Patents by Inventor Han-Jin Lim
Han-Jin Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230361161Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: ApplicationFiled: July 6, 2023Publication date: November 9, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Han Jin LIM, Ki Nam KIM, Hyung Suk JUNG, Kyoo Ho JUNG, Ki Hyun HWANG
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Publication number: 20230352548Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.Type: ApplicationFiled: July 7, 2023Publication date: November 2, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eunae CHO, Dongjin LEE, Ji Eun LEE, Kyoung-Ho JUNG, Dong Su KO, Yongsu KIM, Jiho YOO, Sung HEO, Hyun PARK, Satoru YAMADA, Moonyoung JEONG, Sungjin KIM, Gyeongsu PARK, Han Jin LIM
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Patent number: 11737277Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.Type: GrantFiled: November 10, 2021Date of Patent: August 22, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hoon Choi, Sung Gil Kim, Seulye Kim, Jung Ho Kim, Hong Suk Kim, Phil Ouk Nam, Jae Young Ahn, Han Jin Lim
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Patent number: 11735637Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.Type: GrantFiled: August 12, 2021Date of Patent: August 22, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eunae Cho, Dongjin Lee, Ji Eun Lee, Kyoung-Ho Jung, Dong Su Ko, Yongsu Kim, Jiho Yoo, Sung Heo, Hyun Park, Satoru Yamada, Moonyoung Jeong, Sungjin Kim, Gyeongsu Park, Han Jin Lim
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Patent number: 11728372Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: GrantFiled: April 6, 2022Date of Patent: August 15, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
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Publication number: 20230225102Abstract: A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.Type: ApplicationFiled: October 13, 2022Publication date: July 13, 2023Inventors: Intak JEON, Han Jin LIM
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Publication number: 20230212749Abstract: A device for manufacturing a semiconductor device is provided. The device for manufacturing a semiconductor device includes a tube extending in a first direction, and defining a reaction space therein and configured to accommodate a boat that is configured to receive a plurality of substrates therein, and first and second nozzles each extending in the first direction inside the tube, and being apart from each other on a plane that is perpendicular to the first direction and parallel to upper surfaces of the substrates, wherein the first and second nozzles include a plurality of first injection ports and a plurality of first second injection ports that are configured inject different gases toward a center of the reaction space, respectively, and a plurality of second injection ports are placed in a region between a corresponding pair of adjacent ones of the plurality of first injection ports along the first direction.Type: ApplicationFiled: December 1, 2022Publication date: July 6, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jung Min PARK, Su Hwan Kim, Han Jin LIM
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Publication number: 20230061185Abstract: A semiconductor device is provided. The semiconductor device comprises a lower electrode, a lower dielectric layer on the lower electrode, an upper electrode on the lower dielectric layer, an upper dielectric layer formed between the lower dielectric layer and the upper electrode, and an interposed electrode film formed between the lower dielectric layer and the upper dielectric layer, wherein the upper dielectric layer includes titanium oxide.Type: ApplicationFiled: March 30, 2022Publication date: March 2, 2023Inventors: Intak JEON, Han Jin LIM, Hyung Suk JUNG, Jae Hyoung CHOI
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Publication number: 20220336574Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.Type: ApplicationFiled: June 30, 2022Publication date: October 20, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Sang Yeol KANG, Kyu Ho CHO, Han Jin LIM, Cheol Seong HWANG
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Patent number: 11411069Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.Type: GrantFiled: September 24, 2020Date of Patent: August 9, 2022Assignees: Samsung Electronics Co., Ltd., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Sang Yeol Kang, Kyu Ho Cho, Han Jin Lim, Cheol Seong Hwang
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Publication number: 20220238641Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.Type: ApplicationFiled: August 26, 2021Publication date: July 28, 2022Inventors: Jung Min Park, Han Jin Lim, Kyoo Ho Jung, Cheol Jin Cho
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Publication number: 20220231117Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: ApplicationFiled: April 6, 2022Publication date: July 21, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Han Jin LIM, Ki Nam KIM, Hyung Suk JUNG, Kyoo Ho JUNG, Ki Hyun HWANG
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Patent number: 11322578Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: GrantFiled: October 2, 2019Date of Patent: May 3, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
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Publication number: 20220068968Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.Type: ApplicationFiled: November 10, 2021Publication date: March 3, 2022Inventors: Ji Hoon CHOI, Sung Gil KIM, Seulye KIM, Jung Ho KIM, Hong Suk KIM, Phil Ouk NAM, Jae Young AHN, Han Jin LIM
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Publication number: 20210376099Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.Type: ApplicationFiled: August 12, 2021Publication date: December 2, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Eunae Cho, Dongjin Lee, Ji Eun Lee, Kyoung-Ho Jung, Dong Su Ko, Yongsu Kim, Jiho Yoo, Sung Heo, Hyun Park, Satoru Yamada, Moonyoung Jeong, Sungjin Kim, Gyeongsu Park, Han Jin Lim
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Patent number: 11189636Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.Type: GrantFiled: May 8, 2020Date of Patent: November 30, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hoon Choi, Sung Gil Kim, Seulye Kim, Jung Ho Kim, Hong Suk Kim, Phil Ouk Nam, Jae Young Ahn, Han Jin Lim
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Patent number: 11127828Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.Type: GrantFiled: June 5, 2019Date of Patent: September 21, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eunae Cho, Dongjin Lee, Ji Eun Lee, Kyoung-Ho Jung, Dong Su Ko, Yongsu Kim, Jiho Yoo, Sung Heo, Hyun Park, Satoru Yamada, Moonyoung Jeong, Sungjin Kim, Gyeongsu Park, Han Jin Lim
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Publication number: 20210140048Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: ApplicationFiled: January 20, 2021Publication date: May 13, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Sun-min MOON, Youn-soo KIM, Han-jin LIM, Yong-jae LEE, Se-hoon OH, Hyun-jun KIM, Jin-sun LEE
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Publication number: 20210020735Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.Type: ApplicationFiled: September 24, 2020Publication date: January 21, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Sang Yeol KANG, Kyu Ho CHO, Han Jin LIM, Cheol Seong HWANG
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Patent number: 10825889Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.Type: GrantFiled: June 20, 2018Date of Patent: November 3, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Yeol Kang, Kyu Ho Cho, Han Jin Lim, Cheol Seong Hwang