Abstract: A display device that includes a light emitting element layer disposed on a substrate, a thin-film encapsulation layer disposed on the light emitting element layer, a wavelength conversion layer disposed on the thin-film encapsulation layer and including a bank which defines light emitting areas and a non-light emitting area, a dam structure disposed on the wavelength conversion layer and overlapping at least one of the light emitting areas, a filling layer disposed on the wavelength conversion layer and disposed between portions of the dam structure, a color filter layer disposed on the dam structure, and a counter substrate disposed on the color filter layer, wherein the filling layer overlaps ones of the light emitting areas not overlapping the dam structure.

Abstract: The present disclosure provides a glycoengineered SARS-CoV-2 spike protein which is capable of eliciting an enhanced immune response relative to a native spike protein of SARS-CoV-2 and its variants. The glycoengineered spike protein exposes the glycosylation sites and at the same time preserves the tertiary structure of the spike protein. The present disclosure therefore provides improved immunogens, vaccines, and methods for better prevention and treatment of the emerging coronavirus infections.

Abstract: A power generating device and a power supplying method thereof are provided. The power generating device includes a battery set, a charge storage device, a charger and a voltage converter. The battery set has microbial fuel cell and/or solar battery, and is configured to generate a supply voltage. The charger generates a charging voltage according to the supply voltage, and provides the charging voltage through a first resistor to charge the charge storage device. The voltage converter converts a storage voltage provided by the charge storage device to generate a driving voltage, and provides the driving voltage to drive a load.

Abstract: Embodiments of the present disclosure provide a semiconductor package. In one embodiment, the semiconductor package includes a first integrated circuit die having a first circuit design, and the first integrated circuit die comprises a first device layer and a first interconnect structure. The semiconductor package also includes a second integrated circuit die having a second circuit design different than the first circuit design, and the second integrated circuit die comprises a second device layer and a second interconnect structure having a first side in contact with the first device layer and a second side in direct contact with the first interconnect structure of the first integrated circuit die. The semiconductor package further includes a substrate having a first side bonded to the first interconnect structure, wherein the substrate has an opening extending through entire thickness of the substrate, and the second integrated circuit die is surrounded by a filling material.

Abstract: A plant microbial fuel cell includes a planting container, a plant, a cathode and an anode. The planting container has a culture medium therein, and a microbial population is in the culture medium. The plant is grown in the culture medium in the planting container. The cathode is disposed on a surface of the culture medium, and the anode is arranged in the culture medium close to roots of the plant. The anode includes a porous carbon material prepared from coffee grounds, and thus the overall cost of the plant microbial fuel cell may be greatly reduced, and the porous carbon material is easy to process and has high biocompatibility.

Abstract: An interconnect structure includes a conductive feature embedded in a dielectric feature. The conductive feature has a first horizontal portion and a first vertical portion. The first horizontal portion extends in a horizontal direction to terminate at two edge surfaces. The first horizontal portion includes graphene layers stacked on each other, and an intercalation material interposed among the graphene layers. The intercalation material includes a first atom dopant including one of a group 1 metal, a group 2 metal, a group 3 metal, a lanthanide series metal, an actinide series metal, and combinations thereof. The first vertical portion extends in a vertical direction and is in contact with one of the two edge surfaces of the first horizontal portion. The first vertical portion is made of a first electrically conductive metal material.

Abstract: A semiconductor structure including a first dielectric layer and a conductive pattern is provided. The conductive pattern is disposed in the first dielectric layer, wherein the conductive pattern comprises an alloy layer and a first conductive layer, the alloy layer surrounds sidewalls and a bottom surface of the first conductive layer, a material of the alloy layer comprises an alloy of at least two metals, and at least one of the at least two metals relative to the rest of the at least two metals tends to be reacted with a dielectric material of the first dielectric layer.

Abstract: A semiconductor structure according to the present disclosure includes a substrate, a first base fin and a second base fin arising from the substrate, an isolation structure disposed between the first base fin and the second base fin, first channel members disposed over the first base fin, second channel members disposed over the second base fin, a region isolation feature extending into the substrate, a first gate structure wrapping around each of the first channel members, second gate structure wrapping around each of the second channel members, a first gate cut feature extending through the first gate structure and into the isolation feature, and a second gate cut feature extending though the second gate structure and into the isolation feature. Each of the first gate cut feature and the second gate cut feature are spaced apart from the region isolation feature.

