Patents by Inventor Han-Zong PAN

Han-Zong PAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11861928
    Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
    Type: Grant
    Filed: November 23, 2022
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: You-Cheng Jhang, Han-Zong Pan, Wei-Ding Wu, Jiu-Chun Weng, Hsin-Yu Chen, Cheng-San Chou, Chin-Min Lin
  • Publication number: 20230400699
    Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Application
    Filed: August 8, 2023
    Publication date: December 14, 2023
    Inventors: Hsin-Yu CHEN, Yen-Chiang LIU, June-Jie CHIOU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, LAVANYA SANAGAVARAPU, Han-Zong PAN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Hsi-Cheng HSU
  • Publication number: 20230401885
    Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 14, 2023
    Inventors: You-Cheng JHANG, Han-Zong PAN, Wei-Ding WU, Jiu-Chun WENG, Hsin-Yu CHEN, Cheng-San CHOU, Chin-Min LIN
  • Publication number: 20230384664
    Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 30, 2023
    Inventors: Kuo-Hao LEE, Hsi-Cheng HSU, Jui-Chun WENG, Han-Zong PAN, Hsin-Yu CHEN, You-Cheng JHANG
  • Publication number: 20230359056
    Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Application
    Filed: July 14, 2023
    Publication date: November 9, 2023
    Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, JI-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
  • Patent number: 11789360
    Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: October 17, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hao Lee, Hsi-Cheng Hsu, Jui-Chun Weng, Han-Zong Pan, Hsin-Yu Chen, You-Cheng Jhang
  • Publication number: 20230324787
    Abstract: A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.
    Type: Application
    Filed: June 15, 2023
    Publication date: October 12, 2023
    Inventors: Kuo-Hao LEE, You-Cheng JHANG, Han-Zong PAN, Jui-Chun WENG, Chiu-Hua CHUNG, Sheng-Yuan LIN, Hsin-Yu CHEN
  • Patent number: 11782284
    Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: October 10, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
  • Patent number: 11726342
    Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Grant
    Filed: August 4, 2022
    Date of Patent: August 15, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
  • Patent number: 11726401
    Abstract: A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: August 15, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hao Lee, You-Cheng Jhang, Han-Zong Pan, Jui-Chun Weng, Chiu-Hua Chung, Sheng-Yuan Lin, Hsin-Yu Chen
  • Publication number: 20230092567
    Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
    Type: Application
    Filed: November 23, 2022
    Publication date: March 23, 2023
    Inventors: You-Cheng JHANG, Han-Zong PAN, Wei-Ding WU, Jiu-Chun WENG, Hsin-Yu CHEN, Cheng-San CHOU, Chin-Min LIN
  • Publication number: 20220382069
    Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Inventors: Hsin-Yu CHEN, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
  • Patent number: 11514707
    Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: November 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: You-Cheng Jhang, Han-Zong Pan, Wei-Ding Wu, Jui-Chun Weng, Hsin-Yu Chen, Cheng-San Chou, Chin-Min Lin
  • Publication number: 20220373815
    Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Application
    Filed: August 4, 2022
    Publication date: November 24, 2022
    Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
  • Publication number: 20220365424
    Abstract: A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Kuo-Hao LEE, You-Cheng JHANG, Han-Zong PAN, Jui-Chun WENG, Chiu-Hua CHUNG, Sheng-Yuan LIN, Hsin-Yu CHEN
  • Publication number: 20220365423
    Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.
    Type: Application
    Filed: July 18, 2022
    Publication date: November 17, 2022
    Inventors: Kuo-Hao LEE, Hsi-Cheng HSU, Jui-Chun WENG, Han-Zong PAN, Hsin-Yu CHEN, You-Cheng JHANG
  • Patent number: 11454820
    Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: September 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
  • Patent number: 11448891
    Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: September 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen-Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
  • Patent number: 11415878
    Abstract: A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: August 16, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hao Lee, You-Cheng Jhang, Han-Zong Pan, Jui-Chun Weng, Chiu-Hua Chung, Sheng-Yuan Lin, Hsin-Yu Chen
  • Patent number: 11392024
    Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: July 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hao Lee, Hsi-Cheng Hsu, Jui-Chun Weng, Han-Zong Pan, Hsin-Yu Chen, You-Cheng Jhang