Patents by Inventor Han Wool Park
Han Wool Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935952Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.Type: GrantFiled: September 15, 2022Date of Patent: March 19, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Doo Jeon, Han-Wool Park, Se-Jin Park, No-Young Chung
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Publication number: 20230021228Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.Type: ApplicationFiled: September 15, 2022Publication date: January 19, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Doo JEON, Han-Wool PARK, Se-Jin PARK, No-Young CHUNG
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Patent number: 11469325Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.Type: GrantFiled: April 24, 2019Date of Patent: October 11, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Doo Jeon, Han-Wool Park, Se-Jin Park, No-Young Chung
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Patent number: 10991894Abstract: Disclosed are an organic semiconductor compound that exhibits chemical resistance and etch resistance while maintaining electrical characteristics and thus is applicable to an existing photolithography process, thereby increasing process efficiency, and an organic semiconductor device using the same.Type: GrantFiled: November 15, 2018Date of Patent: April 27, 2021Assignees: FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITYInventors: Do Hwan Kim, Hojin Lee, Han Wool Park, Keun-Yeong Choi, Moon Sung Kang, Haejung Hwang, Ji Hye Shin
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Publication number: 20200119181Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.Type: ApplicationFiled: April 24, 2019Publication date: April 16, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Doo JEON, Han-Wool Park, Se-Jin Park, No-Young Chung
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Patent number: 10529937Abstract: According to embodiments of the present invention, a method of manufacturing an organic semiconductor device includes forming a first organic semiconductor layer on a substrate, and forming a self-assembled monolayer by providing a self-assembly precursor onto the first organic semiconductor layer. The first organic semiconductor layer has a reactive group on a top surface of the first organic semiconductor layer. The forming of the self-assembled monolayer includes forming a chemical bond between the self-assembly precursor and the reactive group of the first organic semiconductor layer.Type: GrantFiled: June 26, 2017Date of Patent: January 7, 2020Assignees: FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION, IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Do Hwan Kim, Moon Sung Kang, Haejung Hwang, Han Wool Park, Ji Hye Shin
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Publication number: 20190157573Abstract: Disclosed are an organic semiconductor compound that exhibits chemical resistance and etch resistance while maintaining electrical characteristics and thus is applicable to an existing photolithography process, thereby increasing process efficiency, and an organic semiconductor device using the same.Type: ApplicationFiled: November 15, 2018Publication date: May 23, 2019Applicants: FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERA TION, Industry-University Cooperation Foundation Hanyang UniversityInventors: Do Hwan KIM, Hojin LEE, Han Wool PARK, Keun-Yeong CHOI, Moon Sung KANG, Haejung HWANG, Ji Hye SHIN
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Patent number: 10164190Abstract: An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.Type: GrantFiled: January 4, 2016Date of Patent: December 25, 2018Assignees: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK, Industry-University Cooperation Foundation Hanyang UniversityInventors: Do Hwan Kim, Hojin Lee, Han Wool Park, Keun-Yeong Choi
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Publication number: 20180315938Abstract: According to embodiments of the present invention, a method of manufacturing an organic semiconductor device includes forming a first organic semiconductor layer on a substrate, and forming a self-assembled monolayer by providing a self-assembly precursor onto the first organic semiconductor layer. The first organic semiconductor layer has a reactive group on a top surface of the first organic semiconductor layer. The forming of the self-assembled monolayer includes forming a chemical bond between the self-assembly precursor and the reactive group of the first organic semiconductor layer.Type: ApplicationFiled: June 26, 2017Publication date: November 1, 2018Applicant: Foundation of Soongsil University-Industry CooperationInventors: Do Hwan KIM, Moon Sung KANG, Haejung HWANG, Han Wool PARK, Ji Hye SHIN
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Publication number: 20160276590Abstract: An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.Type: ApplicationFiled: January 4, 2016Publication date: September 22, 2016Inventors: Do Hwan Kim, Hojin Lee, Han Wool Park, Keun-Yeong Choi