Abstract: An integrated circuit containing a configurable dual n/p-channel 3-D resurf high voltage MOS field effect transistor (MOSFET) is disclosed. An n-channel drain is coterminous with a p-channel source in an n-well, and a p-channel drain is coterminous with an n-channel source in a p-well. A lateral drift region including n-type drift lanes and p-type drift lanes extends between the n and p wells. A resurf layer abuts the lateral drift region. The n-channel MOS gate is separate from the p-channel MOS gate. The p-channel MOS gate may be operated as a field plate in the n-channel mode, and vice versa. An n-channel MOS transistor may be integrated into the n-channel MOS source to provide an n-channel cascode transistor configuration, and similarly for a p-channel cascode configuration, to debias parasitic bipolar transistors under the MOS gates. Circuits using the MOSFET with various loads are also disclosed.

Abstract: A data communication method for semiconductor chips including transmitting load control data, pilot data and a transmission clock signal from a first semiconductor chip to one or more second semiconductor chips that are each coupled to one or more electrical loads, driving the electrical loads based on a timing defined by the load control data, deriving a transmission rate by dividing the transmission clock signal by a division factor prescribed by the pilot data, and transmitting diagnostic data at the transmission rate from the one or more second semiconductor chips to the first semiconductor chip.

Abstract: A data communication method for semiconductor chips including transmitting load control data, pilot data and a transmission clock signal from a first semiconductor chip to one or more second semiconductor chips that are each coupled to one or more electrical loads, driving the electrical loads based on a timing defined by the load control data, deriving a transmission rate by dividing the transmission clock signal by a division factor prescribed by the pilot data, and transmitting diagnostic data at the transmission rate from the one or more second semiconductor chips to the first semiconductor chip.

Abstract: An arrangement including a first semiconductor chip and a second semiconductor chip connected thereto, where the second semiconductor chip is additionally connected to electrical loads and drives these electrical loads on the basis of a timing which is prescribed to it by load control data, and where the first semiconductor chip transmits to the second semiconductor chip the aforementioned load control data and pilot data which control the second semiconductor chip, and where the second semiconductor chip transmits to the first semiconductor chip diagnostic data which represent states prevailing in the second semiconductor chip or events which occur. The diagnostic data are transmitted via a first transmission channel and the load control data and the pilot data are transmitted via a second transmission channel.

Abstract: An integrated circuit containing a configurable dual n/p-channel 3-D resurf high voltage MOS field effect transistor (MOSFET) is disclosed. An n-channel drain is coterminous with a p-channel source in an n-well, and a p-channel drain is coterminous with an n-channel source in a p-well. A lateral drift region including n-type drift lanes and p-type drift lanes extends between the n and p wells. A resurf layer abuts the lateral drift region. The n-channel MOS gate is separate from the p-channel MOS gate. The p-channel MOS gate may be operated as a field plate in the n-channel mode, and vice versa. An n-channel MOS transistor may be integrated into the n-channel MOS source to provide an n-channel cascode transistor configuration, and similarly for a p-channel cascode configuration, to debias parasitic bipolar transistors under the MOS gates. Circuits using the MOSFET with various loads are also disclosed.

Abstract: A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order thus to ensure a similar operating point of the individual inner cells in the well. Therefore, the disadvantages brought about by a voltage drop in the buried layer are ultimately overcome.

Abstract: An arrangement including a first semiconductor chip and a second semiconductor chip connected thereto, where the second semiconductor chip is additionally connected to electrical loads and drives these electrical loads on the basis of a timing which is prescribed to it by load control data, and where the first semiconductor chip transmits to the second semiconductor chip the aforementioned load control data and pilot data which control the second semiconductor chip, and where the second semiconductor chip transmits to the first semiconductor chip diagnostic data which represent states prevailing in the second semiconductor chip or events which occur. The diagnostic data are transmitted via a first transmission channel and the load control data and the pilot data are transmitted via a second transmission channel.

Abstract: A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order thus to ensure a similar operating point of the individual inner cells in the well. Therefore, the disadvantages brought about by a voltage drop in the buried layer are ultimately overcome.