Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

Abstract: One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.

Abstract: One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

Abstract: A method for fabricating a semiconductor device includes: forming a plurality of fins from a substrate, the fins including nFET fins and pFET fins; forming a trench between the nFET fins and pFET fins; forming a silicon nitride (SiN) layer over the trench, the nFET fins and the pFET fins to create an intermediate device; and depositing with a high density plasma (HDP) process an HDP layer of silicon dioxide (SiO2) over the trench, the nFET fins and the pFET fins. The HDP process includes loading the intermediate device into a deposition chamber and introducing hydrogen (H2) gas and silane (SiH4) into the deposition chamber, wherein the H2 gas is not introduced into the deposition chamber before the SiH4 is introduced into the deposition chamber.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.

Abstract: Provided are an electromagnetic-field-shielded heating wire used in bedding and an apparatus for driving the same. The heating wire includes a core wire which is formed of a copper or enamel wire, a first insulating inner coating which is coated on an outer surface of the core wire to encompass an outer circumferential surface of the core wire, a heater wire which is wound on an outer circumferential surface of the first insulating inner coating, a second insulating inner coating which is coated on an outer surface of the first insulating inner coating to encompass the outer circumferential surface of the first insulating inner coating including the heater wire, a ground wire which is formed on an outer circumferential surface of the second insulating inner coating, and a metallic thin film which is coated on the outer circumferential surface of the second insulating inner coating including the ground wire.