Abstract: Provided are a nanowire sensor and a method of manufacturing the same. The nanowire sensor includes: a sensing target system comprising a target element to be detected; two electrodes separated from each other contained in the sensing target system; vanadium oxide (V2O5) nanowires incorporated in the sensing target system and attached to the two electrodes; and a measuring unit for measuring a change in resistance of the nanowires as the nanowires detect the target element.

Abstract: Provided is a tri-gated molecular field effect transistor (FET) and a method of fabricating the same. The tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.