layer on the buffer layer. The poly-crystalline semiconductor layer includes a channel layer, offset regions along sides of the channel layer, sequential doping regions along sides of the offset regions, and source and drain regions. The doping concentration is sequentially changed in the sequential doping region. A sloped gate insulation layer is on the poly-crystalline semiconductor layer. A gate electrode having a main gate electrode and auxiliary gate electrodes is on the sloped insulation layer. An interlayer is over the gate electrode and source and drain electrodes are formed in contact with the source and drain regions and on the interlayer. The poly-crystalline semiconductor layer is formed by ion doping a poly-crystalline semiconductor layer through the gate insulation layer while using the gate electrode as a mask.