Patents by Inventor HAN-ZHONG LIAO
HAN-ZHONG LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10586895Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesseType: GrantFiled: March 6, 2019Date of Patent: March 10, 2020Assignee: Epistar CorporationInventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Publication number: 20190207061Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesseType: ApplicationFiled: March 6, 2019Publication date: July 4, 2019Inventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Patent number: 10256371Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; one or a plurality of indentations, comprising a bottom part extending downward through the second semiconductor layer and the active layer to reach the first semiconductor layer and exposing the first semiconductor layer; a plurality of metal layers, comprising a first metal layer connecting to the first semiconductor layer through the bottom part, and a second metal layer deposited on the first metal layer; and an insulating layer formed between the first and the second metal layers, disposed on the indentation and covering the first metal layer, wherein the second metal layer comprises one or a plurality of recesses at a top surface thereof corresponding to the one or plurality of indentations.Type: GrantFiled: August 14, 2015Date of Patent: April 9, 2019Assignee: EPISTAR CORPORATIONInventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Publication number: 20150357519Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation comprising a bottom part extending downward to reach the first semiconductor layer and exposing the first semiconductor layer; a first metal layer disposed on the second semiconductor layer, connecting to the first semiconductor layer at the bottom part of the indention; and an first insulating layer deposited on the second semiconductor layer and between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer.Type: ApplicationFiled: August 14, 2015Publication date: December 10, 2015Inventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Patent number: 9130129Abstract: A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation.Type: GrantFiled: December 14, 2012Date of Patent: September 8, 2015Assignee: Formosa Epitaxy IncorporationInventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Patent number: 8658443Abstract: A method for manufacturing light emitting device is provided. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. A part of the phosphor layer over the protective layer is removed. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.Type: GrantFiled: October 15, 2010Date of Patent: February 25, 2014Assignee: Formosa Epitaxy IncorporationInventors: Wei-Kang Cheng, Yu-Chih Lin, Han-Zhong Liao, Yi-Sheng Ting, Shyi-Ming Pan
-
Publication number: 20120045857Abstract: A method for manufacturing light emitting device is revealed. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. That means to remove part of the phosphor layer over the protective layer and the protective layer. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.Type: ApplicationFiled: October 15, 2010Publication date: February 23, 2012Applicant: FORMOSA EPITAXY INCORPORATIONInventors: WEI-KANG CHENG, YU-CHIH LIN, HAN-ZHONG LIAO, YI-SHENG TING, SHYI-MING PAN