Patents by Inventor Han-Yu Chen
Han-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240086609Abstract: A system including a processor configured to perform generating a plurality of different layout blocks; selecting, among the plurality of layout blocks, layout blocks corresponding to a plurality of blocks in a floorplan of a circuit; combining the selected layout blocks in accordance with the floorplan into a layout of the circuit; and storing the layout of the circuit in a cell library or using the layout of the circuit to generate a layout for an integrated circuit (IC) containing the circuit. Each of the plurality of layout blocks satisfies predetermined design rules and includes at least one of a plurality of different first block options associated with a first layout feature, and at least one of a plurality of different second block options associated with a second layout feature different from the first layout feature.Type: ApplicationFiled: February 16, 2023Publication date: March 14, 2024Inventors: Cheng-YU LIN, Chia Chun WU, Han-Chung CHANG, Chih-Liang CHEN
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Publication number: 20240079558Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.Type: ApplicationFiled: June 21, 2023Publication date: March 7, 2024Inventors: Chao-Nan Wei, Feng-Yen Tsai, Ya-Hui Wang, Han-Yu Chen
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Publication number: 20240008373Abstract: In various embodiments, an improved structure for a PCM device is provided. The improved structure is configured to help prevent heat dissipation. In one example, the PCM device is an PCM RF Switch, which has a substrate, a heater, a dielectric/insulator layer, oxidation layers, electrodes, a PCM region, and/or any other components. The oxidation layers are configured to help prevent heat dissipation from the heater.Type: ApplicationFiled: June 29, 2022Publication date: January 4, 2024Inventors: Chang-Chih Huang, Han-Yu Chen, Yu-Sheng Chen, Kuo-Chyuan Tzeng
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Publication number: 20230397511Abstract: A dielectric isolation layer having a top surface may be formed over a substrate. A heater line, a phase change material (PCM) line, and an in-process conductive barrier plate may be formed over the dielectric isolation layer. An electrode material layer may be formed over the in-process conductive barrier plate. The electrode material layer and the in-process conductive barrier plate may be patterned such that patterned portions of the in-process conductive barrier plate include a first conductive barrier plate contacting a first area of a top surface of the PCM line, and a second conductive barrier plate contacting a second area of the top surface of the PCM line, and patterned portions of the electrode material layer include a first electrode contacting the first conductive barrier plate and a second electrode contacting the second conductive barrier plate.Type: ApplicationFiled: June 1, 2022Publication date: December 7, 2023Inventors: Harry-Hak-Lay Chuang, Chia Wen Liang, Chang-Chih Huang, Han-Yu Chen, Kuo-Chyuan Tzeng, Tsung-Hao Yeh
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Patent number: 11832448Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a semiconductor substrate having sidewalls that define a recess within an upper surface of the semiconductor substrate. A plurality of upper electrode segments are arranged over the semiconductor substrate and are vertically separated from the upper surface of the semiconductor substrate by a first dielectric layer. A lower electrode segment is arranged directly between the sidewalls of the semiconductor substrate and directly between adjacent ones of the plurality of upper electrode segments. A second dielectric layer is arranged directly between the sidewalls of the semiconductor substrate and the lower electrode segment and also directly between the plurality of upper electrode segments and the lower electrode segment.Type: GrantFiled: July 15, 2021Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Patent number: 11735635Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: GrantFiled: July 19, 2021Date of Patent: August 22, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Han Tsao, Chih-Ming Chen, Han-Yu Chen, Szu-Yu Wang, Lan-Lin Chao, Cheng-Yuan Tsai
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Publication number: 20210343849Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: ApplicationFiled: July 19, 2021Publication date: November 4, 2021Inventors: Chun-Han Tsao, Chih-Ming Chen, Han-Yu Chen, Szu-Yu Wang, Lan-Lin Chao, Cheng-Yuan Tsai
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Publication number: 20210343738Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a semiconductor substrate having sidewalls that define a recess within an upper surface of the semiconductor substrate. A plurality of upper electrode segments are arranged over the semiconductor substrate and are vertically separated from the upper surface of the semiconductor substrate by a first dielectric layer. A lower electrode segment is arranged directly between the sidewalls of the semiconductor substrate and directly between adjacent ones of the plurality of upper electrode segments. A second dielectric layer is arranged directly between the sidewalls of the semiconductor substrate and the lower electrode segment and also directly between the plurality of upper electrode segments and the lower electrode segment.Type: ApplicationFiled: July 15, 2021Publication date: November 4, 2021Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Patent number: 11088159Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of upper electrodes disposed over a substrate and a lower electrode disposed between the plurality of upper electrodes. A charge storage layer continuously extends from along a first side of the lower electrode to along a second side of the lower electrode opposing the first side. The charge storage layer separates the lower electrode from the plurality of upper electrodes and the substrate. A silicide is disposed over the lower electrode and the plurality of upper electrodes. The silicide has sidewalls that are laterally separated by a distance directly overlying a top of the charge storage layer.Type: GrantFiled: January 2, 2020Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Patent number: 11069785Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: GrantFiled: April 26, 2019Date of Patent: July 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Chun-Han Tsao, Chih-Ming Chen, Han-Yu Chen, Szu-Yu Wang, Lan-Lin Chao, Cheng-Yuan Tsai
