Patents by Inventor Hanching Fuh

Hanching Fuh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250125288
    Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
    Type: Application
    Filed: December 16, 2024
    Publication date: April 17, 2025
    Inventors: Hanching FUH, Anuj MADAN, Guillaume Alexandre BLIN, Fikret ALTUNKILIC
  • Patent number: 12273100
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Grant
    Filed: May 28, 2024
    Date of Patent: April 8, 2025
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Publication number: 20250007512
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Application
    Filed: May 28, 2024
    Publication date: January 2, 2025
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 12176304
    Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
    Type: Grant
    Filed: November 6, 2023
    Date of Patent: December 24, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hanching Fuh, Anuj Madan, Guillaume Alexandre Blin, Fikret Altunkilic
  • Publication number: 20240250003
    Abstract: The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly. The source fingers and the drain fingers can be arranged in alternating rows.
    Type: Application
    Filed: December 12, 2023
    Publication date: July 25, 2024
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 11996832
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Grant
    Filed: June 13, 2023
    Date of Patent: May 28, 2024
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Publication number: 20240153891
    Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
    Type: Application
    Filed: November 6, 2023
    Publication date: May 9, 2024
    Inventors: Hanching FUH, Anuj MADAN, Guillaume Alexandre BLIN, Fikret ALTUNKILIC
  • Publication number: 20240030908
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Application
    Filed: June 13, 2023
    Publication date: January 25, 2024
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 11842947
    Abstract: The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly. The source fingers and the drain fingers can be arranged in alternating rows.
    Type: Grant
    Filed: May 11, 2021
    Date of Patent: December 12, 2023
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 11810874
    Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: November 7, 2023
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hanching Fuh, Anuj Madan, Guillaume Alexandre Blin, Fikret Altunkilic
  • Patent number: 11677395
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Grant
    Filed: August 16, 2022
    Date of Patent: June 13, 2023
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Publication number: 20230084412
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Application
    Filed: August 16, 2022
    Publication date: March 16, 2023
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Publication number: 20220336380
    Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
    Type: Application
    Filed: March 28, 2022
    Publication date: October 20, 2022
    Inventors: Hanching FUH, Anuj MADAN, Guillaume Alexandre BLIN, Fikret ALTUNKILIC
  • Patent number: 11418185
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Grant
    Filed: July 13, 2021
    Date of Patent: August 16, 2022
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 11289432
    Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
    Type: Grant
    Filed: July 15, 2018
    Date of Patent: March 29, 2022
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hanching Fuh, Anuj Madan, Guillaume Alexandre Blin, Fikret Altunkilic
  • Publication number: 20220038091
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Application
    Filed: July 13, 2021
    Publication date: February 3, 2022
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Publication number: 20210335857
    Abstract: Field-effect transistor (FET) devices are described herein that include an insulator layer, a plurality of active field-effect transistors (FETs) formed from an active silicon layer implemented over the insulator layer, a substrate layer implemented under the insulator layer, and proximity electrodes for a plurality of the FETs that are each configured to receive a voltage and to generate an electric field between the proximity electrode and a region generally underneath a corresponding active FET. FET devices can be stacked wherein one or more of the FET devices in the stack includes a proximity electrode. The proximity electrodes can be biased together, biased in groups, and/or biased individually.
    Type: Application
    Filed: June 29, 2021
    Publication date: October 28, 2021
    Inventors: Hailing Wang, Hanching Fuh, Dylan Charles Bartle, Jerod F. Mason
  • Publication number: 20210265242
    Abstract: The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly. The source fingers and the drain fingers can be arranged in alternating rows.
    Type: Application
    Filed: May 11, 2021
    Publication date: August 26, 2021
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 11063586
    Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: July 13, 2021
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Dylan Charles Bartle, Hanching Fuh, Jerod F. Mason, David Scott Whitefield, Paul T. DiCarlo
  • Patent number: 11049890
    Abstract: Field-effect transistor (FET) devices are described herein that include an insulator layer, a plurality of active field-effect transistors (FETs) formed from an active silicon layer implemented over the insulator layer, a substrate layer implemented under the insulator layer, and proximity electrodes for a plurality of the FETs that are each configured to receive a voltage and to generate an electric field between the proximity electrode and a region generally underneath a corresponding active FET. FET devices can be stacked wherein one or more of the FET devices in the stack includes a proximity electrode. The proximity electrodes can be biased together, biased in groups, and/or biased individually.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: June 29, 2021
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Hailing Wang, Hanching Fuh, Dylan Charles Bartle, Jerod F. Mason