Patents by Inventor Han-Ming Wang

Han-Ming Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136546
    Abstract: A vacuum battery structural assembly and a vacuum multi-cell battery module composed thereof are provided and include a first repeating unit including a first frame plate and a second frame plate with respect to the first frame plate; and an electrolyte channel defined within the first frame plate and the second frame plate to accommodate a liquid electrolyte, wherein both a surface of the first frame plate and a surface of the second frame plate include a vacuum suction area, the vacuum suction area includes a vacuum aperture and a vacuum channel, wherein the vacuum aperture is formed on at least one surface of the first frame plate and the second frame plate, the vacuum channel is positioned inside the first frame plate and the second frame plate, and is configured to generate a longitudinal pressing suction force and seal the first frame plate and the second frame plate.
    Type: Application
    Filed: November 23, 2022
    Publication date: April 25, 2024
    Inventors: Hung-Hsien Ku, Shang-Qing Zhuang, Ning-Yih Hsu, Chien-Hong Lin, Han-Jou Lin, Yi-Hsin Hu, Po-Yen Chiu, Yao-Ming Wang
  • Publication number: 20240090236
    Abstract: A magnetic tunnel junction memory device includes a vertical stack of magnetic tunnel junction NOR strings located over a substrate. Each magnetic tunnel junction NOR string includes a respective semiconductor material layer that contains a semiconductor source region, a plurality of semiconductor channels, and a plurality of semiconductor drain regions, a plurality of magnetic tunnel junction memory cells having a respective first electrode that is located on a respective one of the plurality of semiconductor drain regions, and a metallic bit line contacting each second electrode of the plurality of magnetic tunnel junction memory cells. The vertical stack of magnetic tunnel junction NOR strings may be repeated along a channel direction to provide a three-dimensional magnetic tunnel junction memory device.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Inventors: Han-Jong CHIA, Bo-Feng YOUNG, Sai-Hooi YEONG, Chenchen Jacob WANG, Meng-Han LIN, Yu-Ming LIN
  • Patent number: 6254795
    Abstract: The present invention provides a texture measuring method of a hard disk plate. The method comprises performing a laser etching process to form a pinhole at each of a plurality of predetermined positions in a predetermined area on the hard disk plate, measuring the pinhole at each of the predetermined positions to obtain a first measurement value, performing a mechanical texturing process on the predetermined area of the hard disk plate to form circular textures on the predetermined area, and measuring the pinhole at each of the predetermined positions to obtain a second measurement value wherein the first and second measurement values are used to determine the extent of texturing performed on the predetermined area of the hard disk plate.
    Type: Grant
    Filed: March 8, 1999
    Date of Patent: July 3, 2001
    Assignee: Trace Storage Technology Corp.
    Inventors: An-Hung Tan, Chi-Chih Chen, Han-Ming Wang