Patents by Inventor Hangle GUO

Hangle GUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12261225
    Abstract: Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrode and drain electrode layer includes a source electrode and a drain electrode that are spaced; and the protective layer is disposed between the channel layer and the source electrode and drain electrode layer, and is in contact with both the source electrode and drain electrode layer and the channel layer; an orthographic projection of the protective layer on the base substrate covers an orthographic projection of the channel layer on the base substrate; and the protective layer includes a first portion, a second portion, and a third portion that are in different areas of the protective layer.
    Type: Grant
    Filed: December 1, 2020
    Date of Patent: March 25, 2025
    Assignees: FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Bin Lin, Zengrong Li, Hangle Guo, Zhenyou Zou, Liangliang Li, Fadian Le
  • Publication number: 20240234440
    Abstract: Disclosed is a preparation method for an array substrate including: forming a first conductive portion on a substrate; sequentially forming a first insulating layer, a second insulating layer and a third insulating layer on the side of the first conductive portion that faces away from the substrate; forming, through one-time patterning process, a first sub-via that penetrates through the third insulating layer, the second insulating layer and a first part of the first insulating layer; forming a fourth insulating layer on the side of the third insulating layer that faces away from the substrate; etching and removing the fourth insulating layer and the first insulating layer of the second thickness that are at the first sub-via, so as to form a first via; and forming a first connection electrode on the side of the fourth insulating layer that faces away from the substrate.
    Type: Application
    Filed: July 1, 2022
    Publication date: July 11, 2024
    Inventors: Bin LIN, Yang WANG, Liangliang LI, Zengrong LI, Hangle GUO, Wenxing XI
  • Publication number: 20240170579
    Abstract: Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrode and drain electrode layer includes a source electrode and a drain electrode that are spaced; and the protective layer is disposed between the channel layer and the source electrode and drain electrode layer, and is in contact with both the source electrode and drain electrode layer and the channel layer; an orthographic projection of the protective layer on the base substrate covers an orthographic projection of the channel layer on the base substrate; and the protective layer includes a first portion, a second portion, and a third portion that are in different areas of the protective layer.
    Type: Application
    Filed: December 1, 2020
    Publication date: May 23, 2024
    Inventors: Bin Lin, Zengrong Li, Hangle Guo, Zhenyou Zou, Liangliang Li, Fadian Le
  • Publication number: 20220302285
    Abstract: A method for manufacturing a thin film transistor is provided. The method includes: sequentially forming a semiconductor thin film, a patterned source-drain layer and a conductive thin film on a base substrate, performing a patterning process on the semiconductor thin film and the conductive thin film simultaneously to acquire an active layer and a protective electrode layer, and processing the protective electrode layer such that a portion of the protective electrode layer covering the source is insulated from a portion of the protective electrode layer covering the drain.
    Type: Application
    Filed: March 11, 2022
    Publication date: September 22, 2022
    Inventors: Bin LIN, Fadian LE, Wanxia FU, Zhenyou ZOU, Hangle GUO, Liangliang LI