Patents by Inventor Hanbing WU
Hanbing WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11802340Abstract: A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.Type: GrantFiled: December 12, 2017Date of Patent: October 31, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Bharath Swaminathan, John Mazzocco, Hanbing Wu, Ashish Goel, Anantha K. Subramani
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Patent number: 11600476Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: GrantFiled: October 18, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Patent number: 11459651Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.Type: GrantFiled: February 7, 2017Date of Patent: October 4, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xiaodong Wang, Rongjun Wang, Hanbing Wu
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Publication number: 20220037136Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: ApplicationFiled: October 18, 2021Publication date: February 3, 2022Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Patent number: 11183375Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: GrantFiled: January 27, 2015Date of Patent: November 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Patent number: 11101117Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: GrantFiled: September 17, 2019Date of Patent: August 24, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Hanbing Wu, Wei W. Wang, Ashish Goel, Srinivas Guggilla, Lavinia Nistor
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Patent number: 11043364Abstract: Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.Type: GrantFiled: June 5, 2017Date of Patent: June 22, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Deepak Jadhav, Rongjun Wang, Chi Hong Ching
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Patent number: 11011357Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.Type: GrantFiled: February 7, 2018Date of Patent: May 18, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Xiaodong Wang, Wei W. Wang, Rongjun Wang, Chi Hong Ching
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Patent number: 10978276Abstract: Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.Type: GrantFiled: January 22, 2020Date of Patent: April 13, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bharath Swaminathan, Hanbing Wu, John Mazzocco
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Patent number: 10704139Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 ?m to 200 ?m. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 ?m to 200 ?m and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.Type: GrantFiled: April 7, 2017Date of Patent: July 7, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Xiaodong Wang, Rongjun Wang, Hanbing Wu
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Publication number: 20200161095Abstract: Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.Type: ApplicationFiled: January 22, 2020Publication date: May 21, 2020Inventors: Bharath SWAMINATHAN, Hanbing WU, John MAZZOCCO
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Patent number: 10573498Abstract: Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate support includes a substrate support pedestal having an upper surface to support a substrate and an opposing bottom surface, wherein the substrate support pedestal is formed of a material that is transparent to radiation; a lamp assembly disposed below the substrate support pedestal and having a plurality of lamps configured to heat the substrate; a pedestal support extending through the lamp assembly to support the substrate support pedestal in a spaced apart relation to the plurality of lamps; a shaft coupled to a second end of the pedestal support opposite the first end; and a rotation assembly coupled to the shaft opposite the pedestal support to rotate the shaft, the pedestal support, and the substrate support pedestal with respect to the lamp assembly.Type: GrantFiled: January 9, 2017Date of Patent: February 25, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Bharath Swaminathan, Hanbing Wu, John Mazzocco
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Publication number: 20200013597Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: ApplicationFiled: September 17, 2019Publication date: January 9, 2020Inventors: Anantha K. SUBRAMANI, Hanbing WU, Wei W. WANG, Ashish GOEL, Srinivas GUGGILLA, Lavinia NISTOR
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Patent number: 10468238Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: GrantFiled: August 18, 2016Date of Patent: November 5, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Hanbing Wu, Wei W. Wang, Ashish Goel, Srinivas Guggilla, Lavinia Nistor
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Patent number: 10249522Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.Type: GrantFiled: June 5, 2017Date of Patent: April 2, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Wei W. Wang, Aaron Muir Hunter
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Publication number: 20180350572Abstract: Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.Type: ApplicationFiled: June 5, 2017Publication date: December 6, 2018Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Deepak Jadhav, Rongjun Wang, Chi Hong Ching
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Publication number: 20180291500Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 ?m to 200 ?m. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 ?m to 200 ?m and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.Type: ApplicationFiled: April 7, 2017Publication date: October 11, 2018Inventors: XIAODONG WANG, RONGJUN WANG, HANBING WU
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Publication number: 20180240655Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.Type: ApplicationFiled: February 7, 2018Publication date: August 23, 2018Inventors: HANBING WU, ANANTHA K. SUBRAMANI, ASHISH GOEL, XIAODONG WANG, WEI W. WANG, RONGJUN WANG, CHI HONG CHING
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Publication number: 20180223421Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.Type: ApplicationFiled: February 7, 2017Publication date: August 9, 2018Inventors: XIAODONG WANG, RONGJUN WANG, HANBING WU
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Publication number: 20180197721Abstract: Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate support includes a substrate support pedestal having an upper surface to support a substrate and an opposing bottom surface, wherein the substrate support pedestal is formed of a material that is transparent to radiation; a lamp assembly disposed below the substrate support pedestal and having a plurality of lamps configured to heat the substrate; a pedestal support extending through the lamp assembly to support the substrate support pedestal in a spaced apart relation to the plurality of lamps; a shaft coupled to a second end of the pedestal support opposite the first end; and a rotation assembly coupled to the shaft opposite the pedestal support to rotate the shaft, the pedestal support, and the substrate support pedestal with respect to the lamp assembly.Type: ApplicationFiled: January 9, 2017Publication date: July 12, 2018Inventors: Bharath SWAMINATHAN, HANBING WU, JOHN MAZZOCCO