Abstract: A backlight driving method and a display panel are provided. The backlight driving method provided by the present application uses pulse width modulation technology to modulate a low-level pulse width of a scan signal. By increasing a low-level pulse width to increase the pulse period, a number of high-level pulses is reduced, thereby reducing a high-level pulse time. Therefore, a time for a TFT to receive a high-level voltage is also reduced, thereby improving a stability of the TFT and also improving a problem of a threshold voltage drift of the TFT.

Abstract: Methods and apparatuses of boundary refinement for instance segmentation. The methods for instance segmentation include receiving an image and an instance mask identifying an instance in the image; extracting a set of image patches from the image based on a boundary of the instance mask; generating a refined mask patch for each of the set of image patches based on at least a part of the instance mask corresponding to the each of the set of image patches; and refining the boundary of the instance mask based on the refined mask patch for each of the set of image patches.

Abstract: The present invention relates to population of T cells with reduced expression of SIGLEC15, wherein the T cells are derived from sentinel lymph nodes in a subject having a cancer. The invention also relates to methods for obtaining such T cells, as well as to their use in therapy and pharmaceutical compositions comprising such T cells.

Abstract: This application relates to the field of battery technology, and in particular, to a box assembly, a battery module, a battery, and an electrical device. The box assembly may include at least a partition piece and two end plates. In the box assembly disclosed herein, a stress relief piece may be disposed at two ends of a main body of the partition piece. The main body may be connected to the end plate by use of the stress relief piece. A corner may be formed between the stress relief piece and the main body. In this way, when the battery module is subjected to stress, at least a part of the stress can be relieved through the corner formed between the stress relief piece and the main body.

Abstract: A preparation method of a pyrimidinylthio-benzoate oxime ester compound and an application thereof are provided. The chemical structural formula of the pyrimidinylthio-benzoate compound is shown in the following formula (1). The preparation method includes step A: preparation of a substituted acetophenone oxime: taking hydroxylamine hydrochloride and a substituted acetophenone as a raw material, adding an alcohol as a solvent, and performing a reaction at 0° C.-80° C. for 1-5 hours under an alkaline condition to obtain the substituted acetophenone oxime; and step B: preparation of the compound: using 2-chloro-6-((4,6-dimethoxypyrimidin-2-yl)thio)benzoic acid and the substituted acetophenone oxime as a raw material, and performing a reaction under an action of an organic solvent, a dehydrating agent and a catalyst at 25° C. for 6-24 hours; after the reaction is completed, performing a suction filtration, and subjecting the filtrate to a decompression distillation and a recrystallization to obtain the compound.

Abstract: An ion beam lens and methods for combining ion beams are disclosed. Embodiments combine hyperthermal ion beams and can include layered three-dimensional electrodes with passageways through the electrodes, each electrode having a specified DC voltage and each passageway configured for passing an ion beam to an exit, the velocity vectors of the beams being primarily oriented along the lens' central axis upon exiting the passageways. Embodiments include nested electrode plates with curved ion beam passageways. In some embodiments each electrode plate has a charge different from the electrode plates adjacent to it, and in some embodiments every other electrode plate is charged with a first DC voltage and the remaining plates are charged with a second DC voltage different from the first DC voltage.

Abstract: A preparation method of a pyrimidinylthio-benzoate oxime ester compound and an application thereof are provided. The chemical structural formula of the pyrimidinylthio-benzoate compound is shown in the following formula (I). The preparation method includes step A: preparation of a substituted acetophenone oxime: taking hydroxylamine hydrochloride and a substituted acetophenone as a raw material, adding an alcohol as a solvent, and performing a reaction at 0° C.-80° C. for 1-5 hours under an alkaline condition to obtain the substituted acetophenone oxime; and step B: preparation of the compound: using 2-chloro-6-((4,6-dimethoxypyrimidin-2-yl)thio)benzoic acid and the substituted acetophenone oxime as a raw material, and performing a reaction under an action of an organic solvent, a dehydrating agent and a catalyst at 25° C. for 6-24 hours; after the reaction is completed, performing a suction filtration, and subjecting the filtrate to a decompression distillation and a recrystallization to obtain the compound.

Abstract: A vertical transistor device comprises a substrate, a first source, a drain, a first gate dielectric layer, a first gate electrode and a first doping region. The substrate has at least one protruding portion. The first source having a first conductivity type is formed on the substrate. The drain having the first conductivity type is disposed on the protruding portion. The first gate electrode is disposed adjacent to a first sidewall of the protruding portion. The first gate dielectric layer is disposed between the first gate electrode and the first sidewall as well as being disposed adjacent to the first source and the drain. The first doping region having a second conductivity type is formed beneath the protruding portion and adjacent to the first source.

