Abstract: The present invention has been made in view of such background arts, and an object thereof is to provide a coated carbon material that can provide a secondary battery not only maintaining capacity, but also having excellent initial efficiency, as compared with a conventional art, and as a result, to provide a high-performance secondary battery. A coated carbon material where a carbon material is coated with a coating film, in which the coating film includes at least one selected from the following compound (X) and a crosslinked product of the following compounds (Y): (X): an acetoacetyl group-containing resin, and (Y): a polyvinyl alcohol-based resin and a silicon element-containing compound.

Abstract: An ultrasonic image display system and a program for controlling an ultrasonic image display system are disclosed herein. The ultrasonic image display system includes at least one processor and memory. In the memory is stored at least one protocol including a plurality of image acquisition steps. The processor is adapted to load the protocol to start a first run of the protocol, interrupt the first run of the protocol, acquire data for a second ultrasonic image of the patient and store the data in the memory after interrupting the first run of the protocol at one of the acquisition steps. The processor is adapted to interrupt the second run of the protocol at the same one of the acquisition steps or give notice that the second run of the protocol will be interrupted at the same one of the acquisition steps.

Abstract: A method of ultrasonic imaging includes displaying a first ultrasonic image, receiving an operator's input defining a region of interest, creating a first time intensity curve for the region of interest in the first ultrasonic image, displaying the first time intensity curve on a display device with the first ultrasonic image, and storing information on a position of the region of interest in a non-transitory storage medium. The method includes displaying a second ultrasonic image, reading information on the position from the non-transitory storage medium, creating a second time intensity curve for the region of interest in the second ultrasonic image; and displaying the second time intensity curve on the display device with the second ultrasonic image.

Abstract: A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of ?40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of ?80 ppm or more and less than ?40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

Abstract: The present invention provides a curable polysiloxane composition which is excellent in light resistance (particularly ultraviolet resistance) and adhesion and has a sufficient heat resistance/hydrothermal resistance and film-forming property and which generates little foaming at curing and does not generate cracks, peeling, coloring, and foaming even when used for a long period of time. A curable polysiloxane composition which comprises a specific hydrosilyl group-containing polysiloxane compound, a specific polysiloxane compound comprising two or more silanol groups in one molecule, and a dehydrogenative condensation reaction catalyst.

Abstract: To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.

Abstract: A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of ?40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of ?80 ppm or more and less than ?40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

Abstract: The present invention provides a curable polysiloxane composition which is excellent in light resistance (particularly ultraviolet resistance) and adhesion and has a sufficient heat resistance/hydrothermal resistance and film-forming property and which generates little foaming at curing and does not generate cracks, peeling, coloring, and foaming even when used for a long period of time. A curable polysiloxane composition which comprises a specific hydrosilyl group-containing polysiloxane compound, a specific polysiloxane compound comprising two or more silanol groups in one molecule, and a dehydrogenative condensation reaction catalyst.

Abstract: To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.

Abstract: A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of ?40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of ?80 ppm or more and less than ?40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

Abstract: To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.

Abstract: To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.

Abstract: A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided. Therefore, a semiconductor light-emitting device member that comprises (1) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from a group consisting of (i) peaks whose peak top position is in an area of a chemical shift of ?40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (ii) peaks whose peak top position is in an area of the chemical shift of ?80 ppm or more and less than ?40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (2) silicon content is 20 weight % or more and (3) silanol content is 0.1 weight % to 10 weight % inclusive is used.

Abstract: Silica with a large pore volume, a large specific surface area, a narrow pore distribution, low contents of unwanted metal impurities, and excellent physical properties such as high heat-resistance and water-resistance is provided. The silica has a mode pore diameter (Dmax) of 20 nm or less, and a solid-state Si nuclear magnetic resonance (hereinafter called solid-state Si NMR) spectrum of the silica includes a chemical shift (? ppm) of Q4 peak meeting the following inequality (I). ?0.0705×(Dmax)?110.36>???(I) The silica with such properties can be suitably used in fields of which particularly excellent heat resistance and water resistance are required, and moreover controlled pore properties, and the fact that physical properties scarcely change over a long period of time are required among the above-mentioned applications.

Abstract: A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described. Also described in a silica gel produced by such a method and a silica gel which has the following characteristics: (a) the pore volume is from 0.6 to 1.6 ml/g, (b) the specific surface area is from 300 to 900 m2/g, (c) the mode diameter (Dmax) of pores is less than 20 nm, (d) the volume of pores having diameters within ±20% of Dmax is at least 50% of the total pore volume, (e) it is amorphous, and (f) the content of metal impurities is at most 500 ppm.

Abstract: Silica with a large pore volume, a large specific surface area, a narrow pore distribution, low contents of unwanted metal impurities, and excellent physical properties such as high heat-resistance and water-resistance is provided. The silica has a mode pore diameter (Dmax) of 20 nm or less, and a solid-state Si nuclear magnetic resonance (hereinafter called solid-state Si NMR) spectrum of the silica includes a chemical shift (? ppm) of Q4 peak meeting the following inequality (I). ?0.0705×(Dmax)?110.36>???(I) The silica with such properties can be suitably used in fields of which particularly excellent heat resistance and water resistance are required, and moreover controlled pore properties, and the fact that physical properties scarcely change over a long period of time are required among the above-mentioned applications.

Abstract: A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described. Also described in a silica gel produced by such a method and a silica gel which has the following characteristics: (a) the pore volume is from 0.6 to 1.6 ml/g, (b) the specific surface area is from 300 to 900 m2/g, (c) the mode diameter (Dmax) of pores is less than 20 nm, (d) the volume of pores having diameters within ±20% of Dmax is at least 50% of the total pore volume, (e) it is amorphous, and (f) the content of metal impurities is at most 500 ppm.

Abstract: A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described. Also described in a silica gel produced by such a method and a silica gel which has the following characteristics: (a) the pore volume is from 0.6 to 1.6 ml/g, (b) the specific surface area is from 300 to 900 m2/g, (c) the mode diameter (Dmax) of pores is less than 20 nm, (d) the volume of pores having diameters within ±20% of Dmax is at least 50% of the total pore volume, (e) it is amorphous, and (f) the content of metal impurities is at most 500 ppm.

Abstract: A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described.

Abstract: The siloxane compounds represented by the following formula: SiOa(OH)b(OR1)c(OR2)d wherein 1.0≦a≦1.6, 0≦b<0.3, 0.2≦c≦2.0, 0≦d≦1.4, 2a+b+c+d=4, R1 is a methyl or ethyl group, and R2 is an organic group different from R1.