Abstract: A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.

Abstract: An apparatus for controlling wafer uniformity is disclosed. In one example, the apparatus includes: a plurality of temperature control elements and a processor. Each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer. Each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer. The processor determines at least one portion of the wafer for temperature uniformity control, and instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer.

Abstract: A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.

Abstract: An apparatus for controlling wafer uniformity is disclosed. In one example, the apparatus includes: a plurality of temperature control elements and a processor. Each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer. Each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer. The processor determines at least one portion of the wafer for temperature uniformity control, and instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer.

Abstract: An apparatus for controlling wafer uniformity is disclosed. In one example, the apparatus includes: a plurality of temperature control elements and a processor. Each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer. Each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer. The processor determines at least one portion of the wafer for temperature uniformity control, and instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer.

Abstract: A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.

Abstract: The present disclosure provides a method for determining an applicability of a specific processing device having a specific processing pattern. The method includes the following steps: locating a similarity index between the specific processing pattern and a reference processing pattern of a reference processing device; and confirming the applicability of the specific processing device if the similarity index is no less than a threshold. Besides, a method for assessing an applicability of a new processing pattern for a specific processing device, and a method for determining an applicability of an alternative processing path for a reference processing path are also provided.

Abstract: The present disclosure provides a method for determining an applicability of a specific processing device having a specific processing pattern. The method includes the following steps: locating a similarity index between the specific processing pattern and a reference processing pattern of a reference processing device; and confirming the applicability of the specific processing device if the similarity index is no less than a threshold. Besides, a method for assessing an applicability of a new processing pattern for a specific processing device, and a method for determining an applicability of an alternative processing path for a reference processing path are also provided.

Abstract: A method and system for forming a semiconductor structure includes forming at least one material layer over a substrate. At least one portion of the material layer is etched with at least one first precursor, thereby defining at least one material pattern. Charges attached to the material pattern are removed with at least one discharge gas.

Abstract: A method and system for forming a semiconductor structure includes forming at least one material layer over a substrate. At least one portion of the material layer is etched with at least one first precursor, thereby defining at least one material pattern. Charges attached to the material pattern are removed with at least one discharge gas.