Abstract: A superhydrophobic structure with droplet-guiding capability includes: a substrate having a surface and front and rear sides; and a plurality of oblique cones exhibiting superhydrophobic properties and protruding frontwardly and obliquely from the surface in an inclined direction inclined to the surface, so that liquid droplets are guided by the oblique cones to move therealong when the liquid droplets move frontwardly from the rear side toward the front side and so that the liquid droplets move against the oblique cones when the liquid droplets move rearwardly from the front side toward the rear side. A method of making the superhydrophobic structure is also disclosed.

Abstract: A magnetic device with a three-dimensional wave structure is provided, which contains magnetic elements and a signal receiver. The magnetic element is nano/micron structure with magnetic anisotropy. The magnetic element is formed on a substrate with three-dimensional wave structure. When a magnetic substance approaches to the magnetic element, the magnetic substance produces a corresponding magnetoresistance signal for the magnetic element. Through the measurement of the magnetoresistance of the three-dimensional wave structure, and the presence or absence of the magnetic substance can be detected. An external magnetic field is used to change the magnetization configuration of the three-dimensional wave structure to capture the magnetic substance by adsorbing the magnetic substance to a magnetic pole of the three-dimensional wave structure.

Abstract: A manufacturing process of the thermoelectric conversion element is provided, wherein the system using semiconductor process technology to the construction of the thermoelectric conversion element nanoscale thermoelectric effect to increase, and the use of different type and surface state of the sample to increase the thermoelectric conversion element thermoelectric figure of merit. Through the use of a specific thickness of deposition of nanostructures on a nanoscale roughening of the substrate cannot affect the conductivity of thermoelectric materials under, and also can improve the Seebeck coefficient and lower thermal conductivity in order to significantly enhance the thermoelectric figure of merit.

Abstract: The present invention provides a method and an apparatus for clearing temporary files in a mobile terminal and a mobile terminal, the method comprises: receiving a clearing instruction; establishing a writer thread according to the clearing instruction; and controlling the writer thread to write data into a first preset file directory, such that an operating system of the mobile terminal is triggered to clear temporary files in at least one second preset file directory according to a preset cache release rule.

Abstract: The present disclosure provides a cache cleaning method, a cache cleaning apparatus and a client, which improves a cache cleaning efficiency in a client and improves a user experience effectively. The method includes: detecting an amount of used caches in a mobile terminal; if the amount of used caches is larger than a preset threshold, sending a cache application request to an operating system of the mobile terminal so as to trigger a preset cache release rule in the operating system; and after the operating system releases corresponding caches according to the preset cache release rule, sending a cache release request to the operating system such that the operating system releases caches allocated for the cache application request according to the cache release request. The present disclosure may be used in a cache management technique of a mobile terminal.

Abstract: The present invention provides a fabrication of a tetherable patterned thin film with 3D tube-shaped structure. The fabrication includes following steps: preparing a substrate; covering a supportive layer onto the substrate; defining a pattern portion onto the supportive layer; depositing a thin film layer onto the pattern portion; opening at least one concavity onto the supportive layer; removing the substrate in a temperature range; and forming a tube-shaped thin film.

Abstract: The present invention provides a patterned magnetic thin film with 3D tube-shaped structure. The magnetic thin film includes a substrate which includes at least one tube-shaped supportive layer. The tube-shaped supportive layer is rolled up onto the substrate. And the tube-shaped supportive layer further includes a pattern portion which having one or more magnetic material to attract an object into a hollow portion of the tube-shaped supportive layer.

Abstract: The present invention discloses the fabrication of nano-/micro-actuator and gripper with patterned magnetic thin film. The design of the actuator comprised highly flexible stretchable structures and patterned magnetic films. The magnetic thin film with elongated shape caused magnetic anisotropy, resulting in single domain resembled magnetic configuration. The design of the magnetic gripper contains double fixtures, double stretchable structures and patterned magnetic thin films and driven similar process as the actuator. The lateral displacement of the double fixtures causes the fixture move near and away from each other and causes opening and closing behavior.

Abstract: A CPU control method for controlling a first CPU and a second CPU The method comprises: (a) applying the first CPU to execute a first group of codes comprising at least one code if the first CPU is operating to perform a first function; and (c) applying the second CPU to execute a second group of codes comprising at least one code if the second CPU is operating to perform the first function. The first group of codes is optimized for the first CPU, the second group of codes is optimized for the second CPU and the first group of codes comprises at least one code different from the code for the second group of codes.

Abstract: A manufacturing process of a thermoelectric conversion element is provided, which is characterized of applying the semiconductor technology to construct the thermoelectric conversion element with a nano/micro gap to reduce the heat conduction coefficient of the thermoelectric conversion element, so as to significantly enhance the thermoelectric conversion efficiency of the thermoelectric conversion element. In addition, by adding a nano additive in the nano/micro gap of the thermoelectric conversion element, the conductivity of the thermoelectric conversion element can be increased and the efficiency of the heat power conversion can further be promoted.

Abstract: A technique, as well as select implementations thereof, pertaining to dynamic adjustment of speed of memory is described. The technique may involve obtaining information indicative of memory transactions associated with a memory device from an external memory interface coupled to the memory device. The technique may also involve determining a runtime bandwidth of the memory device according to the memory transactions. The technique may further involve comparing the runtime bandwidth of the memory device to at least one threshold bandwidth. The technique may additionally involve adjusting the speed of the memory device according to a result of the comparing.

Abstract: A manufacturing process of the thermoelectric conversion element is provided, wherein the system using semiconductor process technology to the construction of the thermoelectric conversion element nanoscale thermoelectric effect to increase, and the use of different type and surface state of the sample to increase the thermoelectric conversion element thermoelectric figure of merit. Through the use of a specific thickness of deposition of nanostructures on a nanoscale roughening of the substrate cannot affect the conductivity of thermoelectric materials under, and also can improve the Seebeck coefficient and lower thermal conductivity in order o significantly enhance the thermoelectric figure of merit.

Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.