Abstract: Disclosed is an in-line processing control method and system. In one embodiment, the n method comprising: conducting a critical dimension (CD) inspection on a first wafer; generating a first CD map of the first wafer; determining a first temperature profile map and a first plasma processing configuration based on the first CD map of the first wafer, wherein the first plasma processing configuration comprises a first temperature profile map, a first etch time and a first plasma processing condition; and configuring a plasma etching process with the first plasma processing configuration for processing the first wafer.