Patents by Inventor Hanmin Zhao
Hanmin Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9905730Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: GrantFiled: March 7, 2014Date of Patent: February 27, 2018Assignee: Lumileds LLCInventors: Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Colbentz, Anneli Munkholm, Hanmin Zhao
-
Patent number: 9224597Abstract: A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure on a sapphire substrate; thinning and polishing the sapphire substrate; coating a reflecting compound metal layer on the gallium nitride-based semiconductor multilayer structure by evaporating; coating a first glue on the reflecting compound metal layer and solidifying the first glue with a first temporary substrate; peeling the sapphire substrate off by laser; coating a second glue on the peeling surface and solidifying the second glue with a second temporary substrate; removing the first temporary substrate and the first glue; bonding the reflecting compound metal layer with a permanent substrate by eutectic bonding; removing the second temporary substrate and the second glue.Type: GrantFiled: November 19, 2013Date of Patent: December 29, 2015Assignees: Lattice Power (JIANGXI) Corporation, Shineon (Beijing) Technology Co., Ltd.Inventors: Hanmin Zhao, Hao Zhu, Chuanbing Xiong, Xiaodong Qu
-
Publication number: 20140183595Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: ApplicationFiled: March 7, 2014Publication date: July 3, 2014Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Patrick N. GRILLOT, Rafael I. ALDAZ, Deborah L. COLBENTZ, Anneli MUNKHOLM, Hanmin ZHAO
-
Publication number: 20140147987Abstract: A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure on a sapphire substrate; thinning and polishing the sapphire substrate; coating a reflecting compound metal layer on the gallium nitride-based semiconductor multilayer structure by evaporating; coating a first glue on the reflecting compound metal layer and solidifying the first glue with a first temporary substrate; peeling the sapphire substrate off by laser; coating a second glue on the peeling surface and solidifying the second glue with a second temporary substrate; removing the first temporary substrate and the first glue; bonding the reflecting compound metal layer with a permanent substrate by eutectic bonding; removing the second temporary substrate and the second glue.Type: ApplicationFiled: November 19, 2013Publication date: May 29, 2014Applicants: Shineon (Beijing) Technology Co., Ltd, Lattice Power (JIANGXI) CorporationInventors: Hanmin Zhao, Hao Zhu, Chuanbing Xiong, Xiaodong Qu
-
Patent number: 8692286Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: GrantFiled: December 14, 2007Date of Patent: April 8, 2014Assignee: Philips Lumileds Lighing Company LLCInventors: Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Coblentz, Anneli Munkholm, Hanmin Zhao
-
Patent number: 8174025Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.Type: GrantFiled: June 9, 2006Date of Patent: May 8, 2012Assignee: Philips Lumileds Lighting Company, LLCInventors: John E. Epler, Michael R. Krames, Hanmin Zhao, James C. Kim
-
Patent number: 7601989Abstract: In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.Type: GrantFiled: March 27, 2007Date of Patent: October 13, 2009Assignee: Philips Lumileds Lighting Company, LLCInventors: John E. Epler, Hanmin Zhao, Michael R. Krames
-
Publication number: 20090152584Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: ApplicationFiled: December 14, 2007Publication date: June 18, 2009Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: PATRICK N. GRILLOT, RAFAEL I. ALDAZ, DEBORAH L. COBLENTZ, ANNELI MUNKHOLM, HANMIN ZHAO
-
Patent number: 7457341Abstract: A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.Type: GrantFiled: February 23, 2006Date of Patent: November 25, 2008Assignee: JDS Uniphase CorporationInventors: Matthew Glenn Peters, Hanmin Zhao
-
Publication number: 20080237619Abstract: In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.Type: ApplicationFiled: March 27, 2007Publication date: October 2, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: John E. Epler, Hanmin Zhao, Michael R. Krames
-
Publication number: 20070284607Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.Type: ApplicationFiled: June 9, 2006Publication date: December 13, 2007Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: John E. Epler, Michael R. Krames, Hanmin Zhao, James C. Kim
-
Publication number: 20060187995Abstract: A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.Type: ApplicationFiled: February 23, 2006Publication date: August 24, 2006Applicant: JDS Uniphase CorporationInventors: Matthew Peters, Hanmin Zhao
-
Patent number: 6445723Abstract: A buried heterostructure (BH) laser source with a narrow active region is disclosed for use in close proximity with optically-addressed data storage media for read/write functionality in a relatively high data density format. The BH laser source is formed on a pregrooved or prepatterned substrate to form mesas upon which epitaxial layers are formed to form laser source active regions that have small emission apertures at the laser source facet output. Selective removal of semiconductor cladding material and replacement of this material with lower refractive index materials provides a way of obtaining further mode size-reduction at the output facet of the laser source. Each mesa has a top surface and adjacent sidewalls such that in the growth of the epitaxial layers above the active region doped with a first conductivity type, the above active region epitaxial layers depositing on the top surface deposit as a first conductivity type and depositing on said sidewalls deposit as a second conductivity type.Type: GrantFiled: May 18, 1999Date of Patent: September 3, 2002Assignee: JDS Uniphase CorporationInventors: Mehrdad Ziari, Scott D. DeMars, Edward C. Vail, Hanmin Zhao
-
Patent number: 5926493Abstract: Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.Type: GrantFiled: May 20, 1997Date of Patent: July 20, 1999Assignee: SDL, Inc.Inventors: Stephen O'Brien, Hanmin Zhao, Jo S. Major, Jr.