Patents by Inventor Hannu Kattelus

Hannu Kattelus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130147021
    Abstract: A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semiconductor substrate structure (310, 312). A related multi-layer substrate structure is presented.
    Type: Application
    Filed: June 21, 2011
    Publication date: June 13, 2013
    Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT
    Inventors: Riikka Puurunen, Kimmo Henttinen, Hannu Kattelus, Tommi Suni
  • Patent number: 8236694
    Abstract: The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: August 7, 2012
    Assignee: Valtion Teknillinen Tutkimuskeskus
    Inventors: Jyrki Kiihamäki, Hannu Kattelus
  • Publication number: 20110279824
    Abstract: Electrically tunable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing interferometers with prior art processes includes costly and complicated production phases. Therefore, it has not been possible to apply interferometers in consumer mass products. According to the present solution, the Fabry-Perot cavity is made by removing a sacrificial layer (112) which has been polymer material. A mirror layer (113, 117-120) which is produced above the sacrificial layer can be made with atomic layer deposition technology, for example. According to a preferable embodiment, electrodes (106b, 115b) of the mirror structures are formed by using sputtering or evaporation. With the present solution it is possible to avoid the above mentioned problems related with prior art.
    Type: Application
    Filed: January 27, 2010
    Publication date: November 17, 2011
    Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT
    Inventors: Martti Blomberg, Hannu Kattelus, Riikka Puurunen
  • Publication number: 20110070675
    Abstract: The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 24, 2011
    Inventors: Jyrki KIIHAMAKI, Hannu KATTELUS
  • Patent number: 7882741
    Abstract: The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: February 8, 2011
    Assignee: Valtion Teknillinen Tutkimuskeskus
    Inventors: Jyrki Kiihamäki, Hannu Kattelus
  • Publication number: 20090206423
    Abstract: The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.
    Type: Application
    Filed: June 2, 2006
    Publication date: August 20, 2009
    Applicant: Valtion Teknillinen Tutkimuskeskus
    Inventors: Jyrki Kiihamaki, Hannu Kattelus
  • Patent number: 5644676
    Abstract: An electrically modulatable radiant source includes an essentially planar substrate, a well or hole formed in the substrate, and at least one incandescent filament attached to the substrate. The incandescent filament is aligned with the well or hole and is formed of a metallic compound which readily oxidizes at an operating temperature of the incandescent filament. An oxidation resistant film encapsulates the incandescent filament to prevent the filament from oxidizing. Furthermore, contact pads are formed on the substrate at both ends of the incandescent filament for feeding electric current to the incandescent filament.
    Type: Grant
    Filed: June 23, 1995
    Date of Patent: July 1, 1997
    Assignees: Instrumentarium Oy, Vaisala Oy
    Inventors: Martti Blomberg, Markku Orpana, Ari Lehto, Hannu Kattelus