Abstract: A semiconductor memory device includes a stack of alternating insulating layers and first conductive layers disposed over a substrate; a plurality of memory cell strings penetrating the stack over the substrate, each memory cell string comprising a central portion extending through the stack, a semiconductor layer surrounding the central portion, and a ferroelectric layer surrounding the semiconductor layer, and the central portion comprising a channel isolation structure and a second conductive layer and a third conductive layer at two sides of the channel isolation structure; and a plurality of cell isolation structures penetrating the conductive layers and the insulating layers over the substrate and disposed between two memory cell strings, each cell isolation structure comprising a top portion and a bottom portion adjoined to the top portion and different from the top portion.

Abstract: A memory system comprising a memory device including a plurality of memory cells coupled between a plurality of word lines and a plurality of bit lines and a plurality of latches coupled to the bit lines, and configured to program input data stored in the latches into memory cells of a selected word line during a program operation, and output, as information data, at least one or more data among first data stored in the latches and second data stored in the memory cells of the selected word line during a program suspend operation for suspending the program operation, and a controller configured to repair the input data by performing a set logic operation on the information data from the memory device, and apply the set logic operation whose type is different according to an execution moment of the program suspend operation.

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

Abstract: A signal sensing device includes a body and two signal sensing elements disposed in the body. An insulating layer is sandwiched between the two signal sensing elements. Each of the two signal sensing elements incudes a signal transmission section and a signal sensing section in electrical connection with the signal transmission section. The signal transmission sections are planar antennae parallel to each other and each having an antenna shape of meander-line type. The antenna shape of each transmission section has a vertical projection on a plane parallel to each signal transmission section. The vertical projections of the antenna shapes do not overlap completely. When a portion of the body forms a surrounding portion which surrounds a to-be-sensed target, a portion or an entirety of each signal sensing section is located on the surrounding portion.

Abstract: A signal sensing device includes a signal amplifying structure to amplify the strength of the measured signal. The signal sensing device includes a body, a signal sensing element, and a signal amplifying portion. The signal sensing element is disposed in the body and includes a signal transmission section and a signal sensing section in electrical connection with the signal transmission section. The signal amplifying portion includes a plurality of protruding structures protruding outward from the body. Each of the plurality of protruding structures is cylindrical and has a diameter of 250-400 ?m and a height of 40-75 ?m. When a portion of the body forms a surrounding portion surrounding a to-be-sensed target, a portion or an entirety of the signal sensing section is located on the surrounding portion, and the signal amplifying portion is partially or entirely in contact with the to-be-sensed target.

Abstract: A thermal-power power electronic direct-hung energy-storage plant backup power system includes a thermal-power grid connection startup/standby unit, a power electronic energy-storage switching unit and a thermal-power plant unit. The thermal-power grid connection startup/standby unit is connected to the power electronic energy-storage switching unit and the thermal-power plant unit, respectively. The power electronic energy-storage switching unit is connected to the thermal-power plant unit.

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract: A semiconductor device is presented. The semiconductor device includes a lower semiconductor die, a stack of upper semiconductor dies disposed over the lower semiconductor die, a top semiconductor die disposed over the stack of upper semiconductor dies, a non-conductive film material disposed between adjacent semiconductor dies of the lower semiconductor die and the stack of upper semiconductor dies, and a mold compound material disposed between the top semiconductor die and the stack of upper semiconductor dies, and on sidewalls of the stack of upper semiconductor dies and the top semiconductor die.

Abstract: A light emitting device includes a substrate, a plurality of light emitting parts disposed on the substrate, an organic layer disposed on at least one of the plurality of light emitting parts, a circuit layer disposed on the substrate, and a first layer disposed between the organic layer and the circuit layer.

Abstract: The present disclosure describes a PTPN2/PTP1B degrader compounds having the structure of Formula (I), that are useful for treating PTPN2/PTP1B-mediated disorders or conditions,

Abstract: The present disclosure provides an information display method and apparatus, a medium, and an electronic device. The method includes: acquiring, in response to a search operation, a search result corresponding to the search operation, the search result includes a homepage of a target account that is associated with a search term corresponding to the search operation; displaying the homepage in a visual interface synchronously, and displaying an Easter egg superimposed on a picture that is displayed in a specified region of the homepage.

Abstract: The present disclosure generally relates to novel multiple target inhibitor of tyrosine kinases (TKs) which can suppress angiogenesis, metastasis, oncogenesis, and/or immune regulation activities by inhibiting TKs and have very potent immunomodulatory activity. The present disclosure also relates to a method of using the tyrosine kinase inhibitors, alone or in combination with HDAC inhibitor, for the treatment of cancers, in particular in cancer immunotherapy, by regulating the tumor microenvironment, including reducing tumor hypoxia, reducing lactic acid accumulation, activating CTL, inhibiting the number and activity of immunosuppressive cells, finally obtaining superior anti-cancer benefits and/or producing lasting immune memory.

Abstract: There is provided a capacitive touch control system adapted to detect low frequency signals, including a touch panel and an analog front end. The analog front end includes a frequency booster, which boosts a low frequency signal outputted by the touch panel using a variable reference frequency corresponding to different function symbols of the low frequency signal such that resistance of a resistor of an amplifier in the analog front end needs not to be increased thereby reducing the manufacturing cost and a leakage voltage drop on the resistor.

Abstract: A mechanical keyboard is provided, which includes a plurality of mechanical keys, a circuit board, a plurality of first magnetic elements, a lower casing and a plurality of second magnetic elements. The mechanical keyboard has a key region and an edge region surrounding the key region. The mechanical keys are located in the key region. The circuit board is disposed beneath the mechanical keys. The first magnetic elements are disposed beneath the circuit board and distributed in the key region. The lower casing is disposed beneath the mechanical keys, the circuit board and the first magnetic elements. The second magnetic elements are disposed over the lower casing, in which the second magnetic elements respectively correspond to the first magnetic elements and respectively repel the first magnetic elements.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: The present disclosure relates to a method of preventing or treating brain cancers or brain metastases with mesoporous silica nanoparticles (MSNs) loaded with taxane-based chemotherapeutic drugs, in particular paclitaxel (PTX), cabazitaxel (CTX) or docetaxel (DTX), and the MSNs loaded with PTX, CTX or DTX.

Abstract: A high-electron mobility transistor includes a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate includes an active region. The gate electrode is disposed on the substrate. The drain electrode is disposed at one side of the gate electrode. The source electrode is disposed at another side of the gate electrode. The first field plate is electrically connected with the source electrode and extends from the source electrode toward the drain electrode. An overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.

Abstract: The present disclosure belongs to the technical field of heat exchangers, and provides a heat exchanger based on a Gyroid/Diamond (GD-type) hybrid minimal surface-based disturbance structure. The heat exchanger includes a core, headers, and flanges. The core includes a cold fluid channel and a hot fluid channel, the cold fluid channel and the hot fluid channel are separated by a parting sheet. An inlet and an outlet of the cold fluid channel are separated from an inlet and an outlet of the hot fluid channel by sealing bars. A GD-type hybrid minimal surface-based disturbance structure is inserted into the hot fluid channel. A cold fluid and a hot fluid are distributed in a cross-flow manner.

Abstract: The present disclosure relates to a field of hollow silica nanospheres. Particularly, the present disclosure relates to silica nanoparticles as adjuvant to induce or enhance immune response or as carrier to deliver antigen to a body.

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.