Patents by Inventor Hannes Winkler

Hannes Winkler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chip with a Silicon Carbide Substrate
    Publication number: 20230420257
    Abstract: A chip is provided. In an embodiment, the chip includes a silicon carbide substrate, a first sputtered metal layer on the silicon carbide substrate, and at least one second sputtered metal layer on the first sputtered metal layer. The first sputtered metal layer and the at least one second sputtered metal layer form an electrical contact. In another embodiment, the chip includes a silicon carbide substrate, a nickel-silicon layer on the silicon carbide substrate, and a layer sequence including a titanium layer, a nickel-containing layer, and a gold-tin or silver layer on the nickel-silicon layer.
    Type: Application
    Filed: August 31, 2023
    Publication date: December 28, 2023
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Process for producing an electrical contact on a silicon carbide substrate
    Patent number: 11798807
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: October 24, 2023
    Assignee: Infineon Technologies AG
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Process for Producing an Electrical Contact on a Silicon Carbide Substrate
    Publication number: 20210265168
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Electrical contact connection on silicon carbide substrate
    Patent number: 11043383
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: June 22, 2021
    Assignee: Infineon Technologies AG
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Electrical Contact Connection on Silicon Carbide Substrate
    Publication number: 20190362973
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Application
    Filed: May 24, 2019
    Publication date: November 28, 2019
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert