Patents by Inventor Hanh D. Nguyen
Hanh D. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11492873Abstract: Non-aqueous drilling fluids may be removed from a wellbore or tubing nor casing within the wellbore by introducing into the well a biodegradable aqueous fluid comprising banana.Type: GrantFiled: September 3, 2020Date of Patent: November 8, 2022Assignee: Baker Hughes Oilfield Operations, LLCInventors: Angela Anh Doan, Violeta Ramos-Edwards, Andrew Christopher Holley, Hanh D. Nguyen
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Publication number: 20220065075Abstract: Non-aqueous drilling fluids may be removed from a wellbore or tubing nor casing within the wellbore by introducing into the well a biodegradable aqueous fluid comprising banana.Type: ApplicationFiled: September 3, 2020Publication date: March 3, 2022Inventors: Angela Anh Doan, Violeta Ramos-Edwards, Andrew Christopher Holley, Hanh D. Nguyen
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Publication number: 20200149166Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: ApplicationFiled: January 16, 2020Publication date: May 14, 2020Inventors: Kien N. CHUC, Qiwei LIANG, Hanh D. NGUYEN, Xinglong CHEN, Matthew MILLER, Soonam PARK, Toan Q. TRAN, Adib M. KHAN, Jang-Gyoo YANG, Dmitry LUBOMIRSKY, Shankar VENKATARAMAN
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Patent number: 10550472Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: GrantFiled: September 9, 2014Date of Patent: February 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
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Patent number: 9416450Abstract: Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.Type: GrantFiled: October 11, 2013Date of Patent: August 16, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Hanh D. Nguyen, Joe Griffith Cruz
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Patent number: 9206512Abstract: In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.Type: GrantFiled: June 21, 2012Date of Patent: December 8, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Hanh D. Nguyen, Majeed A. Foad, Dieter Haas, Karl J. Armstrong, Xiaoxiong Yuan
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Patent number: 8999106Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.Type: GrantFiled: December 19, 2007Date of Patent: April 7, 2015Assignee: Applied Materials, Inc.Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark
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Publication number: 20150013793Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: ApplicationFiled: September 9, 2014Publication date: January 15, 2015Inventors: Kien N. CHUC, Qiwei LIANG, Hanh D. NGUYEN, Xinglong CHEN, Matthew MILLER, Soonam PARK, Toan Q. TRAN, Adib KHAN, Jang-Gyoo YANG, Dmitry LUBOMIRSKY, Shankar VENKATARAMAN
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Patent number: 8894767Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: GrantFiled: July 15, 2010Date of Patent: November 25, 2014Assignee: Applied Materials, Inc.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
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Publication number: 20140113084Abstract: Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.Type: ApplicationFiled: October 11, 2013Publication date: April 24, 2014Applicant: APPLIED MATERIALS, INC.Inventors: HANH D. NGUYEN, JOE GRIFFITH CRUZ
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Publication number: 20120325149Abstract: In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.Type: ApplicationFiled: June 21, 2012Publication date: December 27, 2012Applicant: APPLIED MATERIALS, INC.Inventors: HANH D. NGUYEN, MAJEED A. FOAD, DIETER HAAS, KARL J. ARMSTRONG, XIAOXIONG YUAN
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Publication number: 20120164845Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.Type: ApplicationFiled: March 8, 2012Publication date: June 28, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Wei Liu, Johanes S. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
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Patent number: 8137463Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.Type: GrantFiled: December 19, 2007Date of Patent: March 20, 2012Assignee: Applied Materials, Inc.Inventors: Wei Liu, Johanes S. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
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Patent number: 8062472Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.Type: GrantFiled: December 19, 2007Date of Patent: November 22, 2011Assignee: Applied Materials, Inc.Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
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Publication number: 20110011338Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: ApplicationFiled: July 15, 2010Publication date: January 20, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
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Publication number: 20090159425Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
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Publication number: 20090162952Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark
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Publication number: 20090162570Abstract: The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Johanes F. Swenberg, Wei Liu, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark, Theresa Kramer Guarini, Woong Choi
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Publication number: 20090159424Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Wei Liu, Johanes S. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
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Publication number: 20030017268Abstract: In one aspect of the present invention there is provided a method of improving the uniformity of a titanium nitride film, comprising the steps of introducing TiCl4 gas to a chemical vapor deposition chamber from the center of a chamber lid wherein said chamber lid has a blocker plate; introducing NH3 gas to the chemical vapor deposition chamber simultaneously from both the center and edge of the chamber lid thereby distributing the TiCl4 gas and the NH3 gas uniformly across a surface of a wafer; and depositing a titanium nitride film by chemical vapor deposition onto the surface of the wafer where the uniform distribution of the TiCl4 gas and the NH3 gas yields a titanium nitride film with improved uniformity. The chamber is provided with two pumping channels positioned on either side of the chamber.Type: ApplicationFiled: July 18, 2001Publication date: January 23, 2003Applicant: Applied Materials, Inc.Inventors: Jianhua Hu, Hanh D. Nguyen, Steve H. Chiao, Xiaoxiong Yuan, Anzhong Chang, Hongbee Teoh, Avgerinos Gelatos