Abstract: The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present invention further provides a method for forming a MOS.

Abstract: A vertical transistor device comprises a substrate, a first source, a drain, a first gate dielectric layer, a first gate electrode and a first doping region. The substrate has at least one protruding portion. The first source having a first conductivity type is formed on the substrate. The drain having the first conductivity type is disposed on the protruding portion. The first gate electrode is disposed adjacent to a first sidewall of the protruding portion. The first gate dielectric layer is disposed between the first gate electrode and the first sidewall as well as being disposed adjacent to the first source and the drain. The first doping region having a second conductivity type is formed beneath the protruding portion and adjacent to the first source.

Abstract: The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present invention further provides a method for forming a MOS.

Abstract: Provided are methods of converting carbon dioxide to carbon nitrides. In a first reaction, carbon dioxide may be reacted with metal nitrides, such as Li3N, to form carbon nitrides in a fast and exothermic reaction. Also provided are methods of using product metal cyanamides from the first reaction to subsequently generate additional carbon nitrides.

Abstract: A facile mechanochemical intercalation approach was adopted to immobilize ionic liquids into layered materials. The immobilized ionic liquids were found to be useful as catalysts for the coupling reaction of CO2 and propylene oxide to synthesize propylene carbonate. The immobilized ionic liquid exhibited similar reactivity as the free ionic liquid. Overall, the 10 mechanochemical approach proves to be effective in immobilizing ionic liquids in layered compounds and thus may expand the applications of ionic liquids and, meanwhile, improve catalyst separation and recycling.

Abstract: A method for forming an embedded capacitor structure is provided. Firstly, a first dielectric layer having a trench therein on a substrate is provided. A capacitor structure is formed on the bottom surface of the trench. The capacitor structure includes a first metal layer, a capacitance-insulating layer and a second metal layer and the portion surface of the first metal layer on the bottom surface of the trench is exposed. A cap layer is formed on the top surface and the inner surface of the trench and on the capacitor structure. A second dielectric layer is formed on the cap layer. The portion of second dielectric layer and the portion of the cap layer are removed to form a plurality of contact windows therein, and the portion surface of the first metal layer and the portion surface of the second metal layer are exposed by the plurality of contact windows.

Abstract: A manufacturing method of a semiconductor device includes the following steps. First, a substrate is provided. At least one gate trench and a first inter-layer dielectric layer are formed on the substrate. A work function metallic layer is then formed in the gate trench. A first contact hole is then formed in the first inter-layer dielectric layer. A main conductive layer is formed in the gate trench and the first contact hole simultaneously.

Abstract: A manufacturing method of a semiconductor device includes the following steps. First, a substrate is provided. At least one gate trench and a first inter-layer dielectric layer are formed on the substrate. A work function metallic layer is then formed in the gate trench. A first contact hole is then formed in the first inter-layer dielectric layer. A main conductive layer is formed in the gate trench and the first contact hole simultaneously.

Abstract: A method for forming an embedded capacitor structure is provided. Firstly, a first dielectric layer having a trench therein on a substrate is provided. A capacitor structure is formed on the bottom surface of the trench. The capacitor structure includes a first metal layer, a capacitance-insulating layer and a second metal layer and the portion surface of the first metal layer on the bottom surface of the trench is exposed. A cap layer is formed on the top surface and the inner surface of the trench and on the capacitor structure. A second dielectric layer is formed on the cap layer. The portion of second dielectric layer and the portion of the cap layer are removed to form a plurality of contact windows therein, and the portion surface of the first metal layer and the portion surface of the second metal layer are exposed by the plurality of contact windows.

Abstract: Provided are methods of converting carbon dioxide to carbon nitrides. In a first reaction, carbon dioxide may be reacted with metal nitrides, such as Li3N, to form carbon nitrides in a fast and exothermic reaction. Also provided are methods of using product metal cyanamides from the first reaction to subsequently generate additional carbon nitrides.

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a gate and a source/drain region thereon; forming a Ni—Pt layer on surface of the gate and the source/drain region; performing a first rapid thermal process to react a portion of the Ni—Pt layer into a silicide layer; removing un-reacted nickel from the first rapid thermal process; removing un-reacted platinum from the first rapid thermal process; performing a second rapid thermal process for lowering the resistance of the silicide layer; and covering a contact etch stop layer (CESL) on the silicide layer after the second rapid thermal process.

Abstract: A method is provided for the preparation of a hydrogen storage medium having a high hydrogen storage capacity, high reversibility and fast reaction time. A high storage capacity Li3N-containing media with high reversibility is also provided.