Patents by Inventor Hans Broekman

Hans Broekman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 11538908
    Abstract: A semiconductor device (100, 100?, 100?) and a method for manufacturing a semiconductor device (100, 100?, 100?). The semiconductor device (100, 100?, 100?) includes a substrate (104, 106), a GaN layer (112), and an AlGaN layer (114). The GaN layer (112) is located between the substrate (104, 106) and the AlGaN layer (114). The device further includes at least one contact (130, 132, 134), comprising a central portion (150) and an edge portion (152), and a passivation layer (160) located at least between the edge portion (152) of the contact (130, 132, 134) and the AlGaN layer (114). The edge portion (152) is spaced apart from an upper surface of the passivation layer (160). The edge portion (152) may be spaced apart from the passivation layer (160) by a further layer (170) or by an air gap (172).
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: December 27, 2022
    Assignee: Nexperia B.V.
    Inventors: Johannes Josephus Theodorus Marinus Donkers, Hans Broekman
  • Semiconductor device and manufacturing method
    Patent number: 9331155
    Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: May 3, 2016
    Assignee: NXP B.V.
    Inventors: Johannes Donkers, Hans Broekman, Stephan Heil, Mark De Keijser, Cecilia van der Schaar
  • SEMICONDUCTOR DEVICE
    Publication number: 20150295051
    Abstract: A semiconductor device (100, 100?, 100?) and a method for manufacturing a semiconductor device (100, 100?, 100?). The semiconductor device (100, 100?, 100?) includes a substrate (104, 106), a GaN layer (112), and an AlGaN layer (114). The GaN layer (112) is located between the substrate (104, 106) and the AlGaN layer (114). The device further includes at least one contact (130, 132, 134), comprising a central portion (150) and an edge portion (152), and a passivation layer (160) located at least between the edge portion (152) of the contact (130, 132, 134) and the AlGaN layer (114). The edge portion (152) is spaced apart from an upper surface of the passivation layer (160). The edge portion (152) may be spaced apart from the passivation layer (160) by a further layer (170) or by an air gap (172).
    Type: Application
    Filed: March 25, 2015
    Publication date: October 15, 2015
    Inventors: Johannes Josephus Theodorus Marinus Donkers, Hans Broekman
  • Group 13 nitride semiconductor device and method of its manufacture
    Patent number: 9147732
    Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: September 29, 2015
    Assignee: NXP B.V.
    Inventors: Johannes Theodorus Marinus Donkers, Stephan Heil, Romain Delhougne, Hans Broekman
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
    Publication number: 20140306232
    Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.
    Type: Application
    Filed: April 9, 2014
    Publication date: October 16, 2014
    Applicant: NXP B.V.
    Inventors: Johannes DONKERS, Hans Broekman, Stephan HEIL, Mark DE KEIJSER, Cecilia van der Schaar
  • GROUP 13 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURE
    Publication number: 20130299846
    Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.
    Type: Application
    Filed: May 3, 2013
    Publication date: November 14, 2013
    Applicant: NXP B.V
    Inventors: Johannes Theodorus Marinus Donkers, Stephan Heil, Romain Delhougne, Hans Broekman