Abstract: A semiconductor device and method of fabricating the same, the semiconductor device includes a substrate, a metal gate structure, at least one dummy body, two source/drain regions, and a dielectric layer. The metal gate structure is disposed on the substrate. The at least one dummy body is disposed within the metal gate structure. The source/drain regions are disposed at two sides of the metal gate structure respectively in the substrate. The dielectric layer is disposed on the substrate, around the metal gate structure.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.

Abstract: A semiconductor structure includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and including a conductive interconnect; and a cap layer disposed on the interconnect structure. The cap layer includes a cap portion disposed on the conductive interconnect. The cap portion includes a plurality of two-dimensional material sheets stacked on each other and has a lower surface proximate to the conductive interconnect. The lower surface of the cap portion is formed with a plurality of dangling bonds such that the cap portion is adhered to the conductive interconnect through the dangling bonds.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A solid electrolyte with high-entropy garnet-type structure includes a high-entropy garnet-type structure oxide represented by following formula (1): LiaLa3ZrbTacM1dM2eM3fO12 ??(1) In the formula (1), M1, M2, and M3 are respectively W, Sc, Sn, Nb, Y, Si, Sb, Te, Ti, Mo, Mg, or Nd, b+c+d+e+f=2, 5<a<8, 0.01<b<0.6, 0.01<c<0.6, 0.01<d<0.6, 0.01<e<0.6, and 0?f<0.6. A solid electrolyte of an all solid-state lithium-ion battery includes the solid electrolyte with high-entropy garnet-type structure.

Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that specifically binds to a spike protein of SARS-CoV-2. The present disclosure also relates to a pharmaceutical composition, a method for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.

Abstract: A manufacturing method of a semiconductor device includes: forming a first dielectric layer on inductor traces, openings of the first dielectric layer exposing the inductor traces; disposing a buffer material on the first dielectric layer and the inductor traces in the openings; sequentially disposing an etch stop material and a ferromagnetic material on the buffer material; removing the ferromagnetic material from over the openings to form a core material layer covering a first area; removing the etch stop and buffer materials from the openings to form an etch stop layer and a buffer layer, where the etch stop and buffer layers cover a second area, the first area is smaller than and within the second area; forming a second dielectric layer on the first dielectric layer to embed the buffer, etch stop, and core material layers; and forming inductor vias extending through the first and second dielectric layers.

Abstract: A contact lens and its manufacturing method are provided. The contact lens includes a lens and a hydrophilic coating that is attached to a surface of the lens by hydrogen bonding, ionic bonding, or a combination thereof. The hydrophilic coating includes polyacrylic acid and carbohydrate. Another contact lens includes a lens, a first hydrophilic coating, and a second hydrophilic coating. The first hydrophilic coating is attached to a surface of the lens by hydrogen bonding, ionic bonding, or a combination thereof and includes polyacrylic acid. The second hydrophilic coating is disposed on the first hydrophilic coating. The second hydrophilic coating includes polyvinylpyrrolidone, poloxamine, poloxamer, methylcellulose, hydroxypropyl methylcellulose, carboxymethyl cellulose, ascorbic acid, poly(2-methacryloyloxyethyl phosphorylcholine), hyaluronic acid, alginic acid, polyglutamic acid, carbohydrate, or combinations thereof. The carbohydrate includes monosaccharide, disaccharide, or a combination thereof.

Abstract: An inductor includes a core and a conductive spiral wound around the core. The core includes a buffer layer, an etch stop layer, and a core material layer sequentially stacked. The core material layer includes a ferromagnetic material. A total area of a vertical projection of the core material layer is smaller than an area occupied by the etch stop layer. The vertical projection of the core material layer falls entirely on the etch stop layer. The etch stop layer horizontally protrudes with respect to the core material layer.

Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that specifically binds to a spike protein of SARS-COV-2. The present disclosure also relates to a pharmaceutical composition, a method for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.