Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.

Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.

Abstract: After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.

Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Abstract: After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.

Abstract: After forming a plurality of metal anchors arranged in a matrix of rows and columns and a plurality trenches separating adjacent rows of metal anchors on a substrate, a dispersion comprising charged single-wall carbon nanotubes (SWCNTs) having a surface binding group on each end of the charged SWCNTs is directed to flow through the plurality of trenches. During the flow process, one end of each of the charged SWCNTs binds to a corresponding metal anchor through a surface binding group. An electric field is then applied to align the charged SWCNTs parallel to lengthwise directions of the plurality of trenches such that another end of the each of the SWCNTs binds to an adjacent metal anchor through another surface binding group. The aligned charged SWCNTs can be used as conducting channels for field effect transistors (FETs).