Patents by Inventor Han-Youl Ryu

Han-Youl Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120248404
    Abstract: The present disclosure relates to a gallium-nitride light emitting diode and a manufacturing method thereof and the gallium-nitride light emitting diode includes an n-type nitride semiconductor layer formed on a substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type doped intermediate layer formed on the active layer; and a p-type nitride semiconductor layer formed on the intermediate layer.
    Type: Application
    Filed: February 28, 2012
    Publication date: October 4, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jong Moo LEE, Han Youl RYU, Eun Soo NAM, Sung Bum BAE
  • Publication number: 20120087673
    Abstract: Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
    Type: Application
    Filed: December 12, 2011
    Publication date: April 12, 2012
    Inventors: Han-youl Ryu, Sung-dong Suh, Kyoung-ho Ha, Seong-gu Kim
  • Patent number: 8120044
    Abstract: A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-haeng Cho, Kyoung-ho Ha, Han-youl Ryu, Sung-dong Suh, Seong-gu Kim, Bok-ki Min
  • Patent number: 8098994
    Abstract: Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: January 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-youl Ryu, Sung-dong Suh, Kyoung-ho Ha, Seong-gu Kim
  • Publication number: 20110116525
    Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
    Type: Application
    Filed: January 21, 2011
    Publication date: May 19, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Han-youl Ryu, Kyoung-ho Ha
  • Patent number: 7899103
    Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: March 1, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Han-youl Ryu, Kyoung-ho Ha
  • Patent number: 7826505
    Abstract: A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<x<1) and GaN layers, and the composition ratio of aluminum of the AlxGa(1-x)N layers decreases at a predetermined rate away from the active layer.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: November 2, 2010
    Assignee: Samsung LED Co., Ltd.
    Inventors: Joong-kon Son, Kyoung-ho Ha, Han-youl Ryu
  • Patent number: 7812338
    Abstract: A semiconductor light emitting device may include an n-type contact layer on a substrate. An active layer may be on the n-type contact layer and/or include two or more quantum well layers and two or more barrier layers. A p-type contact layer may be on the active layer. Energy band gaps of the quantum well layers may be larger as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, thicknesses of the quantum well layers may be smaller as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, and/or energy band gaps of the barrier layers may be larger as the barrier layers are closer to the n-type contact layer from the p-type contact layer.
    Type: Grant
    Filed: July 6, 2007
    Date of Patent: October 12, 2010
    Assignee: Samsung Led Co., Ltd.
    Inventor: Han-youl Ryu
  • Patent number: 7724795
    Abstract: Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: May 25, 2010
    Assignee: Samsung LED Co., Ltd.
    Inventors: Joong-kon Son, Han-youl Ryu, Tan Sakong, Ho-sun Paek, Sung-nam Lee
  • Patent number: 7693200
    Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: April 6, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-hye Chae, Jong-in Shim, Kyoung-ho Ha, Kyu-sang Kim, Han-youl Ryu
  • Patent number: 7682852
    Abstract: Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
    Type: Grant
    Filed: August 9, 2007
    Date of Patent: March 23, 2010
    Assignee: Samsung Led Co., Ltd.
    Inventors: Han-youl Ryu, Kyoung-ho Ha, Youn-joon Sung
  • Patent number: 7656926
    Abstract: Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: February 2, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-youl Ryu, Kyoung-ho Ha
  • Patent number: 7616674
    Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: November 10, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-youl Ryu, Ok-hyun Nam, Kyoung-ho Ha
  • Publication number: 20090175630
    Abstract: Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
    Type: Application
    Filed: June 16, 2008
    Publication date: July 9, 2009
    Inventors: Han-youl Ryu, Sung-dong Suh, Kyoung-ho Ha, Seong-gu Kim
  • Publication number: 20090175307
    Abstract: Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.
    Type: Application
    Filed: May 22, 2008
    Publication date: July 9, 2009
    Inventors: Han-youl Ryu, Kyoung-ho Ha
  • Publication number: 20090136235
    Abstract: Example embodiments provide a probe card having an optical transmitting unit and a memory tester having the probe card. The probe card may include a plurality of needles connected to test terminals formed in a memory, a plurality of first terminals connected to the needles, a plurality of second terminals connected to the outside and corresponding to the first terminals, and an optical transmitting unit. The optical transmitting unit may connect the first terminals and the second terminals.
    Type: Application
    Filed: May 7, 2008
    Publication date: May 28, 2009
    Inventors: Sung-dong Suh, Kyoung-ho Ha, Seong-gu Kim, Soo-haeng Cho, Bok-ki Min, Han-youl Ryu
  • Patent number: 7535942
    Abstract: Provided is a semiconductor laser device, a semiconductor laser device package including the semiconductor laser device and methods of manufacturing the same. A semiconductor laser device may include a light emission structure including a first clad layer, an active layer and a second clad layer sequentially deposited on a substrate, a submount to which the light emission structure bonded, and a light shield plate in the submount, wherein the light shield plate blocks an end of the substrate on a light emission face of the light emission structure and blocks light leaked through the end of the substrate.
    Type: Grant
    Filed: October 18, 2007
    Date of Patent: May 19, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-youl Ryu, Hyung-kun Kim
  • Publication number: 20090114927
    Abstract: A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers.
    Type: Application
    Filed: April 14, 2008
    Publication date: May 7, 2009
    Inventors: Soo-haeng Cho, Kyoung-ho Ha, Han-youl Ryu, Sung-dong Suh, Seong-gu Kim, Bok-ki Min
  • Publication number: 20080123696
    Abstract: Provided is a semiconductor laser device comprising a substrate, a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate, and a scattering portion formed on the bottom surface of the substrate in order to scatter light. As such, the semiconductor laser device may emit higher quality laser light.
    Type: Application
    Filed: September 13, 2007
    Publication date: May 29, 2008
    Inventors: Han-youl Ryu, Join-in Shim, Youn-joon Sung
  • Publication number: 20080102546
    Abstract: Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
    Type: Application
    Filed: August 9, 2007
    Publication date: May 1, 2008
    Inventors: Han-youl Ryu, Kyoung-ho Ha, Youn-joon Sung