Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: The present invention provides a heat spreading tape including at least one heat spreading layer adapted for heat dissipation and at least one heat insulating layer adhesively attached to the heat spreading layer. Void regions are formed in the at least one heat insulating layer and are adapted for acting as heat transfer barriers in a direction perpendicular to the major surfaces of the heat spreading tape, i.e. the thickness tape.