Patents by Inventor Hani S. Attalla

Hani S. Attalla has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8624615
    Abstract: The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor configured for connection to a supply voltage via a first terminal; a register connected to the first transistor; a second transistor in parallel with a resistor, wherein the second transistor is configured for connection to the first terminal, with a gate of the second transistor configured for connection to an output of the register; and wherein the second transistor is configured for connection to a second terminal, the second transistor having a state that depends on a status of the register.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: January 7, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Hani S. Attalla, Daniel P. Cram
  • Publication number: 20120001680
    Abstract: The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor configured for connection to a supply voltage via a first terminal; a register connected to the first transistor; a second transistor in parallel with a resistor, wherein the second transistor is configured for connection to the first terminal, with a gate of the second transistor configured for connection to an output of the register; and wherein the second transistor is configured for connection to a second terminal, the second transistor having a state that depends on a status of the register.
    Type: Application
    Filed: August 16, 2011
    Publication date: January 5, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Hani S. Attalla, Daniel P. Cram
  • Patent number: 8004297
    Abstract: The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor configured for connection to a supply voltage via a first terminal; a register connected to the first transistor; a second transistor in parallel with a resistor, wherein the second transistor is configured for connection to the first terminal, with a gate of the second transistor configured for connection to an output of the register; and wherein the second transistor is configured for connection to a second terminal, the second transistor having a state that depends on a status of the register.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: August 23, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Hani S. Attalla, Daniel P. Cram
  • Publication number: 20090212810
    Abstract: The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor configured for connection to a supply voltage via a first terminal; a register connected to the first transistor; a second transistor in parallel with a resistor, wherein the second transistor is configured for connection to the first terminal, with a gate of the second transistor configured for connection to an output of the register; and wherein the second transistor is configured for connection to a second terminal, the second transistor having a state that depends on a status of the register.
    Type: Application
    Filed: May 7, 2009
    Publication date: August 27, 2009
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Hani S. Attalla, Daniel P. Cram
  • Patent number: 7541825
    Abstract: The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor having its source connected to a first terminal, wherein the first terminal connects a supply voltage to the source of the first transistor; a register connected to the drain of the first transistor; and a second transistor in parallel with a resistor, the gate of the second transistor is connected to an output of the register and a source of the second transistor is connected to the first terminal. In various embodiments, the drain of the second transistor is connected to a second terminal and the state of the second transistor depends on whether the register is loaded.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: June 2, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Hani S. Attalla, Daniel P. Cram
  • Publication number: 20080191728
    Abstract: The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor having its source connected to a first terminal, wherein the first terminal connects a supply voltage to the source of the first transistor; a register connected to the drain of the first transistor; and a second transistor in parallel with a resistor, the gate of the second transistor is connected to an output of the register and a source of the second transistor is connected to the first terminal. In various embodiments, the drain of the second transistor is connected to a second terminal and the state of the second transistor depends on whether the register is loaded.
    Type: Application
    Filed: September 28, 2006
    Publication date: August 14, 2008
    Inventors: Hani S. Attalla, Daniel P. Cram
  • Patent number: 7274201
    Abstract: A method and system for testing a plurality of semiconductor dice on a semiconductor wafer during burn-in includes forming a plurality of semiconductor dice with each die including an integrated circuit and built-in self stress circuitry coupled thereto. The built-in self stress circuitry includes contacts coupled thereto that are configured for probing by a probe card on a burn-in tester. The built-in self stress circuitry, through an interface with the integrated circuit, generates signals for exercising the operation of the integrated circuit during burn-in testing. Each of the plurality of semiconductor dice on the semiconductor wafer are individually controllable by the burn-in tester.
    Type: Grant
    Filed: May 19, 2005
    Date of Patent: September 25, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Hani S. Attalla, Mark Bunn