Abstract: Disclosed is a method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus for maintaining a constant amount of molten silicon in the preliminary crucible by measuring the height of the molten silicon in the preliminary crucible.

Abstract: Disclosed is a high-temperature endoscope of an ingot growth apparatus in which impurity deposition is prevented by having a structure that increases a flow rate of an inert gas for preventing impurities from being deposited. A high-temperature endoscope preventing impurities of an ingot growth apparatus from being deposited, according to one embodiment of the present invention, may comprise: a frame extending to the inside of a chamber of the ingot growth apparatus and having a gas discharge port provided at an end portion thereof through which an inert gas is discharged; a lens installed at the center of the end portion of the frame and protected by the inert gas discharged from the gas discharge port; and a guide tube installed on an outer surface of the frame and having a guide portion extending from the end portion of the frame so as to guide the inert gas to prevent impurities from being deposited on the lens by increasing a flow rate of the inert gas.

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.

Abstract: The present invention relates to a premelter for pre-melting silicon before supplying to a main crucible capable of accurately measuring an input amount of molten silicon input into an ingot growth crucible, thereby effectively controlling the input amount, and a method for controlling the same. According to an embodiment of the present invention, disclosed is a premelter for pre-melting silicon before supplying to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible in which an ingot is grown after heating the silicon material in a solid state to become silicon in a molten state; a preliminary crucible moving module configured to tilt the preliminary crucible to one of a first position in which the preliminary crucible contains the solid silicon material or the molten silicon or a second position where the molten silicon in the preliminary crucible flows into the main crucible; and a control unit for controlling the preliminary crucible moving module.

Abstract: An energy-saving ingot growing device is disclosed. The ingot growing device according to the present invention comprises: a chamber having provided therein a crucible heated by a heat source in order to melt silicon; a side surface insulating material provided inside the chamber so as to insulate the side surface of the crucible; and an observation part provided to penetrate the chamber and the side surface insulating material so that the inside of the crucible can be observed.

Abstract: The present invention relates to a continuous ingot growing apparatus, and more specifically, to a continuous ingot growing apparatus which melts a solid silicon material supplied to a preliminary crucible to supply the solid silicon material to a main crucible and which can adjust a supply amount of molten silicon while blocking floating matter floating on top of the molten silicon so as not to be supplied.