Patents by Inventor Hang-woo Lee

Hang-woo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040135490
    Abstract: A field emission device for displaying images with good quality is provided. The field emission device includes an anode plate, an anode electrode and a phosphor layer are formed inside of the anode plate, a cathode plate, a plurality of electron emission sources for emitting electrons which correspond to the phosphor layer and a gate electrode having gate holes through which the electrons pass are formed inside of the cathode plate, a mesh grid which is provided between the cathode plate and the anode plate and in which a plurality of electron-controlling holes are formed in a region corresponding to the gate holes, a spacer which supports the mesh grid between the anode plate and the mesh grid, and insulating layers which are formed on both sides of the mesh grid and have windows through which the plurality of electron-controlling holes are exposed and which correspond to a region where the plurality of electron-controlling holes are formed.
    Type: Application
    Filed: December 24, 2003
    Publication date: July 15, 2004
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Hang-woo Lee, Jong-min Kim, Pil-soo Ahn
  • Publication number: 20040124756
    Abstract: A field emission device is provided. The field emission device includes a substrate, a cathode electrode formed on the substrate, a gate insulating layer which is formed on the cathode electrode and has a through hole corresponding to part of the cathode electrode, a gate electrode which has a gate hole corresponding to the through hole and is formed on the gate insulating layer, and an emitter formed on the gate electrode exposed to the bottom of the through hole. The emitter has a stack structure formed of a resistive material layer and an electron emission material layer containing a fine electron emission source formed on the resistive material layer.
    Type: Application
    Filed: December 16, 2003
    Publication date: July 1, 2004
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Jeong-Hee Lee, Hang-Woo Lee, Shang-Hyeun Park, You-Jong Kim
  • Publication number: 20040080260
    Abstract: Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.
    Type: Application
    Filed: October 17, 2003
    Publication date: April 29, 2004
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Shang-hyeun Park, Hang-woo Lee, You-jong Kim, Pil-soo Ahn
  • Patent number: 6699642
    Abstract: A method of manufacturing a field emitter array using carbon nanotubes, low voltage field emission material, is provided. The method includes the steps of (a) forming a conductive thin film layer on the top of a transparent substrate having a transparent electrode and exposing a predetermined portion of the transparent electrode; (b) forming an opaque thin film layer on the exposed predetermined portion of the transparent electrode; (c) depositing an insulation material on the entire top surface of the transparent substrate and removing the insulation material from the top surfaces of the conductive thin film layer and the opaque thin film layer, thereby forming an insulation layer; (d) forming a gate layer on the top of the insulation layer; and (e) removing the opaque thin film layer and forming carbon nanotube tips on the top of the exposed transparent electrode.
    Type: Grant
    Filed: January 4, 2002
    Date of Patent: March 2, 2004
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Deuk-seok Chung, Jong-min Kim, Shang-hyeun Park, Nae-sung Lee, Hang-woo Lee
  • Publication number: 20040027052
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
    Type: Application
    Filed: August 7, 2003
    Publication date: February 12, 2004
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Patent number: 6632114
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
    Type: Grant
    Filed: January 5, 2001
    Date of Patent: October 14, 2003
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20030141495
    Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device includes a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer. An alignment error between the gate electrode and the cathode is removed, and carbon nanotube paste is prevented from remaining during development, thereby preventing current leakage and short circuit between the electrodes and diode emission.
    Type: Application
    Filed: January 22, 2003
    Publication date: July 31, 2003
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Hang-Woo Lee, Sang-Jin Lee, Shang-Hyeun Park
  • Publication number: 20030027478
    Abstract: A method of fabricating a field emission display employing carbon nanotubes (CNTs) as electron emitters is provided. The method includes forming a cathode on a substrate; forming a gate insulation layer having a plurality of gate holes on the cathode; forming a gate electrode having a plurality of via-holes corresponding to the gate holes, respectively, on the gate insulation layer; forming a plurality of conductive columns higher than the gate electrode on the cathode within the respective gate holes; adhering the CNTs to the bottom of a plate template which is separately provided; bringing the bottom of the template having the CNTs to contact the tops of the conductive columns to adhere the CNTs to the tops of the conductive columns; and firing the conductive columns to lower the levels thereof.