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Publication number: 20200144280Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of upper electrodes disposed over a substrate and a lower electrode disposed between the plurality of upper electrodes. A charge storage layer continuously extends from along a first side of the lower electrode to along a second side of the lower electrode opposing the first side. The charge storage layer separates the lower electrode from the plurality of upper electrodes and the substrate. A silicide is disposed over the lower electrode and the plurality of upper electrodes. The silicide has sidewalls that are laterally separated by a distance directly overlying a top of the charge storage layer.Type: ApplicationFiled: January 2, 2020Publication date: May 7, 2020Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Patent number: 10535676Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of upper electrodes separated from a semiconductor substrate by a first dielectric layer. A lower electrode is laterally disposed between the plurality of upper electrodes and between sidewalls of the semiconductor substrate. A second dielectric layer lines opposing sidewalls and a lower surface of the lower electrode. The second dielectric layer laterally separates the lower electrode from the plurality of upper electrodes and from the sidewalls of the semiconductor substrate.Type: GrantFiled: May 16, 2019Date of Patent: January 14, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Publication number: 20190273091Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of upper electrodes separated from a semiconductor substrate by a first dielectric layer. A lower electrode is laterally disposed between the plurality of upper electrodes and between sidewalls of the semiconductor substrate. A second dielectric layer lines opposing sidewalls and a lower surface of the lower electrode. The second dielectric layer laterally separates the lower electrode from the plurality of upper electrodes and from the sidewalls of the semiconductor substrate.Type: ApplicationFiled: May 16, 2019Publication date: September 5, 2019Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Publication number: 20190259848Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: ApplicationFiled: April 26, 2019Publication date: August 22, 2019Inventors: Chun-Han TSAO, Chi-Ming CHEN, Han-Yu CHEN, Szu-Yu WANG, Lan-Lin CHAO, Cheng-Yuan TSAI
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Patent number: 10297608Abstract: The present disclosure relates to an integrated chip having an inter-digitated capacitor, and an associated method of formation. In some embodiments, the integrated chip has a plurality of upper electrodes separated from a substrate by a first dielectric layer. A plurality of lower electrodes vertically extend from between the plurality of upper electrodes to locations embedded within the substrate. A charge trapping dielectric layer is arranged between the substrate and the plurality of lower electrodes and between the plurality of upper electrodes and the plurality of lower electrodes. The charge trapping dielectric layer has a plurality of discrete segments respectively lining opposing sidewalls and a lower surface of one of the plurality of lower electrodes.Type: GrantFiled: April 7, 2017Date of Patent: May 21, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Patent number: 10276678Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: GrantFiled: September 1, 2017Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Chun-Han Tsao, Chih-Ming Chen, Han-Yu Chen, Szu-Yu Wang, Lan-Lin Chao, Cheng-Yuan Tsai
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Publication number: 20170365514Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: ApplicationFiled: September 1, 2017Publication date: December 21, 2017Inventors: Chun-Han TSAO, Chih-Ming CHEN, Han-Yu CHEN, Szu-Yu WANG, Lan-Lin CHAO, Cheng-Yuan TSAI
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Patent number: 9754827Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.Type: GrantFiled: April 29, 2016Date of Patent: September 5, 2017Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Chun-Han Tsao, Chih-Ming Chen, Han-Yu Chen, Szu-Yu Wang, Lan-Lin Chao, Cheng-Yuan Tsai
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Publication number: 20170213841Abstract: The present disclosure relates to an integrated chip having an inter-digitated capacitor, and an associated method of formation. In some embodiments, the integrated chip has a plurality of upper electrodes separated from a substrate by a first dielectric layer. A plurality of lower electrodes vertically extend from between the plurality of upper electrodes to locations embedded within the substrate. A charge trapping dielectric layer is arranged between the substrate and the plurality of lower electrodes and between the plurality of upper electrodes and the plurality of lower electrodes. The charge trapping dielectric layer has a plurality of discrete segments respectively lining opposing sidewalls and a lower surface of one of the plurality of lower electrodes.Type: ApplicationFiled: April 7, 2017Publication date: July 27, 2017Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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Patent number: 9691780Abstract: The present disclosure relates to an inter-digitated capacitor that can be formed along with split-gate flash memory cells and that provides for a high capacitance per unit area, and a method of formation. In some embodiments, the inter-digitated capacitor has a well region disposed within an upper surface of a semiconductor substrate. A plurality of trenches vertically extend from the upper surface of the semiconductor substrate to positions within the well region. Lower electrodes are arranged within the plurality of trenches. The lower electrodes are separated from the well region by a charge trapping dielectric layer arranged along inner-surfaces of the plurality of trenches. A plurality of upper electrodes are arranged over the semiconductor substrate at locations laterally separated from the lower electrodes by the charge trapping dielectric layer and vertically separated from the well region by a first dielectric layer.Type: GrantFiled: September 25, 2015Date of Patent: June 27, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen