Abstract: A pulse diagnosis device which can detect the pulsation signal of a radial artery using an optical sensor comprising: a sensor module for sensing the pulsation signal by closely adhering thereto a prescribed body part; and a system control portion for operating the sensor module, and processing the optical signal sensed from the sensor module, wherein the sensor module comprises: an optical waveguide-type sensor which is placed on the bottom surface of the sensor module, and lets the optical signal to pass therethrough and detects the change in optical characteristics due to the change in the pressure; a light-source module which is connected on one side surface of the optical waveguide-type sensor, and inputs the optical signal into the optical waveguide-type sensor; and an optical detector module which is connected on one side surface of the optical waveguide-type sensor, and detects the optical signal delivered from the optical waveguide-type sensor.

Abstract: A method for fabricating a silicon nano wire, a solar cell including the silicon nano wire and a method for fabricating the solar cell. The solar cell includes a substrate, a first++-type poly-Si layer formed on the substrate, a first-type silicon nano wire layer including a first-type silicon nano wire grown from the first++-type poly-Si layer, an intrinsic layer formed on the substrate having the first-type silicon nano wire layer, and a second-type doping layer formed on the intrinsic layer.

Abstract: A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.

Abstract: A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.