    Type: Application
    Filed: August 2, 2002
    Publication date: February 6, 2003
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Shang-Hyeun Park, Deuk-Seok Chung, Hang-Woo Lee
  • Patent number: 6468916
    Abstract: A method of forming a micro structure having nano-sized surface features is provided. The method includes the steps of forming a micro structure having predetermined size and shape on a substrate, coating a carbon polymer layer on the substrate including the micro structure to a predetermined thickness, performing a first etch on the carbon polymer layer by means of plasma etching using a reactive gas in which O2 gas for etching the carbon polymer layer and a gas for etching the micro structure are mixed and forming a mask layer by the residual carbon polymer layer on the surface of the micro structure, and performing a second etch by means of plasma etching using the mixed reactive gas to remove the mask layer and etch the surface of the micro structure not covered by the mask layer so that the micro structure has nano-sized surface features.
    Type: Grant
    Filed: January 5, 2001
    Date of Patent: October 22, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20020094494
    Abstract: A method of manufacturing a field emitter array using carbon nanotubes, low voltage field emission material, is provided. The method includes the steps of (a) forming a conductive thin film layer on the top of a transparent substrate having a transparent electrode and exposing a predetermined portion of the transparent electrode; (b) forming an opaque thin film layer on the exposed predetermined portion of the transparent electrode; (c) depositing an insulation material on the entire top surface of the transparent substrate and removing the insulation material from the top surfaces of the conductive thin film layer and the opaque thin film layer, thereby forming an insulation layer; (d) forming a gate layer on the top of the insulation layer; and (e) removing the opaque thin film layer and forming carbon nanotube tips on the top of the exposed transparent electrode.
    Type: Application
    Filed: January 4, 2002
    Publication date: July 18, 2002
    Applicant: Samsung SDI Co,. Ltd.
    Inventors: Deuk-seok Chung, Jong-min Kim, Shang-hyeun Park, Nae-sung Lee, Hang-woo Lee
  • Patent number: 6339281
    Abstract: A method for fabricating a triode field emitter array using carbon nanotubes having excellent electron emission characteristics is provided. In the method for fabricating a triode-structure carbon nanotube field emitter array, a catalyst layer is formed on a cathode electrode without forming a base layer, and carbon nanotubes are grown on the catalyst layer using a Spind't process. In this method, a non-reactive layer is formed on a catalyst layer outside the micro-cavity such that the carbon nanotubes can be grown only on the catalyst within the micro-cavity. Accordingly, even through a separation layer is etched and removed, since carbon nanotubes do not exist outside the micro-cavity, it does not happen that carbon nanotubes are drifted into the micro-cavities. Therefore, the fabrication yield is increased, and the fabrication cost is decreased.
    Type: Grant
    Filed: January 5, 2001
    Date of Patent: January 15, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Hang-woo Lee, Nae-sung Lee, Yong-soo Choi, Jong-min Kim
  • Patent number: 6307665
    Abstract: An acousto-optic modulator including an ultrasonic medium for controlling light from an optical source through diffraction, two transducers each having one electrode formed on one side thereof, the electrodes being for generating an acousto-elastic wave, and a conductive adhesive layer interposed between the ultrasonic medium and each of the sides of the transducers opposite to the sides on which the electrodes are installed, in order to adhere each of the transducers to the ultrasonic medium.
