Patents by Inventor Han Zuilhof

Han Zuilhof has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Orifice surface, print head comprising an orifice surface and method for forming the orifice surface
    Patent number: 9956777
    Abstract: An orifice surface is provided with a coating. A molecule for forming the coating is bonded to the orifice surface through a silicon-carbon bond. The molecule constituting the coating comprises exactly one fluoro-atom. A print head is provided with such orifice surface. In addition, a methods of manufacturing such orifice surface and a method of printing using a print head provided with such orifice surface are disclosed.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: May 1, 2018
    Assignee: OCÉ- TECHNOLOGIES B.V.
    Inventors: Zhanhua Wang, Han Zuilhof, Marc Van Den Berg
  • ORIFICE SURFACE, PRINT HEAD COMPRISING AN ORIFICE SURFACE AND METHOD FOR FORMING THE ORIFICE SURFACE
    Publication number: 20160361921
    Abstract: An orifice surface is provided with a coating. A molecule for forming the coating is bonded to the orifice surface through a silicon-carbon bond. The molecule constituting the coating comprises exactly one fluoro-atom. A print head is provided with such orifice surface. In addition, a methods of manufacturing such orifice surface and a method of printing using a print head provided with such orifice surface are disclosed.
    Type: Application
    Filed: June 9, 2016
    Publication date: December 15, 2016
    Applicant: Océ-Technologies B.V.
    Inventors: Zhanhua WANG, Han ZUILHOF, Marc VAN DEN BERG
  • Method for producing a hybrid organic silicon field effect transistor structure
    Publication number: 20050227405
    Abstract: The invention relates to a method for producing a hybrid organic silicon field effect transistor structure, comprising the steps of: i) providing a group IV element based semiconductor substrate provided with a source region, gate region and drain region, having at least in the gate region a surface with hydrogen terminated group IV elements; and ii) covering at least the gate region with an organic monolayer by covalently reacting monolayer forming molecules with terminated hydrogen of the group IV elements at the surface, which monolayer forming molecules comprise a proximal terminated hydrogen reactive group and a spacer group and to a hybrid organic silicon field effect transistor structure as obtainable with the method.
    Type: Application
    Filed: May 19, 2003
    Publication date: October 13, 2005
    Inventors: Ernst Jan Sudholter, Alexander Sieval, Han Zuilhof, Louis Cornelia De Smet, Gerben Visser, Wouter Olthuis, Piet Bergveld, E.J. Faber