Abstract: A process for producing lithographic features in a substrate layer is is described, comprising the steps of lowering a stamp (15) carrying an reactant (14) onto a substrate (10), confining the subsequent reaction to the desired pattern, lifting said stamp and removing the debris of the reaction from the substrate. Preferably, the stamp carries the pattern to be etched or depressions corresponding to such a pattern. Using the described methods, patterns with submicron features can be generated. The method allows a general solution to parallel handling and transfer of materials in a variety of technical fields.

Abstract: A hybrid stamp structure for lithographic processing of features below 1 micron is described, comprising a deformable layer (14) for accommodating unevenness of the surface of a substrate, and a patterned layer on the deformable layer in which a lithographic pattern is engraved. The stamp structure is further enhanced by comprising a third layer (16), which acts as rigid support for the stamp, thus preventing an undesired deformation of the stamp under load.