    Type: Grant
    Filed: March 22, 1999
    Date of Patent: October 23, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-hoon Kim, Hang-woo Lee
  • Publication number: 20010007783
    Abstract: A method for fabricating a triode field emitter array using carbon nanotubes having excellent electron emission characteristics is provided. In the method for fabricating a triode-structure carbon nanotube field emitter array, a catalyst layer is formed on a cathode electrode without forming a base layer, and carbon nanotubes are grown on the catalyst layer using a Spind't process. In this method, a non-reactive layer is formed on a catalyst layer outside the micro-cavity such that the carbon nanotubes can be grown only on the catalyst within the micro-cavity. Accordingly, even though a separation layer is etched and removed, since carbon nanotubes do not exist outside the micro-cavity, it does not happen that carbon nanotubes are drifted into the micro-cavities. Therefore, the fabrication yield is increased, and the fabrication cost is decreased.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 12, 2001
    Inventors: Hang-woo Lee, Nae-sung Lee, Yong-soo Choi, Jong-min Kim
  • Publication number: 20010006851
    Abstract: A method of forming a micro structure having nano-sized surface features is provided. The method includes the steps of forming a micro structure having predetermined size and shape on a substrate, coating a carbon polymer layer on the substrate including the micro structure to a predetermined thickness, performing a first etch on the carbon polymer layer by means of plasma etching using a reactive gas in which O2 gas for etching the carbon polymer layer and a gas for etching the micro structure are mixed and forming a mask layer by the residual carbon polymer layer on the surface of the micro structure, and performing a second etch by means of plasma etching using the mixed reactive gas to remove the mask layer and etch the surface of the micro structure not covered by the mask layer so that the micro structure has nano-sized surface features.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 5, 2001
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20010006325
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 5, 2001
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20010006321
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 5, 2001
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Patent number: 6088150
    Abstract: A 3-channel modulation system for a high power laser and a modulation method for a high power laser are disclosed herein. In a preferred implementation, the modulation system includes a laser light source, a light modulator modulating the light generated from the laser light source and including a pair of electrodes having a predetermined area disposed on one side of the light modulator, an image signal generating sub-system, a drive circuit sub-system for operating the electrodes so that the image signal being generated from the image signal generating sub-system is provided through the electrodes to the light modulator, a first cylindrical lens positioned between the laser light source and the light modulator so that the area and form of the light generated from the laser light source are modified and the modified light enters the light modulator, and a second cylindrical lens positioned at an output side of the light modulator to modify the area and form of the light modulated by the light modulator.
    Type: Grant
    Filed: April 15, 1998
    Date of Patent: July 11, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Hoon Kim, Seung Nam Cha, Hang Woo Lee
  • Patent number: 5900966
    Abstract: An acousto-optic modulator having an ultrasonic medium for controlling light from a light source by diffracting the light and a transducer portion having electrodes for generating an acoustic wave in the ultrasonic medium, wherein the transducer portion includes two transducers each having an electrode. The AOM is provided with two electrodes by using two transducers, thereby facilitating impedance matching with a driver. The two transducers may be installed so that their polarization directions are opposite to each other, thereby obtaining maximum power transfer to the ultrasonic medium.
    Type: Grant
    Filed: August 15, 1997
    Date of Patent: May 4, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-hoon Kim, Hang-woo Lee
  • Patent number: 5671232
    Abstract: A second harmonic generation apparatus provides a polarization element transmitting only light polarized in an extra-ordinary axis direction on the proceeding path of a second harmonic emitted from a resonator. The light polarized in the extra-ordinary axis direction is transmitted to a beam splitter, and a part of the polarized light is fed back to a feedback circuit, so that the temperature of a non-linear birefringent crystalline element inside resonator can be stably controlled and the output second harmonic can be stably produced.
    Type: Grant
    Filed: August 29, 1995
    Date of Patent: September 23, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hang-woo Lee, Sang-hak Lee, Joseph Kilwhoan Chee, Young-mo Hwang, Yurij V. Tsvetkov, Alexander V. Semenenko, Ivan I. Kuratev
  • Patent number: 5577059
    Abstract: A second harmonic generation method and apparatus is capable of stabilizing an output. The apparatus provides a first beam splitter on the proceeding path of a second harmonic output, and other beam splitters on the proceeding path of the reflecting beam of the second harmonic and that of the transmitted beam. A second and third beam splitters are arranged on the proceeding paths of the second harmonic output and the beam separated from the second harmonic output to satisfy ##EQU1## where K is a constant, R.sub..parallel. is reflectivity with respect to p-polarization parallel to the incident surface of the first and second beam splitter, and R.sub..perp. is reflectivity with respect to s-polarization perpendicular to the incident surface of the first and second beam splitters.
    Type: Grant
    Filed: August 29, 1995
    Date of Patent: November 19, 1996
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hang-woo Lee, Sang-hak Lee, Joseph K. Chee, Young-mo Hwang, Yurij V. Tsvetkov, Alexander V. Semenenko, Ivan I. Kuratev