Abstract: A reverse conducting insulated gate bipolar transistor (IGBT) power device includes at least one cell. The cell includes: an electric field region of a first conductivity type, a front structure disposed on a front side of the electric field region, and a collector structure disposed on a back side of the electric field region. The collector structure includes: a first collector layer of the first conductivity type; a second collector layer of a second conductivity type; a collector insertion layer; a collector interconnection portion; and a collector. The second collector layer and the first collector layer are disposed on a lower surface of the electric field region and connected to the collector, the second collector layer is in contact with the first collector layer, and the collector insertion layer is disposed in the electric field region and connected to the second collector layer by the collector interconnection portion.