Patents by Inventor Hang Yip Liu

Hang Yip Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8921166
    Abstract: A chip includes a number a plurality of functional areas of a layer and a number of dummy structures within the layer. The dummy structures are spaced from the functional areas. Each dummy structure has a size that is a function of the size and density of the functional areas.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: December 30, 2014
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Schmidt, Thomas Schafbauer, Hang Yip Liu, Yayi Wei
  • Publication number: 20130267048
    Abstract: A chip includes a number a plurality of functional areas of a layer and a number of dummy structures within the layer. The dummy structures are spaced from the functional areas. Each dummy structure has a size that is a function of the size and density of the functional areas.
    Type: Application
    Filed: May 31, 2013
    Publication date: October 10, 2013
    Inventors: Sebastian Schmidt, Thomas Schafbauer, Hang Yip Liu, Yayi Wei
  • Patent number: 8229062
    Abstract: A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: July 24, 2012
    Assignees: Infineon Technologies AG, United Microelectronics, Co
    Inventors: Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin
  • Publication number: 20110133304
    Abstract: A chip includes a number a plurality of functional areas of a layer and a number of dummy structures within the layer. The dummy structures are spaced from the functional areas. Each dummy structure has a size that is a function of the size and density of the functional areas.
    Type: Application
    Filed: December 28, 2010
    Publication date: June 9, 2011
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Sebastian Schmidt, Thomas Schafbauer, Hang Yip Liu, Yayi Wei
  • Patent number: 7868427
    Abstract: A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.
    Type: Grant
    Filed: January 13, 2009
    Date of Patent: January 11, 2011
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Schmidt, Hang-Yip Liu, Thomas Schafbauer, Yayi Wei
  • Publication number: 20100321656
    Abstract: A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
    Type: Application
    Filed: August 25, 2010
    Publication date: December 23, 2010
    Inventors: Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin
  • Patent number: 7807342
    Abstract: An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
    Type: Grant
    Filed: December 16, 2005
    Date of Patent: October 5, 2010
    Assignee: Infineon Technologies AG
    Inventors: Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin
  • Publication number: 20090124027
    Abstract: A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.
    Type: Application
    Filed: January 13, 2009
    Publication date: May 14, 2009
    Inventors: Sebastian Schmidt, Thomas Schafbauer, Hang Yip Liu, Yayi Wei
  • Patent number: 7494930
    Abstract: A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: February 24, 2009
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Schmidt, Thomas Schafbauer, Hang Yip Liu, Yayi Wei
  • Patent number: 7071074
    Abstract: A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.
    Type: Grant
    Filed: September 24, 2003
    Date of Patent: July 4, 2006
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Schmidt, Thomas Schafbauer, Hang Yip Liu, Yayi Wei
  • Patent number: 7052808
    Abstract: An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
    Type: Grant
    Filed: February 11, 2003
    Date of Patent: May 30, 2006
    Assignees: Infineon Technologies AG, United Microelectronics Co.
    Inventors: Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin
  • Publication number: 20040157135
    Abstract: An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
    Type: Application
    Filed: February 11, 2003
    Publication date: August 12, 2004
    Inventors: Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin