Patents by Inventor Hananel Kang

Hananel Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Source separated cell
    Patent number: 9577639
    Abstract: A MOS device includes a first MOS transistor having a first MOS transistor source, a first MOS transistor drain, and a first MOS transistor gate. The MOS device also includes a second MOS transistor having a second MOS transistor source, a second MOS transistor drain, and a second MOS transistor gate. The second MOS transistor source and the first MOS transistor source are coupled to a first voltage source. The MOS device includes a third MOS transistor having a third MOS transistor gate, the third MOS transistor gate between the first MOS transistor source and the third MOS transistor source, the third MOS transistor further having a third MOS transistor source and a third MOS transistor drain, the third MOS transistor source being coupled to the first MOS transistor source, the third MOS transistor drain being coupled to the second MOS transistor source, the third MOS transistor gate floating.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: February 21, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Satyanarayana Sahu, Xiangdong Chen, Venugopal Boynapalli, Hyeokjin Bruce Lim, Mukul Gupta, Hananel Kang, Chih-lung Kao, Radhika Guttal