Patents by Inventor Hanan Bar
Hanan Bar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9073386Abstract: A paint tray designed to be assembled into a board. Two wheels are attached to the underside of the board, enabling the tray and the board to be moved around on the floor. The tray is equipped with legs that are attached to the underside of the tray and serve to stabilize the tray and board on the floor. The tray is connected to the board by axial connections on both sides and by a spring at the front end. When force is exerted on the front end of the tray, the front tends downwards whilst the back end rises so that the legs detach from the floor, enabling the board and tray to move about on the floor.Type: GrantFiled: December 16, 2013Date of Patent: July 7, 2015Inventor: Hanan Bar Shlomo
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Publication number: 20150165816Abstract: A paint tray designed to be assembled into a board. Two wheels are attached to the underside of the board, enabling the tray and the board to be moved around on the floor. The tray is equipped with legs that are attached to the underside of the tray and serve to stabilize the tray and board on the floor. The tray is connected to the board by axial connections on both sides and by a spring at the front end. When force is exerted on the front end of the tray, the front tends downwards whilst the back end rises so that the legs detach from the floor, enabling the board and tray to move about on the floor.Type: ApplicationFiled: December 16, 2013Publication date: June 18, 2015Inventor: Hanan Bar Shlomo
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Publication number: 20140307997Abstract: Photonic passivation layers, III-V semiconductor die with offcut edges, and NiGe contact metallization for silicon-based photonic integrated circuits (PICs). In embodiments, a non-sacrificial passivation layer is formed on a silicon photonic element, such as a waveguide for protection of the waveguide surfaces. In embodiments, a III-V semiconductor film is transferred from a III-V growth substrate that is singulated along streets that are misaligned from cleave planes to avoid crystallographic etch artifacts in a layer transfer process. In embodiments, a NiGe contact metallization is employed for both p-type and n-type contacts on a device formed in the transferred III-V semiconductor layer to provide low specific contact resistance and compatibility with MOS processes.Type: ApplicationFiled: December 20, 2011Publication date: October 16, 2014Inventors: Hanan Bar, John Heck, Avi Feshali, Ran Feldesh
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Patent number: 8620164Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.Type: GrantFiled: January 20, 2011Date of Patent: December 31, 2013Assignee: Intel CorporationInventors: John Heck, Hanan Bar, Richard Jones, Hyundai Park
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Publication number: 20130186902Abstract: The product is the invention of a device-application on wheels that is connected to a standard paint tray, tubs and containers. When the device is connected to the paint tray it is possible to mobilize a paint tray on wheels. The devices with the wheels are connected to the upper ledge of the tray or tubs or containers. The devices make it possible for the paint tray to be mobile or stationary. When in a stationary position, the tray stops by the lower frontal part of the tray itself, and the backside of the tray stays standing on wheels and this causes a halt and an inability to move. When in a mobile position, by pressing the holder of the roller or on the deep backside of the tray by the roller, the frontal part of the tray rises and transfers its weight to all the wheels and thus allows a mobile position. The moveable tray is permissible because the connection of the device to the backside ledge is low in comparison to the other devices.Type: ApplicationFiled: January 4, 2013Publication date: July 25, 2013Inventor: Hanan BAR-SHLOMO
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Publication number: 20120189317Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.Type: ApplicationFiled: January 20, 2011Publication date: July 26, 2012Inventors: John Heck, Hanan Bar, Richard Jones, Hyundai Park
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Patent number: 7924122Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.Type: GrantFiled: July 6, 2009Date of Patent: April 12, 2011Assignee: Intel CorporationInventors: Tsung-Kuan Allen Chou, Hanan Bar
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Patent number: 7898371Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.Type: GrantFiled: September 4, 2009Date of Patent: March 1, 2011Assignee: Intel CorporationInventors: Hanan Bar, Tsung-Kuan Allen Chou
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Patent number: 7734123Abstract: Briefly, in accordance with one or more embodiments, a hybrid photonics device comprises a silicon portion having one or more features formed therein, a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, and a bonding layer coupling the silicon portion with the non-silicon portion, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices.Type: GrantFiled: May 2, 2008Date of Patent: June 8, 2010Assignee: Intel CorporationInventors: Hanan Bar, Richard Jones
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Patent number: 7705699Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.Type: GrantFiled: June 27, 2007Date of Patent: April 27, 2010Assignee: Intel CorporationInventors: Tsung-Kuan Allen Chou, Hanan Bar
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Publication number: 20100072043Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.Type: ApplicationFiled: September 4, 2009Publication date: March 25, 2010Applicant: INTEL CORPORATIONInventors: Hanan Bar, Tsung-Kuan Allen Chou
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Publication number: 20090274411Abstract: Briefly, in accordance with one or more embodiments, a hybrid photonics device comprises a silicon portion having one or more features formed therein, a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, and a bonding layer coupling the silicon portion with the non-silicon portion, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices.Type: ApplicationFiled: May 2, 2008Publication date: November 5, 2009Inventors: Hanan Bar, Richard Jones
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Publication number: 20090266688Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.Type: ApplicationFiled: July 6, 2009Publication date: October 29, 2009Inventors: Tsung-Kuan Allen Chou, Hanan Bar
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Patent number: 7605675Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.Type: GrantFiled: June 20, 2006Date of Patent: October 20, 2009Assignee: Intel CorporationInventors: Hanan Bar, Tsung-Kuan Allen Chou
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Patent number: 7362199Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.Type: GrantFiled: March 31, 2004Date of Patent: April 22, 2008Assignee: Intel CorporationInventors: Tsung-Kuan Allen Chou, Hanan Bar
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Patent number: 7321275Abstract: An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.Type: GrantFiled: June 23, 2005Date of Patent: January 22, 2008Assignee: Intel CorporationInventors: Tsung-Kuan Allen Chou, Hanan Bar, Quan Tran, Joseph Melki, John Heck, Qing Ma
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Publication number: 20070290773Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.Type: ApplicationFiled: June 20, 2006Publication date: December 20, 2007Inventors: Hanan Bar, Tsung-Kuan Allen Chou
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Publication number: 20070256918Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.Type: ApplicationFiled: June 27, 2007Publication date: November 8, 2007Inventors: Tsung-Kuan Chou, Hanan Bar
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Patent number: 7283024Abstract: In a Micro Electro-Mechanical System (MEMS) switch, a common switch failure is a short between the upper and the lower electrostatic actuation plates. Such shorts may occur due to torque deformation. Stopper bumps having a slightly lower height profile than that of the contact bumps are provided to prevent such shorts. The stopper bumps may be made using the same mask as that used to create the contact bump with the height of the respective bumps controlled by determining the diameter of the bumps.Type: GrantFiled: December 18, 2003Date of Patent: October 16, 2007Assignee: Intel CorporationInventors: Hanan Bar, John Heck
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Publication number: 20060290443Abstract: An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.Type: ApplicationFiled: June 23, 2005Publication date: December 28, 2006Inventors: Tsung-Kuan Chou, Hanan Bar, Quan Tran, Joseph Melki, John Heck, Qing Ma