Abstract: Embodiments of an apparatus for coating a plurality of gas lines are provided herein. In some embodiments, an apparatus for coating a plurality of gas lines via an ALD process includes: an oven having an enclosure that defines an interior volume configured to house the plurality of gas lines, the enclosure having a door configured for transferring the plurality of gas lines into and out of the interior volume; a plurality of inlet ports disposed through a first wall of the enclosure; a plurality of exhaust ports disposed through a second wall of the enclosure; a fluid panel disposed outside of the oven and coupled to the plurality of inlet ports via corresponding ones of a plurality of fluid distribution assemblies; and a foreline disposed outside of the oven and coupled to the plurality of exhaust ports.

Abstract: Embodiments of part coating reactors are provided herein. In some embodiments, a part coating reactor includes a lid assembly, comprising: a body that includes a central region and a peripheral region, wherein the body includes a central opening in the central region, a first annular heater groove disposed radially outward of the central opening, and a second annular heater groove disposed radially outward of the first annular heater groove, wherein the peripheral region includes a plurality of vertical slots that extend from an upper surface of the body, and wherein a lower surface of the body includes an annular alignment groove; and a blocker plate including a substantially flat plate having a plurality of holes disposed therethrough and an annular wall extending above and below the flat plate, wherein an upper surface of the annular wall is disposed in the annular alignment groove of the body.

Abstract: Embodiments of heated lids for a process chamber are provided herein. In some embodiments, a heated lid includes: a body having a central region and a peripheral region, wherein the body includes a central opening in the central region, wherein the peripheral region includes a plurality of vertical slots that extend into an upper surface of the body and arranged along a circle to provide a thermal break, and wherein the body includes one or more annular plenums that extend into the upper surface of the body and a plurality of holes extending through a bottom surface of the one or more annular plenums to a lower surface of the body; a first heater ring having one or more heating elements disposed therein, wherein the first heater ring is coupled to the central region of the body; and a second heater ring having one or more heating elements disposed therein.

Abstract: Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a part coating reactor includes: a lower body and a lid assembly that together define and enclose an interior volume; one or more heaters disposed in the lid assembly; one or more coolant channels disposed in the lid assembly to flow a heat transfer medium therethrough; a plurality of gas passages disposed through the lid assembly to facilitate providing one or more gases to the interior volume, wherein the plurality of gas passages include a plurality of fluidly independent plenums disposed in the lid assembly; and one or more mounting brackets to facilitate coupling a workpiece to the lid assembly.

Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

Abstract: Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

Abstract: Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.

Abstract: Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100° C. during substrate processing.

Abstract: The present disclosure generally relates to generally relates to equipment for performing semiconductor device fabrication, and more particularly, to a cover ring for partially covering a surface of a substrate support in high-density plasma chemical vapor deposition processing. In one embodiment, the cover ring may include an annular body, an inner support block with a beveled first edge for stability, one or more thermal breaks to increase thermal movement towards the outer diameter, a rounded shoulder to prevent particle deposition, an outer lip configured to a substrate support pedestal, a vertical appendage to support the substrate, and a thermally conductive coating disposed on the annular ring to direct thermal conductivity towards the outer edge of the ring and prevent particle accumulation.

Abstract: Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100° C. during substrate processing.

Abstract: Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant channel and a return channel of the coolant channel embedded therein. Each of the supply channel and the return channel is a helix in the tubular wall. The helical supply channel and the helical return channel have the same direction of rotation and are parallel to each other. The supply channel and the return channel are interleaved in the tubular wall. With the supply channel and return channel interleaved in the metal shield, the thermal gradient in the metal shield is reduced.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

Abstract: Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100° C. during substrate processing.

Abstract: Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.

Abstract: The present disclosure generally relates to generally relates to equipment for performing semiconductor device fabrication, and more particularly, to a cover ring for partially covering a surface of a substrate support in high-density plasma chemical vapor deposition processing. In one embodiment, the cover ring may include an annular body, an inner support block with a beveled first edge for stability, one or more thermal breaks to increase thermal movement towards the outer diameter, a rounded shoulder to prevent particle deposition, an outer lip configured to a substrate support pedestal, a vertical appendage to support the substrate, and a thermally conductive coating disposed on the annular ring to direct thermal conductivity towards the outer edge of the ring and prevent particle accumulation.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.